Searcharxiv⌕ Search

arXiv subjects

B. Dieny

Publications and source records attributed to B. Dieny.

36 records · Page 2Linked to original sources

Spin Transfer Torques induced by Spin Hall Effect

Spin accumulation and spin transfer torques induced by Spin Hall Effect in bi-layer structures comprising ferromagnetic and paramagnetic materials are theoretically investigated. The charge and spin diffusion equations taking into account spin-flip and spin Hall effect are formulated and solved analytically and numerically for in structures with simplified and complex geometry, respectively. It is demonstrated that spin torques could be efficiently produced by means of Spin Hall effect which may be further enhanced by modifying structure geometry.

cond-mat.mes-hall↗

Spin-current vortices in current-perpendicular-to-plane nanoconstricted spin-valves

The charge and spin diffusion equations taking into account spin-flip and spin-transfer torque were numerically solved using a finite element method in complex non-collinear geometry with strongly inhomogeneous current flow. As an illustration, spin-dependent transport through a non-magnetic nanoconstriction separating two magnetic layers was investigated. Unexpected results such as vortices of spin-currents in the vicinity of the nanoconstriction were obtained. The angular variations of magnetoresistance and spin-transfer torque are strongly influenced by the structure geometry.

cond-mat.mes-hall↗

First-principles investigation of the very large Perpendicular Magnetic Anisotropy at Fe|MgO Interfaces

The perpendicular magnetic anisotropy (PMA) arising at the interface between ferromagnetic transition metals and metallic oxides are investigated via first-principles calculations. In this work very large values of PMA up to 3 erg/cm$^2$ at Fe$|$MgO interfaces are reported in agreement with recent experiments. The origin of PMA is attributed to overlap between O-$p_z$ and transition metal $d_{z^2}$ orbitals hybridized with $d_{xz(yz)}$ orbitals with stronger spin-orbit coupling induced splitting around the Fermi level for perpendicular magnetization orientation. Furthemore, it is shown that the PMA value weakens in case of over- or underoxidation when oxygen $p_z$ and transition metal $d_{z^2}$ orbitals overlap is strongly affected by disorder, in agreement with experimental observations in magnetic tunnel junctions.

cond-mat.mtrl-sci↗

Finite Element Modeling of Charge and Spin-currents in Magnetoresistive Pillars with Current Crowding Effects

The charge and spin diffusion equations taking into account spin-flip and spin-transfer torque were numerically solved using a finite element method in complex non-collinear geometry. This approach was used to study the spin-dependent transport in giant magnetoresistance metallic pillars sandwiched between extended electrodes as in magnetoresistive heads for hard disk drives. The charge current crowding around the boundaries between the electrodes and the pillar has a quite significant influence on the spin current.

cond-mat.mes-hall↗

The two-bands model of the magnetic tunnel junctions in the Fe/Cr/MgO/Fe structure

In this paper we present theoretical studies of spin dependent transport in Fe/Cr/MgO/Fe tunnel junctions with non-collinear alignment of magnetizations of metallic layers comprising these MTJs. Calculations are performed with use of non-equilibrium Green function technique in the framework of Keldysh formalism. WKB approximation is used for wave and Green functions in the trapezoidal barrier region under applied voltage. Electronic structure of ferromagnetic electrodes is modeled with two bands model, i.e. with majority s-electrons and minority d-holes. Furthermore, we introduce s-d hybridization by calculating the corresponding perturbation corrections for the wave and Green functions.

cond-mat.mes-hall↗

Quasi-Two-Dimensional Extraordinary Hall Effect

Quasi-two-dimensional transport is investigated in a system consisting of one ferromagnetic layer placed between two insulating layers. Using the mechanism of skew-scattering to describe the Extraordinary Hall Effect (EHE) and calculating the conductivity tensor, we compare the quasi- two-dimensional Hall resistance with the resistance of a massive sample. In this study a new mechanism of EHE (geometric mechanism of EHE) due to non-ideal interfaces and volume defects is also proposed.

cond-mat.mtrl-sci↗

Creep and flow regimes of magnetic domain wall motion in ultrathin Pt/Co/Pt films with perpendicular anisotropy

We report on magnetic domain wall velocity measurements in ultrathin Pt/Co(0.5-0.8 nm)/Pt films with perpendicular anisotropy over a large range of applied magnetic fields. The complete velocity-field characteristics are obtained, enabling an examination of the transition between thermally activated creep and viscous flow: motion regimes predicted from general theories for driven elastic interfaces in weakly disordered media. The dissipation limited flow regime is found to be consistent with precessional domain wall motion, analysis of which yields values for the damping parameter, $α$.

cond-mat.mtrl-sci↗

Spin Diode Based on Fe/MgO Double Tunnel Junction

We demonstrate a spin diode consisting of a semiconductor free nano-scale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonant tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The observed magneto-resistance is record high, ~4000%, essentially making the structure an on/off spin-switch. This, combined with the strong diode effect, ~100, offers a new device that should be promising for such technologies as magnetic random access memory and re-programmable logic.

