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arXiv · 2512.16040

Pulse-Mode Operation and Reliability of BEOL-Compatible Ferroelectric Non-Volatile Capacitive Memories with Amorphous Oxide Semiconductor Channels

Junmo Lee·Chengyang Zhang·Tae-Hyeon Kim·Suman Datta·Shimeng Yu
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Abstract

Non-volatile capacitive memories (nvCAPs) exhibiting AC small-signal capacitance on/off ratio (Con/Coff) with non-destructive read have emerged as a promising device for next-generation memory paradigms. Recently, BEOL-compatible ferroelectric nvCAPs with an amorphous oxide semiconductor channel have been reported, suggesting the possibility of monolithic 3D integration of nvCAPs on top of CMOS. So far, the characterization studies on oxide-channel ferroelectric nvCAPs have been done using dual DC sweep C-V measurements which are typically performed over a time scale of a few seconds. However, non-volatile memory arrays typically require nvCAPs to operate under pulse-mode. It is thus crucial to advance understanding of the behavior of oxide-channel ferroelectric nvCAPs under pulse-mode operation, governed by the unique interplay between ferroelectric layer and oxide channel physics. In this study, we provide a systematic study of the pulse-mode operation of ferroelectric nvCAPs with an amorphous oxide semiconductor channel, including its pulse-based write characteristics and reliability characteristics. We examine overlap area, wake-up and pulse-width dependent Con and Coff writing characteristics under pulse-mode. Further, we suggest the importance of optimizing ferroelectric depolarization for Con retention, while reducing read-after-delay for Coff retention under pulse-mode. Lastly, non-destructive read operation for >10^9 read stress cycles at |Vread|=1V is demonstrated.

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Junmo Lee, Chengyang Zhang, Tae-Hyeon Kim, Suman Datta, Shimeng Yu. 2025-12-17. Pulse-Mode Operation and Reliability of BEOL-Compatible Ferroelectric Non-Volatile Capacitive Memories with Amorphous Oxide Semiconductor Channels. https://arxiv.org/abs/2512.16040

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