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Christoph Adelmann

Publications and source records attributed to Christoph Adelmann.

At least 55 records · Page 3Linked to original sources

Spin Wave Based Approximate Computing

Spin Waves(SWs) enable the realization of energy efficient circuits as they propagate and interfere within waveguides without consuming noticeable energy. However, SW computing can be even more energy efficient by taking advantage of the approximate computing paradigm as many applications are error-tolerant like multimedia and social media. In this paper we propose an ultra-low energy novel Approximate Full Adder(AFA) and a 2-bit inputs Multiplier(AMUL). We validate the correct functionality of our proposal by means of micromagnetic simulations and evaluate the approximate FA figure of merit against state-of-the-art accurate SW, 7nmCMOS, Spin Hall Effect(SHE), Domain Wall Motion(DWM), accurate and approximate 45nmCMOS, Magnetic Tunnel Junction(MTJ), and Spin-CMOS FA implementations. Our results indicate that AFA consumes 43% and 33% less energy than state-of-the-art accurate SW and 7nmCMOS FA, respectively, and saves 69% and 44% when compared with accurate and approximate 45nm CMOS, respectively, and provides a 2 orders of magnitude energy reduction when compared with accurate SHE, accurate and approximate DWM, MTJ, and Spin-CMOS, counterparts. In addition, it achieves the same error rate as approximate 45nmCMOS and Spin-CMOS FA whereas it exhibits 50% less error rate than the approximate DWM FA. Furthermore, it outperforms its contenders in terms of area by saving at least 29% chip real-estate. AMUL is evaluated and compared with state-of-the-art accurate SW and 16nm CMOS accurate and approximate state-of-the-art designs. The evaluation results indicate that it saves at least 2x and 5x energy in comparison with the state-of-the-art SW designs and 16nm CMOS accurate and approximate designs, respectively, and has an average error rate of 10%, while the approximate CMOS MUL has an average error rate of 13%, and requires at least 64% less chip real-estate.

cond-mat.mes-hall↗

Excitation and propagation of spin waves in non-uniformly magnetized waveguides

The characteristics of spin waves in ferromagnetic waveguides with nonuniform magnetization have been investigated for situations where the shape anisotropy field of the waveguide is comparable to the external bias field. Spin-wave generation was realized by the magnetoelastic effect by applying normal and shear strain components, as well as by the Oersted field emitted by an inductive antenna. The magnetoelastic excitation field has a nonuniform profile over the width of the waveguide because of the nonuniform magnetization orientation, whereas the Oersted field remains uniform. Using micromagnetic simulations, we indicate that both types of excitation fields generate quantised width modes with both odd and even mode numbers as well as tilted phase fronts. We demonstrate that these effects originate from the average magnetization orientation with respect to the main axes of the magnetic waveguide. Furthermore, it is indicated that the excitation efficiency of the second-order mode generally surpasses that of the first-order mode due to their symmetry. The relative intensity of the excited modes can be controlled by the strain state as well as by tuning the dimensions of the excitation area. Finally, we demonstrate that the nonreciprocity of spin-wave radiation due to the chirality of an Oersted field generated by an inductive antenna is absent for magnetoelastic spin-wave excitation.

cond-mat.mes-hall↗

First experimental demonstration of a scalable linear majority gate based on spin waves

We report on the first experimental demonstration of majority logic operation using spin waves in a scaled device with an in-line input and output layout. The device operation is based on the interference of spin waves generated and detected by inductive antennas in an all-electrical microwave circuit. We demonstrate the full truth table of a majority logic function with the ability to distinguish between strong and weak majority, as well as an inverted majority function by adjusting the operation frequency. Circuit performance projections predict low energy consumption of spin wave based compared to CMOS for large arithmetic circuits.

cond-mat.mes-hall↗

Spin Wave Normalization Towards all Magnonic Circuits

The key enabling factor for Spin Wave (SW) technology utilization for building ultra low power circuits is the ability to energy efficiently cascade SW basic computation blocks. SW Majority gates, which constitute a universal gate set for this paradigm, operating on phase encoded data are not input output coherent in terms of SW amplitude, and as such, their cascading requires information representation conversion from SW to voltage and back, which is by no means energy effective. In this paper, a novel conversion free SW gate cascading scheme is proposed that achieves SW amplitude normalization by means of a directional coupler. After introducing the normalization concept, we utilize it in the implementation of three simple circuits and, to demonstrate its bigger scale potential, of a 2-bit inputs SW multiplier. The proposed structures are validated by means of the Object Oriented Micromagnetic Framework (OOMMF) and GPU-accelerated Micromagnetics (MuMax3). Furthermore, we assess the normalization induced energy overhead and demonstrate that the proposed approach consumes 20% to 33% less energy when compared with the transducers based conventional counterpart. Finally, we introduce a normalization based SW 2-bit inputs multiplier design and compare it with functionally equivalent SW transducer based and 16nm CMOS designs. Our evaluation indicate that the proposed approach provided 26% and 6.25x energy reductions when compared with the conventional approach and 16nm CMOS counterpart, respectively, which demonstrates that our proposal is energy effective and opens the road towards the full utilization of the SW paradigm potential and the development of SW only circuits.

