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Dongke Rong

Publications and source records attributed to Dongke Rong.

18 recordsLinked to original sources

Beyond Static Evaluation: Co-Evolutionary Mechanisms for LLM-Driven Strategy Evolution in Adversarial Games

Recent advances in LLM-driven code evolution have enabled automated discovery by iteratively generating and improving programs. However, applying these methods to adversarial multi-agent games introduces a fundamental challenge: the evaluation landscape shifts as strategies improve, causing fixed evaluators to become unreliable and evolution to stagnate. We propose three mechanisms to address this challenge: evaluator co-evolution, which incorporates discovered champions into the opponent pool; hierarchical deep evaluation, which replaces noisy few-game scores with statistically reliable assessments; and weakness pressure, which dynamically up-weights the most difficult opponents to break through plateaus. We implement these mechanisms within FAMOU, a framework built upon the same foundation-model code-evolution paradigm as OpenEvolve and ShinkaEvolve. On the MCTF 2026 3v3 maritime capture-the-flag task, FAMOU consistently outperforms both baselines under two backbone LLMs, achieving the highest combined score (0.526) and the best generalization to unseen opponents (61.7% win rate), while ablations confirm that each mechanism contributes to performance. Notably, the LLM mutation process generates tactical structures entirely absent from the seed strategies -- including lookahead search and adaptive interception -- demonstrating that code-level evolution can produce nontrivial algorithmic innovations in adversarial settings. The FAMOU-evolved strategy further achieved 1st place in the hardware round-robin and 3rd in simulation at the AAMAS 2026 MCTF Competition, validating its real-world transferability. The optimized implementation and corresponding evaluation codes developed through our evolutionary process are available at: https://github.com/1xiangliu1/FAMOU-CoEvo

cs.AI

Observation of square-like moire lattice and quasicrystalline order in twisted rock-salt nitrides

Twistronics, which exploits moire modulation of lattice and electronic structures in twisted bilayers, has emerged as a powerful approach to engineer novel quantum states. Recent efforts have expanded beyond two dimensional van der Waals (vdWs) crystals to more complex, strongly correlated materials, where interfacial moire effects can dominate physical properties. Here we demonstrate a generalizable route to fabricate twisted bilayers of transition metal nitrides with vdWs like interfaces, using freestanding CrN membranes as a model system. Twisted bilayer CrN (tCrN) is realized by employing cubic alkaline earth metal monoxides as sacrificial layers, enabling the assembly of clean, controllable interfaces. Electron ptychography reveals well defined, periodic square moire superlattices in tCrN. For a twist angle of 16.3 degree, we identify a nearly commensurate moire lattice with coincident Cr columns, whereas at 45 degree we uncover localized octagonal quasicrystalline order with clear self-similarity. These results establish a practical platform for twisted TMNs and open avenues to explore moire-induced atomic configurations and emergent correlated phenomena in nitride based heterostructures.

cond-mat.mtrl-sci

Unusual strain relaxation and Dirac semimetallic behavior in epitaxial antiperovskite nitrides

Antiperovskite nitrides (X3AN) are the structural analogues to perovskite oxides, while their epitaxial growth and electronic properties remain largely unexplored. We report the successful synthesis of Ni3InN thin films on substrates with different lattice constants. First-principles phonon calculations confirm the dynamical stability of cubic phase Ni3InN, providing the basis for epitaxial synthesis. High-resolution scanning transmission electron microscopy reveals coherent (001)-oriented interfaces when Ni3InN is grown on LaAlO3 and SrTiO3, while an unexpected (011)-orientation forms on DyScO3, aligning with surface-energy predictions. Transport measurements highlight a strain-controlled Fermi-liquid behavior, correlated with variations in the Ni-3d bandwidth and hybridization. Band structure calculations reveal a dual character near the Fermi level: a high-mobility Dirac-like band and a Ni-3d manifold that drives strange-metal transport with a reduced slope compared to oxide perovskites. The formal Ni valence (+2/3) places Ni3InN in an overdoped correlated-metal regime, distinguishing from most perovskite oxides. This positions antiperovskite nitrides as a promising platform for investigating overdoped Fermi liquids and strange-metal behavior.

