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arXiv · 2210.09508

Wafer-level substrate-free low-stress silicon nitride platform for THz metadevices and monolithically integrated narrowband metamaterial absorbers

Zhigang Li·Jiarui Jia·Wenjing Jiang·Wen Ou·Bo Wang·Xubiao Peng·Qing Zhao
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Abstract

The implementation of terahertz (THz) wafer-level metadevices is critical to advance the science for applications including (I) integrated focal plane array which can image for biology and (II) integrated narrowband absorbers for high spectral resolution THz spectroscopy. Substantial progress has been made in the development of THz metamaterials; however, a wafer-level low-stress THz metadevices platform remains a challenge. This paper experimentally demonstrates a substrate-free THz metadevices platform adopting engineered Si-rich and low-stress silicon nitride (SiNx) thin films, achieving an extensive THz transparency up to f = 2.5 THz. A new analytical model is first reported from the Lorentz model that can accurately predict spectral responses of metal insulator metal (MIM) metamaterial absorbers. The model is experimentally validated in the THz range and exploited for the first demonstration of a THz absorber, which exhibits performance approaching the predicted results. Our results show that the wafer-level SiNx platform will accelerate the development of large-scale, sophisticated substrate-free THz metadevices. The Lorentz model and its quadratic model will be a very practical method for designing THz metadevices.

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Zhigang Li, Jiarui Jia, Wenjing Jiang, Wen Ou, Bo Wang, Xubiao Peng, Qing Zhao. 2022-10-18. Wafer-level substrate-free low-stress silicon nitride platform for THz metadevices and monolithically integrated narrowband metamaterial absorbers. https://arxiv.org/abs/2210.09508

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