cond-mat.mes-hall↗

Magnetic domain structure and dynamics in interacting ferromagnetic stacks with perpendicular anisotropy

The time and field dependence of the magnetic domain structure at magnetization reversal were investigated by Kerr microscopy in interacting ferromagnetic Co/Pt multilayers with perpendicular anisotropy. Large local inhomogeneous magnetostatic fields favor mirroring domain structures and domain decoration by rings of opposite magnetization. The long range nature of these magnetostatic interactions gives rise to ultra-slow dynamics even in zero applied field, i.e. it affects the long time domain stability. Due to this additionnal interaction field, the magnetization reversal under short magnetic field pulses differs markedly from the well-known slow dynamic behavior. Namely, in high field, the magnetization of the coupled harder layer has been observed to reverse more rapidly by domain wall motion than the softer layer alone.

cond-mat.mtrl-sci↗

Current induced magnetization switching in exchange biased spin-valves for CPP-GMR heads

In contrast to earlier studies performed on simple Co/Cu/Co sandwiches, we have investigated spin transfer effects in complex spin-valve pillars with a diameter of 130nm developed for current-perpendicular to the plane (CPP) magneto-resistive heads. The structure of the samples included an exchange biased synthetic pinned layer and a free layer both laminated by insertion of several ultrathin Cu layers. Despite the small thickness of the polarizing layer, our results show that the free layer can be switched between the parallel (P) and the antiparallel (AP) states by applying current densities of the order of 10^7 A/cm^2. A strong asymmetry is observed between the two critical currents IcAP-P and IcP-AP, as predicted by the model of Slonczewski model. Thanks to the use of exchange biased structures, the stability phase diagrams could be obtained in the four quadrants of the (H, I) plan. The critical lines derived from the magnetoresistance curves measured with different sense currents, and from the resistance versus current curves measured for different applied fields, match each other very well. The main features of the phase diagrams can be reproduced by investigating the stability of the solutions of the Landau Lifshitz Gilbert equation including spin torque term within a macrospin model. A spin-transfer saturation effect was observed in the positive currents range. We attribute it to a de-depolarization effect which appears as a consequence of the asymmetric heating of the pillars, whose top and the bottom leads are made of different materials.

cond-mat.other↗

Diode effect in magnetic tunnel junctions

The influence on the I-V characteristics and tunnel magnetoresistance (TMR), of impurities embedded into the insulating barrier I separating the two ferromagnetic electrodes F of a magnetic tunnel junction, was theoretically investigated. When the energy of the electron's bound state at the impurity site is close to the Fermi energy, it is shown that the current and TMR are strongly enhanced in the vicinity of the impurity. If the position of the impurity inside the barrier is asymmetric, e.g. closer to one of the interfaces F/I, the I-V characteristic exhibits a quasidiode behavior. The case of a single impurity and of a random distribution of impurities within a plane were both studied.

cond-mat.other↗

Current perpendicular to plane Giant Magnetoresistance (GMR) in laminated nanostructures

We theoretically studied spin dependent electron transport perpendicular-to-plain (CPP) in magnetic laminated multilayered structures by using Kubo formalism. We took into account not only bulk scattering, but the interface resistance due to both specular and diffuse reflection and also spin conserving and spin-flip processes. It was shown that spin-flip scattering at interfaces substantially reduces the value of GMR. This can explain the experimental observations that the CPP GMR ratio for laminated structures only slightly increases as compared to non-laminated ones despite lamination induces a significant increase in CPP resistance.

cond-mat.mtrl-sci↗

Magnetic tunnel junctions with impurities

The influence of impurities, embedded into the isolating spacer (I) between two ferromagnetic electrodes (F), on the I-V curve and tunnel magnetoresistance (TMR), is theoretically investigated. It is shown, that the current and TMR are strongly enhanced in the vicinity of the impurity under the condition that the energy of the electron's bound state on the impurity is close to the Fermi energy. If the position of the impurity inside the barrier is asymmetric, e.g. closer to the one of the interfaces F/I the I-V curve exhibits quasidiode behavior.

cond-mat.other↗

Excitations of incoherent spin-waves due to spin-transfer torque

As predicted by Slonczewski and Berger, the possibility of exciting microwave oscillations in a nanomagnet by a spin-polarized current has been recently demonstrated. This observation opens very important perspectives of applications in RF components. However, some unresolved inconsistencies are found when interpreting the magnetization dynamics results within the coherent spin-torque model (CSM). In some cases, the telegraph noise caused by spin-currents could not be described quantitatively by the CSM. This led to controversies about the need of an effective magnetic temperature model (ETM). Here we interpret the experimental results of Kiselev et al. [Nature 425, 380 (2003)] using micromagnetic simulations. We point out the key role played by incoherent spin-waves excitation due to spin-transfer effects. The incoherence is caused by the spatial inhomogeneities of the local fields, generating a distribution of local precession frequencies. It results in telegraph noise at zero temperature associated with transitions between attraction wells in phase space.

cond-mat.mtrl-sci↗

Influence of s-d interfacial scattering on the magnetoresistance of magnetic tunnel junctions