physics.app-ph↗

Multi-frequency Data Parallel Spin Wave Logic Gates

By their very nature, Spin Waves (SWs) with different frequencies can propagate through the same waveguide without affecting each other, while only interfering with their own species. Therefore, more SW encoded data sets can coexist, propagate, and interact in parallel, which opens the road towards hardware replication free parallel data processing. In this paper, we take advantage of these features and propose a novel data parallel spin wave based computing approach. To explain and validate the proposed concept, byte-wide 2-input XOR and 3-input Majority gates are implemented and validated by means of Object Oriented MicroMagnetic Framework (OOMMF) simulations. Furthermore, we introduce an optimization algorithm meant to minimize the area overhead associated with multifrequency operation and demonstrate that it diminishes the byte-wide gate area by 30% and 41% for XOR and Majority implementations, respectively. To get inside on the practical implications of our proposal we compare the byte-wide gates with conventional functionally equivalent scalar SW gate based implementations in terms of area, delay, and power consumption. Our results indicate that the area optimized 8-bit 2-input XOR and 3-input Majority gates require 4.47x and 4.16x less area, respectively, at the expense of 5% and 7% delay increase, respectively, without inducing any power consumption overhead. Finally, we discuss factors that are limiting the currently achievable parallelism to 8 for phase based gate output detection and demonstrate by means of OOMMF simulations that this can be increased 16 for threshold based detection based gates.

physics.app-ph↗

An Introduction to Spin Wave Computing

This paper provides a tutorial overview over recent vigorous efforts to develop computing systems based on spin waves instead of charges and voltages. Spin-wave computing can be considered as a subfield of spintronics, which uses magnetic excitations for computation and memory applications. The tutorial combines backgrounds in spin-wave and device physics as well as circuit engineering to create synergies between the physics and electrical engineering communities to advance the field towards practical spin-wave circuits. After an introduction to magnetic interactions and spin-wave physics, all relevant basic aspects of spin-wave computing and individual spin-wave devices are reviewed. The focus is on spin-wave majority gates as they are the most prominently pursued device concept. Subsequently, we discuss the current status and the challenges to combine spin-wave gates and obtain circuits and ultimately computing systems, considering essential aspects such as gate interconnection, logic level restoration, input-output consistency, and fan-out achievement. We argue that spin-wave circuits need to be embedded in conventional CMOS circuits to obtain complete functional hybrid computing systems. The state of the art of benchmarking such hybrid spin-wave--CMOS systems is reviewed and the current challenges to realize such systems are discussed. The benchmark indicates that hybrid spin-wave--CMOS systems promise ultralow-power operation and may ultimately outperform conventional CMOS circuits in terms of the power-delay-area product. Current challenges to achieve this goal include low-power signal restoration in spin-wave circuits as well as efficient spin-wave transducers.

physics.app-ph↗

Compact tunable YIG-based RF resonators

We report on the design, fabrication, and characterization of compact tunable yttrium iron garnet (YIG) based RF resonators based on $μ$m-sized spin-wave cavities. Inductive antennas with both ladder and meander configurations were used as transducers between spin waves and RF signals. The excitation of ferromagnetic resonance and standing spin waves in the YIG cavities led to sharp resonances with quality factors up to 350. The observed spectra were in excellent agreement with a model based on the spin-wave dispersion relations in YIG, showing a high magnetic field tunability of about 29 MHz/mT.

physics.app-ph↗

Electrical spin-wave spectroscopy in nanoscale waveguides with nonuniform magnetization

Spin waves modes in magnetic waveguides with width down to 320 nm have been studied by electrical propagating spin-wave spectroscopy and micromagnetic simulations for both longitudinal and transverse magnetic bias fields. For longitudinal bias fields, a 1.3 GHz wide spin-wave band was observed in agreement with analytical dispersion relations for uniform magnetization. However, transverse bias field led to several distinct bands, corresponding to different quantized width modes, with both negative and positive slopes. Micromagnetic simulations showed that, in this geometry, the magnetization was nonuniform and tilted due to the strong shape anisotropy of the waveguides. Simulations of the quantized spin-wave modes in such nonuniformly magnetized waveguides resulted in spin wave dispersion relations in good agreement with the experiments.

