Experimental Extraction and Simulation of Charge Trapping during Endurance of FeFET with TiN/HfZrO/SiO2/Si (MFIS) Gate Structure

Shujing Zhao; Fengbin Tian; Hao Xu; Jinjuan Xiang; Tingting Li; Junshuai Chai; Jiahui Duan; Kai Han; Xiaolei Wang; Wenwu Wang; Tianchun Ye

doi:10.1109/ted.2021.3139285

arXiv · 2106.15939

Experimental Extraction and Simulation of Charge Trapping during Endurance of FeFET with TiN/HfZrO/SiO2/Si (MFIS) Gate Structure

Shujing Zhao·Fengbin Tian·Hao Xu·Jinjuan Xiang·Tingting Li·Junshuai Chai·Jiahui Duan·Kai Han·Xiaolei Wang·Wenwu Wang·Tianchun Ye

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Abstract

We investigate the charge trapping during endurance fatigue of FeFET with TiN/Hf0.5Zr0.5O2/SiO2/Si (MFIS) gate structure. We propose a method of experimentally extracting the number of trapped charges during the memory operation, by measuring the charges in the metal gate and Si substrate. We verify that the amount of trapped charges increases during the endurance fatigue process. This is the first time that the trapped charges are directly experimentally extracted and verified to increase during endurance fatigue. Moreover, we model the interplay between the trapped charges and ferroelectric polarization switching during endurance fatigue. Through the consistency of experimental results and simulated data, we demonstrate that as the memory window decreases: 1) The ferroelectric characteristic of Hf0.5Zr0.5O2 is not degraded. 2) The trap density in the upper bandgap of the gate stacks increases. 3) The reason for memory window decrease is increased trapped electrons after program operation but not related to hole trapping/de-trapping. Our work is helpful to study the charge trapping behavior of FeFET and the related endurance fatigue process.

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Shujing Zhao, Fengbin Tian, Hao Xu, Jinjuan Xiang, Tingting Li, Junshuai Chai, Jiahui Duan, Kai Han, Xiaolei Wang, Wenwu Wang, Tianchun Ye. 2021-06-30. Experimental Extraction and Simulation of Charge Trapping during Endurance of FeFET with TiN/HfZrO/SiO2/Si (MFIS) Gate Structure. https://doi.org/10.1109/ted.2021.3139285

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