cond-mat.mtrl-sci

Advancing Antiferromagnetic Nitrides via Metal Alloy Nitridation

Nitride materials, valued for their structural stability and exceptional physical properties, have garnered significant interest in both fundamental research and technological applications. The fabrication of high-quality nitride thin films is essential for advancing their use in microelectronics and spintronics. Yet, achieving single-crystal nitride thin films with excellent structural integrity remains a challenge. Here, we introduce a straightforward yet innovative metallic alloy nitridation technique for the synthesis of stable single-crystal nitride thin films. By subjecting metal alloy thin films to a controlled nitridation process, nitrogen atoms integrate into the lattice, driving structural transformations while preserving high epitaxial quality. Combining nanoscale magnetic imaging with a diamond nitrogen-vacancy (NV) probe, X-ray magnetic linear dichroism, and comprehensive transport measurements, we confirm that the nitridated films exhibit a robust antiferromagnetic character with a zero net magnetic moment. This work not only provides a refined and reproducible strategy for the fabrication of nitride thin films but also lays a robust foundation for exploring their burgeoning device applications.

cond-mat.mtrl-sci

A single-phase epitaxially grown ferroelectric perovskite nitride

The integration of ferroelectrics with semiconductors is crucial for developing functional devices, such as field-effect transistors, tunnel junctions, and nonvolatile memories. However, the synthesis of high-quality single-crystalline ferroelectric nitride perovskites has been limited, hindering a comprehensive understanding of their switching dynamics and potential applications. Here we report the synthesis and characterizations of epitaxial single-phase ferroelectric cerium tantalum nitride (CeTaN3) on both oxides and semiconductors. The polar symmetry of CeTaN3 was confirmed by observing the atomic displacement of central ions relative to the center of the TaN6 octahedra, as well as through optical second harmonic generation. We observed switchable ferroelectric domains in CeTaN3 films using piezo-response force microscopy, complemented by the characterization of square-like polarization-electric field hysteresis loops. The remanent polarization of CeTaN3 reaches approximately 20 uC/cm2 at room temperature, consistent with theoretical calculations. This work establishes a vital link between ferroelectric nitride perovskites and their practical applications, paving the way for next-generation information and energy-storage devices with enhanced performance, scalability, and manufacturability.

cond-mat.mtrl-sci

Designing Optimal Distorted-Octahedra Superlattices for Strong Topological Hall Effect

Topologically protected spin states hold great promise for applications in next generation of memory circuits and spintronic devices. These intriguing textures typically emerge in bulk materials or heterostructures with broken inversion symmetry, accompanied by an enhanced Dzyaloshinskii-Moriya interaction (DMI). In this study, we successfully induced the topological Hall effect (THE) in atomically designed (DyScO3)n/(SrRuO3)n (DnSn) superlattices over a significant range of temperatures (10~120K) and thicknesses (16~40nm). Using magnetic force microscopy (MFM), we observed the formation and stability of magnetic domains, such as topological skyrmions. By precisely controlling the interlayer thickness (n) and biaxial strain, we elucidated the mechanisms underlying the modulation and induction of magnetic topological states. Supporting evidence was provided by scanning transmission electron microscopy (STEM) and X-ray absorption spectroscopy (XAS), thereby lending further credence to our conclusions. These heterostructures offer a universal method for exploring topological phenomena driven by distorted octahedra, while enhancing the integrability and addressability of topologically protected functional devices.

cond-mat.mtrl-sci

Deteriorated Interlayer Coupling in Twisted Bilayer Cobaltites

A wealth of remarkable behaviors is observed at the interfaces between magnetic oxides due to the coexistence of Coulomb repulsion and interatomic exchange interactions. While previous research has focused on bonded oxide heterointerfaces, studies on magnetism in van der Waals interfaces remain rare. In this study, we stacked two freestanding cobaltites with precisely controlled twist angles. Scanning transmission electron microscopy revealed clear and ordered moiré patterns, which exhibit an inverse relationship with the twist angle. We found that the Curie temperature in the twisted region is reduced by approximately 13 K compared to the single-layer region using nitrogen-vacancy (NV) magnetometry. This phenomenon may be related to the weakening of the orbital hybridization between oxygen ions and transition metal ions in the unbonded interfaces. Our findings suggest a potential avenue for modulating magnetic interactions in correlated systems through twist, providing opportunities for the discovery of unknown quantum states.

