Single event effects in the HCCStar ASICs for ITk strip upgrade

Shaogang Peng; Jeff Dandoy; Bruce Gallop; Hantao Jing; Jaya John John; Paul Keener; Pedro Leitao; Qiang Li; Weiguo Lu; Godwin Mayers; Mitch Newcomer; Peter Phillips; Zhixin Tan; Matt Warren; Yan Zhou

arXiv · 2607.21116

Single event effects in the HCCStar ASICs for ITk strip upgrade

Shaogang Peng·Jeff Dandoy·Bruce Gallop·Hantao Jing·Jaya John John·Paul Keener·Pedro Leitao·Qiang Li·Weiguo Lu·Godwin Mayers·Mitch Newcomer·Peter Phillips·Zhixin Tan·Matt Warren·Yan Zhou

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Abstract

Triple Modular Redundancy (TMR) technology has been implemented in the design of the HCCStar to reduce digital state changes and ensure reliable operation. We tested the effectiveness of the protection by placing HCCStar chips in a proton beam. We studied corrected bit flips in registers and actual single event effects in the LCB and LP paths under different proton energies. Our estimate is that the LP data-loss fraction relative to the 400 kHz readout is $O(10^{-10})$ during normal operation and there will be $O(10)$ corrected bit flips per HCCStar bit per year at the HL-LHC.

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Shaogang Peng, Jeff Dandoy, Bruce Gallop, Hantao Jing, Jaya John John, Paul Keener, Pedro Leitao, Qiang Li, Weiguo Lu, Godwin Mayers, Mitch Newcomer, Peter Phillips, Zhixin Tan, Matt Warren, Yan Zhou. 2026-07-23. Single event effects in the HCCStar ASICs for ITk strip upgrade. https://arxiv.org/abs/2607.21116

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