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arXiv · 2204.06880

Maximizing intrinsic anomalous Hall effect by controlling the Fermi level in simple Weyl semimetal films

Mizuki Ohno·Susumu Minami·Yusuke Nakazawa·Shin Sato·Markus Kriener·Ryotaro Arita·Masashi Kawasaki·Masaki Uchida
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Abstract

Large intrinsic anomalous Hall effect (AHE) originating in the Berry curvature has attracted growing attention for potential applications. Recently proposed magnetic Weyl semimetal EuCd$_2$Sb$_{\mathrm{2}}$ provides an excellent platform for controlling the intrinsic AHE because it only hosts a Weyl-points related band structure near the Fermi energy. Here we report the fabrication of EuCd$_2$Sb$_{\mathrm{2}}$ single-crystalline films and control of their anomalous Hall effect by film technique. As also analyzed by first-principles calculations of energy-dependent intrinsic anomalous Hall conductivity, the obtained anomalous Hall effect shows a sharp peak as a function of carrier density, demonstrating clear energy dependence of the intrinsic AHE.

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Mizuki Ohno, Susumu Minami, Yusuke Nakazawa, Shin Sato, Markus Kriener, Ryotaro Arita, Masashi Kawasaki, Masaki Uchida. 2022-04-14. Maximizing intrinsic anomalous Hall effect by controlling the Fermi level in simple Weyl semimetal films. https://doi.org/10.1103/physrevb.105.l201101

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