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arXiv · 2408.12744

Characterization of 4H-SiC Low Gain Avalanche Detectors (LGADs)

Tao Yang·Ben Sekely·Yashas Satapathy·Greg Allion·Philip Barletta·Carl Haber·Steve Holland·John F. Muth·Spyridon Pavlidis·Stefania Stucci
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Abstract

4H-SiC low gain avalanche detectors (LGADs) have been fabricated and characterized. The devices employ a circular mesa design with low-resistivity contacts and an SiO$_2$ passivation layer. The I-V and C-V characteristics of the 4H-SiC LGADs are compared with complementary 4H-SiC PiN diodes to confirm a high breakdown voltage and low leakage current. Both LGADs and PiN diodes were irradiated with $\alpha$ particles from a $^{210}_{84}\rm{Po}$ source. The charge collected by each device was compared, and it was observed that low-gain charge carrier multiplication is achieved in the 4H-SiC LGAD.

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Tao Yang, Ben Sekely, Yashas Satapathy, Greg Allion, Philip Barletta, Carl Haber, Steve Holland, John F. Muth, Spyridon Pavlidis, Stefania Stucci. 2024-08-22. Characterization of 4H-SiC Low Gain Avalanche Detectors (LGADs). https://doi.org/10.1016/j.nima.2025.170873

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