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arXiv · 2001.04845

Local removal of silicon layers on Si(100)-2x1 with chlorine-resist STM lithography

T. V. Pavlova·V. M. Shevlyuga·B. V. Andryushechkin·G. M. Zhidomirov·K. N. Eltsov
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Abstract

We report the realization of STM-based lithography with silicon layers removal on the chlorinated Si(100)-2x1 surface at 77 K. In contrast to other STM lithography studies, we were able to remove locally both chlorine and silicon atoms. Most of the etched pits have a lateral size of 10-20 A and a depth of 1-5 A. In the pits in which the STM image with atomic resolution is obtained, the bottom is mainly covered with chlorine. Some pits contain chlorine vacancies. Mechanisms of STM-induced removal of silicon and chlorine atoms on Si(100)-2x1-Cl are discussed and compared with the well-studied case of STM-induced hydrogen desorption on Si(100)-2x1-H. The results open up new possibilities of the three-dimensional local etching with STM lithography.

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T. V. Pavlova, V. M. Shevlyuga, B. V. Andryushechkin, G. M. Zhidomirov, K. N. Eltsov. 2020-01-14. Local removal of silicon layers on Si(100)-2x1 with chlorine-resist STM lithography. https://doi.org/10.1016/j.apsusc.2019.145235

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