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arXiv · 2411.10566

Heterostructure and Interfacial Engineering for Low-Resistance Contacts to Ultra-Wide Bandgap AlGaN

Yinxuan Zhu·Andrew A. Allerman·Chandan Joishi·Jonathan Pratt·Agnes Maneesha Dominic Merwin Xavier·Gabriel Calderon Ortiz·Brianna A. Klein·Andrew Armstrong·Jinwoo Hwang·Siddharth Rajan
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Abstract

We report on the heterostructure and interfacial engineering of metalorganic chemical vapor deposition (MOCVD) grown reverse-graded contacts to ultra-wide bandgap AlGaN. A record low contact resistivity of 1.4 x 10-6 Ohm.cm2 was reported on an Al0.82Ga0.18N metal semiconductor field effect transistor (MESFET) by compositionally grading the contact layer from Al0.85Ga0.15N to Al0.14Ga0.86N with degenerate doping and proper interfacial engineering considering bandgap-narrowing-induced band offset between channel and contact layer. This represents orders-of-magnitude of lower contact resistivity than that obtained in similar MOCVD-grown structures. A detailed, layer-by-layer analysis of the reverse graded contact and TCAD simulation of the bandgap narrowing effect highlighted that the reverse graded contact layer itself is extremely conductive and interfacial resistance due to bandgap-narrowing-induced barrier between contact and channel dominates the contact resistance.

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Yinxuan Zhu, Andrew A. Allerman, Chandan Joishi, Jonathan Pratt, Agnes Maneesha Dominic Merwin Xavier, Gabriel Calderon Ortiz, Brianna A. Klein, Andrew Armstrong, Jinwoo Hwang, Siddharth Rajan. 2024-11-15. Heterostructure and Interfacial Engineering for Low-Resistance Contacts to Ultra-Wide Bandgap AlGaN. https://arxiv.org/abs/2411.10566

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