cond-mat.mtrl-sci

Charge transfer induced insulating state at antiperovskite/perovskite heterointerfaces

Heterointerfaces have been pivotal in unveiling extraordinary interfacial properties and enabling multifunctional material platforms. Despite extensive research on all-oxide interfaces, heterointerfaces between different material classes, such as oxides and nitrides, remain underexplored. Here we present the fabrication of a high-quality Dirac metal antiperovskite Ni3InN, characterized by an extremely low temperature coefficient of resistivity, approximately 1.8*10^-8 Ω*cm/K, over a broad temperature range. Atomically sharp heterointerfaces between Ni3InN and SrVO3 were constructed, revealing intriguing interfacial phenomena. Leveraging layer-resolved scanning transmission electron microscopy and electron energy loss spectroscopy, we identified pronounced charge transfer across the well-ordered interface. Remarkably, this interfacial electron transfer from Ni3InN to SrVO3 induces an insulating interfacial layer and an emergent magnetic moment within the Ni3InN layer, consistent with first-principles calculations. These findings pave the way for novel electronic and spintronic applications by enabling tunable interfacial properties in nitride/oxide systems.

cond-mat.mtrl-sci

Confined Magnetization at the Sublattice-Matched Ruthenium Oxide Heterointerface

Creating a heterostructure by combining two magnetically and structurally distinct ruthenium oxides is a crucial approach for investigating their emergent magnetic states and interactions. Previously, research has predominantly concentrated on the intrinsic properties of the ferromagnet SrRuO3 and recently discovered altermagnet RuO2 solely. Here, we engineered an ultrasharp sublattice-matched heterointerface using pseudo-cubic SrRuO3 and rutile RuO2, conducting an in-depth analysis of their spin interactions. Structurally, to accommodate the lattice symmetry mismatch, the inverted RuO2 layer undergoes an in-plane rotation of 18 degrees during epitaxial growth on SrRuO3 layer, resulting in an interesting and rotational interface with perfect crystallinity and negligible chemical intermixing. Performance-wise, the interfacial layer of 6 nm in RuO2 adjacent to SrRuO3 exhibits a nonzero magnetic moment, contributing to an enhanced anomalous Hall effect (AHE) at low temperatures. Furthermore, our observations indicate that, in contrast to SrRuO3 single layers, the AHE of [(RuO2)15/(SrRuO3)n] heterostructures shows nonlinear behavior and reaches its maximum when the SrRuO3 thickness reaches tens of nm. These results suggest that the interfacial magnetic interaction surpasses that of all-perovskite oxides (~5-unit cells). This study underscores the significance and potential applications of magnetic interactions based on the crystallographic asymmetric interfaces in the design of spintronic devices.

cond-mat.mtrl-sci

Metal-to-insulator transition in oxide semimetals by anion doping

Oxide semimetals exhibiting both nontrivial topological characteristics stand as exemplary parent compounds and multiple degrees of freedom, offering great promise for the realization of novel electronic states. In this study, we present compelling evidence of profound structural and transport phase shifts in a recently uncovered oxide semimetal, SrNbO3, achieved through effective in-situ anion doping. Notably, a remarkable increase in resistivity of more than three orders of magnitude at room temperature is observed upon nitrogen-doping. The extent of electronic modulation in SrNbO3 is strongly correlated with the misfit strain, underscoring its phase instability to both chemical doping and crystallographic symmetry variations. Using first-principles calculations, we discern that elevating the level of nitrogen doping induces an upward shift in the conductive bands of SrNbO3-dNd. Consequently, a transition from a metallic state to an insulating state becomes apparent as the nitrogen concentration reaches a threshold of 1/3. This investigation sheds light on the potential of anion engineering in oxide semimetals, offering pathways for manipulating their physical properties. These insights hold promise for future applications that harness these materials for tailored functionalities.

