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Heating of Two-Dimensional Holes in SiGe and the B = 0 Metal-Insulator Transition

R. Leturcq·D. L'Hote·R. Tourbot·V. Senz·U. Gennser·T. Ihn·K. Ensslin·G. Dehlinger·D. Grützmacher
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Abstract

We study the resistivity vs. electric field dependence $ρ(E)$ of a 2D hole system in SiGe close to the B=0 metal-insulator transition. Using $ρ$ as a ``thermometer'' to obtain the effective temperature of the holes $T_e(E)$, we find that the $ρ(E)$ dependence can be attributed to hole heating. The hole-phonon coupling involves weakly screened piezoelectric and deformation potentials compatible with previous measurements. The damping of the Shubnikov-de Haas oscillations gives the same $T_e$ values. Thus the $ρ(E)$ dependence and the $E$-field ``scaling'' do not provide additional evidence for a quantum phase transition (QPT). We discuss how to study, in general, true $E$-field scaling and extract the ratio of the QPT characteristic lengths.

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R. Leturcq, D. L'Hote, R. Tourbot, V. Senz, U. Gennser, T. Ihn, K. Ensslin, G. Dehlinger, D. Grützmacher. 2001-07-23. Heating of Two-Dimensional Holes in SiGe and the B = 0 Metal-Insulator Transition. https://arxiv.org/abs/cond-mat/0107457

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