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arXiv · 2111.00483

Radiation hardness study using SiPMs with single-cell readout

E. Garutti·E. Popova·P. Parygin·O. Bychkova·A. Kaminsky·S. Martens·J. Schwandt·A. Stifutkin
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Abstract

A dedicated single-cell SiPM structure is designed and measured to investigate the radiation damage effects on the gain and turn-off voltage of SiPMs exposed to a reactor neutron fluence up to $\Phi$ = 5e13 cm$^{-2}$. The cell has a pitch of 15 $\mu$m. The fluence dependence of gain and turn-off voltage are reported. A reduction of the gain by 19% and an increase of $V_{off}$ by $\approx$0.5 V is observed after $\Phi$ = 5e13 cm$^{-2}$.

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E. Garutti, E. Popova, P. Parygin, O. Bychkova, A. Kaminsky, S. Martens, J. Schwandt, A. Stifutkin. 2021-10-31. Radiation hardness study using SiPMs with single-cell readout. https://arxiv.org/abs/2111.00483

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