arXiv · 2207.06629
K-doped Ba122 epitaxial thin film on MgO substrate by buffer engineering
Abstract
Molecular beam epitaxy of K-doped Ba122 (Ba$_{1-x}$K$_x$Fe$_\text{2}$As$_\text{2}$) superconductor was realized on a MgO substrate. Microstructural observation revealed that the undoped Ba122 served as a perfect buffer layer for epitaxial growth of the K-doped Ba122. The film exhibited a high critical temperature of 39.8 K and a high critical current density of 3.9 MA/cm$^\text{2}$ at 4 K. The successful growth of epitaxial thin film will enable artificial single grain boundary on oxide bicrystal substrates and reveal the grain boundary transport nature of K-doped Ba122.
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Dongyi Qin, Kazumasa Iida, Zimeng Guo, Chao Wang, Hikaru Saito, Satoshi Hata, Michio Naito, Akiyasu Yamamoto. 2022-07-14. K-doped Ba122 epitaxial thin film on MgO substrate by buffer engineering. https://doi.org/10.1088/1361-6668%2Fac8025
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