cond-mat.mtrl-sci

Strain mediated phase crossover in Ruddlesden Popper nickelates

Recent progress on the signatures of pressure-induced high temperature superconductivity in Ruddlesden Popper (RP) nickelates (Lan+1NinO3n+1) has attracted growing interest in both theoretical calculations and experimental efforts. The fabrication of high-quality single crystalline RP nickelate thin films is critical for possible reducing the superconducting transition pressure and advancing applications in microelectronics in the future. In this study, we report the observations of an active phase transition in RP nickelate films induced by misfit strain. We found that RP nickelate films favor the perovskite structure (n = infinite) under tensile strains, while compressive strains stabilize the La3Ni2O7 (n = 2) phase. The selection of distinct phases is governed by the strain dependent formation energy and electronic configuration. In compressively strained La3Ni2O7, we experimentally determined splitting energy is ~0.2 eV and electrons prefer to occupy in-plane orbitals. First principles calculations unveil a robust coupling between strain effects and the valence state of Ni ions in RP nickelates, suggesting a dual driving force for the inevitable phase co-existence transition in RP nickelates. Our work underscores the sensitivity of RP nickelate formation to epitaxial strain, presenting a significant challenge in fabricating pure-phase RP nickelate films. Therefore, special attention to stacking defects and grain boundaries between different RP phases is essential when discussing the pressure-induced superconductivity in RP nickelates.

cond-mat.supr-con

Syntropic spin alignment at the interface between ferromagnetic and superconducting nitrides

The magnetic correlations at the superconductor/ferromagnet (S/F) interfaces play a crucial role in realizing dissipation-less spin-based logic and memory technologies, such as triplet-supercurrent spin-valves and "π" Josephson junctions. Here we report the coexistence of an induced large magnetic moment and a crypto ferromagnetic state at high-quality nitride S/F interfaces. Using polarized neutron reflectometry and d. c. SQUID measurements, we quantitatively determined the magnetization profile of S/F bilayer and confirmed the induced magnetic moment in the adjacent superconductor only exists below TC. Interestingly, the direction of the induced moment in the superconductors was unexpectedly parallel to that in the ferromagnet, which contrasts with earlier findings in S/F heterostructures based on metals or oxides. The first-principles calculations verify the observed unusual interfacial spin texture is caused by the Heisenberg direct exchange coupling through d orbital overlapping and severe charge transfer across the interfaces. Our work establishes an incisive experimental probe for understanding the magnetic proximity behavior at S/F interfaces and provides a prototype epitaxial building block for superconducting spintronics.

cond-mat.supr-con

Miniature Magnetic Nano islands in a Morphotropic Cobaltite Matrix

High-density magnetic memories are key components in spintronics, quantum computing, and energy-efficient electronics. Reduced dimensionality and magnetic domain stability at the nanoscale are essential for the miniaturization of magnetic storage units. Yet, inducing magnetic order, and selectively tuning spin-orbital coupling at specific locations have remained challenging. Here we demonstrate the construction of switchable magnetic nano-islands in a nonmagnetic matrix based on cobaltite homo-structures. The magnetic and electronic states are laterally modified by epitaxial strain, which is regionally controlled by freestanding membranes. Atomically sharp grain boundaries isolate the crosstalk between magnetically distinct regions. The minimal size of magnetic nano-islands reaches 35 nm in diameter, enabling an areal density of 400 Gbit per inch square. Besides providing an ideal platform for precisely controlled read and write schemes, this methodology can enable scalable and patterned memories on silicon and flexible substrates for various applications.

cond-mat.mtrl-sci

Synthesis of functional nitride membranes using sacrificial water-soluble BaO layers

Transition metal nitrides (TMNs) exhibit fascinating physical properties that hold great potential in future device applications. To stack two-dimensional TMNs with other functional materials that have dissimilar orientations and symmetries requires to separate epitaxial TMNs from the growth substrates. However, the lattice constants of TMNs are not compatible with those of most sacrificial layers, leading to a great challenge to fabricate high-quality single crystalline TMN membranes. In this letter, we report the application of a water-soluble BaO sacrificial layer as a general approach to create freestanding TMN membranes. Taken CrN as an example, the relatively small lattice mismatch and identical cubic structure between BaO and CrN ensure the growth of heterostructures. Millimeter-size CrN membrane allows us to directly observe the planar-view of atomic structure and to correlate its electronic state with intrinsic transport properties. Our work provides the opportunity to fabricate freestanding TMN membranes and the ability to transfer them to arbitrary substrates. The integration of TMN membranes with other materials will stimulate further studies in the emergent phenomena at heterointerfaces.

