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B. Holzapfel

Publications and source records attributed to B. Holzapfel.

44 records · Page 3Linked to original sources
arXiv2010

Growth and characterization of epitaxial LuNi2B2C thin films on MgO single crystals

Biaxially textured LuNi2BC thin films with Tc up to 15.8 K and a residual resistivity ratio up to 15 have been prepared. The films were deposited on MgO(110) substrates using pulsed laser deposition from a stoichiometric target. Via the precise control of the deposition rate, a biaxial texture is favored within a broad range of the deposition temperature. The full epitaxial relationship between the borocarbide film, the \luo interface layer and the substrate is (110)[001]MgO II (110)[001]Lu2O3 II (001)[100]LuNi2B2C. A very sharp in--plane alignment of about 1\textdegree and an out--of--plane order of about 2.5\textdegree was achieved in the \luni layer. However, a systematic study using different deposition temperatures shows that the temperature is crucial for phase formation and appealing superconducting properties. Applying optimized deposition conditions, critical temperatures of up to 15.8 K and steep superconducting transitions of about 0.3 K are reproducibly obtained. We further analyzed the upper critical field Hc2 of one film deposited under optimized conditions. It was resistively measured along the [001] direction and fitted with a power law. The value of Hc2(0) = 9.82 T obtained from that fit is in very good agreement with single crystal data and the power exponent describing the positive curvature for small external magnetic fields of about 0.19 indicates a relatively low intraband scattering in the films.

cond-mat.supr-con↗
arXiv2010

LaFeAsO$_{1-x}$F$_{x}$ thin films: high upper critical fields and evidence of weak link behavior

High-quality superconducting LaFeAsO$_{1-x}$F$_{x}$ thin films were grown on single crystalline LaAlO$_{3}$ substrates with critical temperatures (onset) up to 28 K. Resistive measurements in high magnetic fields up to 40 T reveal a paramagnetically limited upper critical field, $μ_{0}H_{c2}$(0) around 77 T and a remarkable steep slope of -7.5 T/K near $T_{c}$. From transport measurements we observed a weak link behavior in low magnetic fields and the evidence for a broad reversible regime.

cond-mat.supr-con↗
arXiv2009

Direct observation of a nodeless superconducting energy gap in the optical conductivity of iron-pnictides

The temperature-dependent optical reflectivity and complex transmissivity of an epitaxially grown Ba(Fe$_{0.9}$Co$_{0.1}$)$_2$As$_2$ thin film were measured and the optical conductivity and permittivity evaluated over a wide frequency range. The opening of the superconducting gap $2Δ_0 = 3.7$ meV below $T_c\approx 20$ K is {\em directly} observed by a completely vanishing optical conductivity. The temperature and frequency dependent electrodynamic properties of Ba(Fe$_{0.9}$Co$_{0.1}$)$_2$As$_2$ in the superconducting state agree well with the BCS predictions with no nodes in the order parameter. The spectral weight of the condensate $1.94\times 10^7 {\rm cm}^{-2}$ corresponds to a London penetration depth $λ_L=3600$ Å.

cond-mat.supr-con↗
arXiv2009

Strong Tc dependence for strained, epitaxial Ba(Fe1-xCox)2As2 thin films

Ba(Fe1-xCox)2As2 superconducting thin films have been grown on SrTiO3, (La,Sr)(Al,Ta)O3, LaAlO3 and YAlO3 (YAO) single crystal substrates by pulsed laser deposition. All the films, except on YAO, have been grown epitaxially without buffer layers. The films deposited on YAO contained 45 degree in-plane rotated grains and showed a broad superconducting transition. The onset Tc of the films is observed to increase from 16.2 K to 24.5 K with increasing c/a, mainly due to a slight distortion of the AsFe4 tetrahedron. From this correlation, we expect that higher superconducting transition temperatures than 24.5 K in a strained epitaxial film may be possible.

cond-mat.supr-con↗
arXiv2009

Epitaxial LaFeAsOF thin films grown by pulsed laser deposition

Superconducting and epitaxially grown LaFeAsOF thin films were successfully prepared on (001)-oriented LaAlO3 substrates using pulsed laser deposition. The prepared thin films show exclusively a single in-plane orientation with epitaxial relation (001)[100] parallel to (001)[100] and a FWHM value of 1deg. Furthermore, resistive measurement of the superconducting transition temperature revealed a Tc90 of 25K with a high residual resistive ratio of 6.8. The applied preparation technique, standard thin film pulsed laser deposition at room temperature in combination with a subsequent post annealing process, is suitable for fabrication of high quality LaFeAsO1-xFx thin films. A high upper critical field of 76.2 T was evaluated for magnetic fields applied perpendicular to the c-axis and the anisotropy was calculated to be 3.3 assuming single band superconductivity.

cond-mat.supr-con↗
arXiv2008

Epitaxial growth and anisotropy of La(O,F)FeAs thin films deposited by Pulsed Laser Deposition

LaFeAsO1-xFx thin films were deposited successfully on (001)-oriented LaAlO3 and MgO substrates from stoichiometric LaFeAsO1-xFx polycrystalline targets with fluorine concentrations up to x = 0.25 by PLD. Room temperature deposition and post annealing of the films yield nearly phase pure films with a pronounced c-axis texture and a strong biaxial in-plane orientation. Transport measurements show metallic resistance and onset of superconductivity at 11 K. Hc2(T) was determined by resistive measurements and yield Hc2 values of 3 T at 3.6 K for B||c and 6 T at 6.4 K for B||ab.

cond-mat.supr-con↗
arXiv2005

Distribution of the superconducting gap in an YNi2B2C film studied by point contact spectroscopy

The differential resistances $R_d=dV/dI(V)$ of point contacts between a normal metal and a c axis oriented YNi2B2C film ($T_c$ = 15.2K) in the superconducting (SC) state have been investigated. $R_d(V)$ contains clear "gap" features connected with processes of Andreev reflection at the boundary between normal metal and superconductor that allow the determination of the SC gap $Δ$ and its temperature and magnetic field dependence. A distribution of $Δ$ from $Δ_min\approx$ 1.5 meV to $Δ_max\approx$ 2.4 meV is revealed; however the critical temperature $T_c$ in all cases corresponded to that of the film. The value 2$Δ_max/k_BT_c\approx$3.66 is close to the BCS value of 3.52, and the temperature dependence $Δ(T)$ is BCS-like, irrespective of the actual $Δ$ value. It is supposed that the distribution of $Δ$ can be attributed to a gap anisotropy or to a multiband nature of the SC state in YNi2B2C, rather than to the presence of nodes in the gap.

cond-mat.supr-con↗