We propose the two-band s-d model to describe theoretically a diffuse regime of the spin-dependent electron transport in magnetic tunnel junctions (MTJ's) of the form F/O/F where F's are 3d transition metal ferromagnetic layers and O is the insulating spacer. We aim to explain the strong interface sensitivity of the tunneling properties of MTJ's and investigate the influence of electron scattering at the nonideal interfaces on the degradation of the TMR magnitude. The generalized Kubo formalism and the Green's functions method were used to calculate the conductance of the system. The vertex corrections to the conductivity were found with the use of "ladder" approximation combined with the coherent-potential approximation (CPA) that allowed to consider the case of strong electron scattering. It is shown that the Ward identity is satisfied in the framework of this approximation that provides the necessary condition for a conservation of a tunneling current. Based on the known results of ab-initio calculations of the TMR for ballistic junctions, we assume that exchange split quasi-free s-like electrons with the density of states being greater for the majority spin sub-band give the main contribution to the TMR effect. We show that, due to interfacial inter-band scattering, the TMR can be substantially reduced even down to zero value. This is related to the fact that delocalized quasi-free electrons can scatter into the strongly localized d sub-band with the density of states at the Fermi energy being larger for minority spins compared to majority spins. It is also shown that spin-flip electron scattering on the surface magnons within the interface leads to a further decrease of the TMR at finite temperature.

cond-mat.mtrl-sci↗

Extraordinary Hall effect in hybrid ferromagnetic/superconductor (F/S) bilayer

Extraordinary Hall effect (EHE) in bilayer F/S(N) was investigated theoretically. The conductivity tensor $σ_{αβ}$ is calculated in the Kubo formalism with Green functions found as the solutions of the Gorkov equations. We considered diffuse transport in the ferromagnetic layer, taking into account as a main mechanism of electron resistivity s-d scattering. In this model Gorkov equations for s-electrons in the ferromagnetic layer remain linear and are solved easily. It is shown that Hall field $E^H$ for both F/S and F/N contacts are step-functions of the coordinate perpendicular to the planes of the layers and have zero value in S(N) layer. The Andreev reflection increases the value of Hall constant $R_s$ for F/S case. The value of the Hall constant is $R_H^{F/S} = R_H^{bulk} (σ^{\uparrow} + σ^{\downarrow})^2 / 4 σ^{\uparrow}σ^{\downarrow}$, where $σ^{\uparrow}$ and $σ^{\downarrow}$ are conductivities of electrons with up and down spins, and $R_H^{bulk}$ is the Hall constant in the bulk ferromagnetic metal. In fact, $R_H^{F/S}$ coincides with EHE constant of the bilayer of two ferromagnetic metals with equal thickness and opposite directions of their magnetizations. So we can make a conclusion, that the ideal interface between ferromagnetic metal and superconductor may be considered like a mirror with inversion in spin space.

cond-mat.mtrl-sci↗

Resonant Spin-Dependent Tunneling in Spin-Valve Junctions in the Presence of Paramagnetic Impurities

The tunnel magnetoresistance (TMR) of F/O/F magnetic junctions, (F's are ferromagnetic layers and O is an oxide spacer) in the presence of magnetic impurities within the barrier, is investigated. We assume that magnetic couplings exist both between the spin of impurity and the bulk magnetization of the neighboring magnetic electrode, and between the spin of impurity and the spin of tunneling electron. Consequently, the resonance levels of the system formed by a tunneling electron and a paramagnetic impurity with spin S=1, are a sextet. As a result the resonant tunneling depends on the direction of the tunneling electron spin. At low temperatures and zero bias voltage the TMR of the considered system may be larger than TMR of the same structure without paramagnetic impurities. It is calculated that an increase in temperature leads to a decrease in the TMR amplitude due to excitation of spin-flip processes resulting in mixing of spin up and down channels. It is also shown that asymmetry in the location of the impurities within the barrier can lead to asymmetry in $I(V)$ characteristics of impurity assisted current and two mechanisms responsible for the origin of this effect are established. The first one is due to the excitation of spin-flip processes at low voltages and the second one arises from the shift of resonant levels inside the insulator layer under high applied voltages.

cond-mat.mtrl-sci↗

Does Giant Magnetoresistance Survive in Presence of Superconducting Contact?

The giant magnetoresistance (GMR) of ferromagnetic bilayers with a superconducting contact (F1/F2/S) is calculated in ballistic and diffusive regimes. As in spin-valve, it is assumed that the magnetization in the two ferromagnetic layers F1 and F2 can be changed from parallel to antiparallel. It is shown that the GMR defined as the change of conductance between the two magnetic configurations is an oscillatory function of the thickness of F2 layer and tends to an asymptotic positive value at large thickness. This is due to the formation of quantum well states in F2 induced by Andreev reflection at the F2/S interface and reflection at F1/F2 interface in antiparallel configuration. In the diffusive regime, if only spin-dependent scattering rates in the magnetic layers are considered (no difference in Fermi wave-vectors between spin up and down electrons) then the GMR is supressed due to the mixing of spin up and down electron-hole channels by Andreev reflection.

cond-mat.mtrl-sci↗