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arXiv · 2402.04126

Balanced Quantum Hall Resistor

Kajetan M. Fijalkowski·Nan Liu·Martin Klement·Steffen Schreyeck·Karl Brunner·Charles Gould·Laurens W. Molenkamp
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Abstract

The quantum anomalous Hall effect in magnetic topological insulators has been recognized as a promising platform for applications in quantum metrology. The primary reason for this is the electronic conductance quantization at zero external magnetic field, which allows to combine it with the quantum standard of voltage. Here we demonstrate a measurement scheme that increases the robustness of the zero magnetic field quantum anomalous Hall resistor, allowing for higher operational currents. This is achieved by simultaneous current injection into the two disconnected perimeters of a multi-terminal Corbino device to balance the electrochemical potential between the edges, screening the electric field that drives back-scattering through the bulk, and thus improving the stability of the quantization at increased currents. This approach is not only applicable to devices based on the quantum anomalous Hall effect, but more generally can also be applied to existing quantum resistance standards that rely on the integer quantum Hall effect.

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Kajetan M. Fijalkowski, Nan Liu, Martin Klement, Steffen Schreyeck, Karl Brunner, Charles Gould, Laurens W. Molenkamp. 2024-02-06. Balanced Quantum Hall Resistor. https://doi.org/10.1038/s41928-024-01156-6

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