cond-mat.mtrl-sci

Braiding lateral morphotropic grain boundary in homogeneitic oxides

Interfaces formed by correlated oxides offer a critical avenue for discovering emergent phenomena and quantum states. However, the fabrication of oxide interfaces with variable crystallographic orientations and strain states integrated along a film plane is extremely challenge by conventional layer-by-layer stacking or self-assembling. Here, we report the creation of morphotropic grain boundaries (GBs) in laterally interconnected cobaltite homostructures. Single-crystalline substrates and suspended ultrathin freestanding membranes provide independent templates for coherent epitaxy and constraint on the growth orientation, resulting in seamless and atomically sharp GBs. Electronic states and magnetic behavior in hybrid structures are laterally modulated and isolated by GBs, enabling artificially engineered functionalities in the planar matrix. Our work offers a simple and scalable method for fabricating unprecedented innovative interfaces through controlled synthesis routes as well as provides a platform for exploring potential applications in neuromorphics, solid state batteries, and catalysis.

cond-mat.mtrl-sci

Asymmetric Ground States in La$_{0.67}$Sr$_{0.33}$MnO$_3$/BaTiO$_3$ heterostructures Induced by Flexoelectric Bending

Misfit strain delivered from single-crystal substrates typically modifies the ground states of transition metal oxides, generating increasing interests in designing modern transducers and sensors. Here, we demonstrate that magnetotransport properties of La$_{0.67}$Sr$_{0.33}$MnO$_3$ (LSMO) films were continuously tuned by uniaxial strain produced by a home-designed bending jig. The electrical conductivity and Curie temperature of LSMO films are enhanced by bending stresses. The resistivity of a u-shape bended LSMO decays three times faster than that of a n-shape bended LSMO as a response to the same magnitude of strain. The asymmetric magnetic states in uniaxially strained LSMO are attributed to the dual actions of Jahn-Teller distortion and strain gradient mediated flexoelectric fields in an adjacent ferroelectric layer. These findings of multi-field regulation in a single material provide a feasible means for developing flexible electronic and spintronic devices.

cond-mat.mtrl-sci

Exfoliation of 2D van der Waals crystals in ultrahigh vacuum for interface engineering

Two-dimensional (2D) materials and their heterostructures have been intensively studied in recent years due to their potential applications in electronic, optoelectronic, and spintronic devices. Nonetheless, the realization of 2D heterostructures with atomically flat and clean interfaces remains challenging, especially for air-sensitive materials, which hinders the in-depth investigation of interface-induced phenomena and the fabrication of high-quality devices. Here, we circumvented this challenge by exfoliating 2D materials in an ultrahigh vacuum. Remarkably, ultraflat and clean substrate surfaces can assist the exfoliation of 2D materials, regardless of the substrate and 2D material, thus providing a universal method for the preparation of heterostructures with ideal interfaces. In addition, we studied the properties of two prototypical systems that cannot be achieved previously, including the electronic structure of monolayer phospherene and optical responses of transition metal dichalcogenides on different metal substrates. Our work paves the way to engineer rich interface-induced phenomena, such as proximity effects and moiré superlattices.

cond-mat.mtrl-sci

Anisotropic electronic phase transition in CrN epitaxial thin films

Electronic phase transition in strongly correlated materials is extremely sensitive to the dimensionality and crystallographic orientations. Transition metal nitrides (TMNs) are seldom investigated due to the difficulty in fabricating the high-quality and stoichiometric single crystals. In this letter, we report the epitaxial growth and electronic properties of CrN films on different-oriented NdGaO3 (NGO) substrates. Astonishingly, the CrN films grown on (110)-oriented NGO substrates maintain a metallic phase, whereas the CrN films grown on (010)-oriented NGO substrates are semiconducting. We attribute the unconventional electronic transition in the CrN films to the strongly correlation with epitaxial strain. The effective modulation of bandgap by the anisotropic strain triggers the metal-to-insulator transition consequently. This work provides a convenient approach to modify the electronic ground states of functional materials using anisotropic strain and further stimulates the investigations of TMNs.

cond-mat.mtrl-sci