arXiv subjects

C. Ciuti

Publications and source records attributed to C. Ciuti.

28 records · Page 2Linked to original sources

arXiv2008

Observation of Superfluidity of Polaritons in Semiconductor Microcavities

One of the most striking manifestations of quantum coherence in interacting boson systems is superfluidity. Exciton-polaritons in semiconductor microcavities are two-dimensional composite bosons predicted to behave as particular quantum fluids. We report the observation of superfluid motion of polaritons created by a laser in a semiconductor microcavity. Superfluidity is investigated in terms of the Landau criterion and manifests itself as the suppression of scattering from defects when the flow velocity is slower than the speed of sound in the fluid. On the other hand, a Cerenkov-like wake pattern is clearly observed when the flow velocity exceeds the speed of sound. The experimental findings are in excellent quantitative agreement with the predictions based on a generalized Gross-Pitaevskii theory, showing that polaritons in microcavities constitute a very rich system for exploring the physics of non-equilibrium quantum fluids.

cond-mat.mtrl-sci↗

arXiv2007

Spatial and spectral shape of inhomogeneous non-equilibrium exciton-polariton condensates

We develop a mean-field theory of the spatial profile and the spectral properties of polariton condensates in nonresonantly pumped semiconductor microcavities in the strong coupling regime. Predictions are obtained for both the continuous-wave and the pulsed excitation regimes and the specific signatures of the non-equilibrium character of the condensation process are pointed out. A striking sensitivity of the condensate shape on the optical pump spot size is demonstrated by analytical and numerical calculations, in good quantitative agreement with recent experimental observations.

cond-mat.other↗

arXiv2003

Evidence for parametric memory and correlation in semiconductor microcavities

We measured the dynamics of polariton parametric stimulated scattering in semiconductor microcavities, by time-resolving the amplified signal with 250 fs resolution. Our experiments demonstrate that the stimulation process is considerably delayed with respect to the arrival time of both probe and pump pulses. This effect is clearly observable in our high quality sample due to the long lifetime of the microcavity polaritons (about 10 ps), and it is in excellent agreement with the model describing the coherent conversion of two pump polaritons into a signal-idler pair. We demonstrate that the non-instantaneous character of the polariton stimulation occurs because the polariton-wave amplification requires the build up of correlated signal-idler polariton fields.

cond-mat↗

arXiv2003

The Silicon Inversion Layer With A Ferromagnetic Gate: A Novel Spin Source

Novel spin transport behavior is theoretically shown to result from replacing the usual metal (or poly-silicon) gate in a silicon field-effect transistor with a ferromagnet, separated from the semiconductor by an ultra-thin oxide. The spin-dependent interplay between the drift current (due to a source-drain bias) and the diffusion current (due to carrier leakage into the ferromagnetic gate) results in a rich variety of spin dependence in the current that flows through such a device. We examine two cases of particular interest: (1) creating a 100% spin-polarized electrical current and (2) creating a pure spin current without a net electrical current. A spin-valve consisting of two sequential ferromagnetic gates is shown to exhibit magnetoresistance dependent upon the relative orientations of the magnetization of the two ferromagnets. The magnetoresistance ratio grows to arbitrarily large values in the regime of low source-drain bias, and is limited only by the spin-flip time in the channel.

cond-mat.mes-hall↗

arXiv2003

Theory of Spin Transport Induced by Ferromagnetic Proximity On a Two-Dimensional Electron Gas

A theory of the proximity effects of the exchange splitting in a ferromagnetic metal on a two dimensional electron gas (2DEG) in a semiconductor is presented. The resulting spin-dependent energy and lifetime in the 2DEG create a marked spin-splitting in the driven in-plane current. The theory of the planar transport allows for current leakage into the ferromagnetic layer through the interface, which leads to a competition between drift and diffusion. The spin-dependent in-plane conductivity of the 2DEG may be exploited to provide a new paradigm for spintronics devices based on planar devices in a field-effect transistor configuration. An illustrative example is provided through the transport theory of a proposed spin-valve which consists of a field-effect transistor configuration with two ferromagnetic gates. Results are provided for two experimentally accessible systems: the silicon inversion layer and the naturally-formed InAs accumulation layer.

cond-mat.mes-hall↗

arXiv2003

Theory of Spin Orientation of Semiconductor Carriers at a Ferromagnetic Interface

A quantum theory of the spin-dependent scattering of semiconductor electrons by a Schottky barrier at an interface with a ferromagnet is presented. The reflection of unpolarized non-equilibrium carriers produces spontaneous spin-polarization in the semiconductor. If a net spin-polarization pre-exists in the semiconductor, the combination of the ferromagnet magnetization and the incident carrier polarization combine to tilt the reflected polarization in the semiconductor. The spin reflection properties are investigated as functions of the system characteristics: the Schottky barrier height, semiconductor doping and applied bias. The effect on reflection due to the variation of the barrier width with electron energy is contrasted for two means of excitation: optical or electrical. Optically excited electrons have a wider energy spread than the near-equilibrium excitation from non-magnetic ohmic contacts.

cond-mat.mes-hall↗

arXiv2002

Spin-dependent properties of a two-dimensional electron gas with ferromagnetic gates

A theoretical prediction of the spin-dependent electron self-energy and in-plane transport of a two-dimensional electron gas in proximity with a ferromagnetic gate is presented. The application of the predicted spin-dependent properties is illustrated by the proposal of a device configuration with two neighboring ferromagnetic gates which produces a magnetoresistance effect on the channel current generated by nonmagnetic source and drain contacts. Specific results are shown for a silicon inversion layer with iron gates. The gate leakage current is found to be beneficial to the spin effects.

cond-mat.mes-hall↗

arXiv2002

Polariton dynamics and Bose-Einstein condensation in semiconductor microcavities

We present a theoretical model that allows us to describe the polariton dynamics in a semiconductor microcavity at large densities, for the case of non-resonant excitation. Exciton-polariton scattering from a thermalized exciton reservoir is identified as the main mechanism for relaxation into the lower polariton states. A maximum in the polariton distribution that shifts towards lower energies with increasing pump-power or temperature is shown, in agreement with recent experiments. Above a critical pump-power, macroscopic occupancies (5 \times 10^4) can be achieved in the lowest energy polariton state. Our model predicts the possibility of Bose-Einstein Condensation of polaritons, driven by exciton-polariton interaction, at densities well below the saturation density for CdTe microcavities.

cond-mat↗

arXiv2002

Ferromagnetic imprinting of spin polarization in a semiconductor

We present a theory of the imprinting of the electron spin coherence and population in an n-doped semiconductor which forms a junction with a ferromagnet. The reflection of non-equilibrium semiconductor electrons at the interface provides a mechanism to manipulate the spin polarization vector. In the case of unpolarized excitation, this ballistic effect produces spontaneous electron spin coherence and nuclear polarization in the semiconductor, as recently observed by time-resolved Faraday rotation experiments. We investigate the dependence of the spin reflection on the Schottky barrier height and the doping concentration in the semiconductor and suggest control mechanisms for possible device applications.

cond-mat.mes-hall↗

arXiv2000

Parametric Luminescence of Microcavity Polaritons

The spectral and dispersive emission properties are analytically determined for the two-dimensional system of exciton-polaritons in microcavities excited by a resonant and coherent optical pump. New collective excitations result from the anomalous coupling between one generic polariton state and its idler, created by the scattering of two pumped polaritons. The corresponding parametric correlation is stimulated by the emitter and idler populations and drives very efficiently the luminescence. The intrinsic properties of the collective excitations determine a peculiar emission pattern.

cond-mat.mes-hall↗