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Kinetics of electric field induced oxygen ion migration in epitaxial metallic oxide films

Arindam Ghosh·A. K. Raychaudhuri·R. Sreekala·M. Rajeswari·T. Venkatesan
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Abstract

In this paper we report the observation of curent induced change of resistance of thin metallic oxide films. The resistance changes at a very low current (current density $J \geq 10^{3}$ A/cm$^{2}$). We find that the time dependence associated with the processes (increase of resistance) show a streched exponential type dependence at lower temperature, which crosses over to a creep type behavior at $T \geq$ 350 K. The time scale associated shows a drastic drop in the magnitude at $T \approx$ 350 K, where a long range diffusion sets in increasing the conductivity noise. The phenomena is like a "glass-transition" in the random lattice of oxygen ions.

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Arindam Ghosh, A. K. Raychaudhuri, R. Sreekala, M. Rajeswari, T. Venkatesan. 1998-11-26. Kinetics of electric field induced oxygen ion migration in epitaxial metallic oxide films. https://arxiv.org/abs/cond-mat/9811377

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