cond-mat.mes-hall↗

Magnonic band structure in vertical meander-shaped CoFeB thin films

The dispersion of spin waves in vertical meander-shaped CoFeB thin films consisting of segments located at 90° angles with respect to each other is investigated by Brillouin light scattering spectroscopy. We reveal the periodic character of several dispersive branches as well as alternating frequency ranges where spin waves are allowed or forbidden to propagate. Noteworthy is the presence of the frequency band gaps between each couple of successive modes only for wave numbers k=n$π$/a, where n is an even integer number and a is the size of the meander unit cell, whereas the spectra show propagating modes in the orthogonal film segments for the other wavenumbers. The micromagnetic simulations and analytical calculations allow us to understand and explain the results in terms of the mode spatial localization and symmetry. The obtained results demonstrate the wave propagation in three dimensions opening the path for multi-level magnonic architectures for signal processing.

physics.app-ph↗

Confined magnetoelastic waves in thin waveguides

The characteristics of confined magnetoelastic waves in nanoscale ferromagnetic magnetostrictive waveguides have been investigated by a combination of analytical and numerical calculations. The presence of both magnetostriction and inverse magnetostriction leads to the coupling between confined spin waves and elastic Lamb waves. Numerical simulations of the coupled system have been used to extract the dispersion relations of the magnetoelastic waves as well as their mode profiles.

cond-mat.mes-hall↗

Temperature-Dependent Resistivity of Alternative Metal Thin Films

The temperature coefficients of the resistivity (TCR) of Cu, Ru, Co, Ir, and W thin films have been investigated as a function of film thickness below 10 nm. Ru, Co, and Ir show bulk-like TCR values that are rather independent of the thickness whereas the TCR of Cu increases strongly with decreasing thickness. Thin W films show negative TCR values, which can be linked to high disorder. The results are qualitatively consistent with a temperature-dependent semiclassical thin film resistivity model that takes into account phonon, surface, and grain boundary scattering.

cond-mat.mtrl-sci↗

Magnetoelastic waves in thin films

This paper discusses the physics of magnetoelasticity and magnetoelastic waves as well as their mathematical description. Magnetoelastic waves occur as a result of strong coupling between spin waves and elastic waves in magnetostrictive ferromagnetic media. In a first part, the basic behavior of spin waves is reviewed in both bulk ferromagnets as well as in thin films. Next, elastic waves are discussed with a focus on thin films. Finally, the interactions between the elastic and magnetic domains are described and it is shown how this results in the formation of magnetoelastic waves. Based on the description of bulk magnetoelastic waves, a theory for magnetoelastic waves in thin films is developed and their dispersion relations are derived. It is shown that the behavior strongly depends on the geometry of the system, especially on the polarization of spin and elastic waves and the direction of the magnetization of the magnetostrictive ferromagnet.

cond-mat.mes-hall↗

Integrated magnonic half-adder

Spin waves and their quanta magnons open up a promising branch of high-speed and low-power information processing. Several important milestones were achieved recently in the realization of separate magnonic data processing units including logic gates, a magnon transistor and units for non-Boolean computing. Nevertheless, the realization of an integrated magnonic circuit consisting of at least two logic gates and suitable for further integration is still an unresolved challenge. Here we demonstrate such an integrated circuit numerically on the example of a magnonic half-adder. Its key element is a nonlinear directional coupler serving as combined XOR and AND logic gate that utilizes the dependence of the spin wave dispersion on its amplitude. The circuit constitutes of only three planar nano-waveguides and processes all information within the magnon domain. Benchmarking of the proposed device is performed showing the potential for sub-aJ energy consumption per operation.

physics.app-ph↗

Opportunities and challenges for spintronics in the microelectronic industry

Spin-based electronics has evolved into a major field of research that broadly encompasses different classes of materials, magnetic systems, and devices. This review describes recent advances in spintronics that have the potential to impact key areas of information technology and microelectronics. We identify four main axes of research: nonvolatile memories, magnetic sensors, microwave devices, and beyond-CMOS logic. We discuss state-of-the-art developments in these areas as well as opportunities and challenges that will have to be met, both at the device and system level, in order to integrate novel spintronic functionalities and materials in mainstream microelectronic platforms.

physics.app-ph↗

On the extraction of resistivity and area of nanoscale interconnect lines by temperature-dependent resistance measurements

Several issues concerning the applicability of the temperature coefficient of the resistivity (TCR) method to scaled interconnect lines are discussed. The central approximation of the TCR method, the substitution of the interconnect wire TCR by the bulk TCR becomes doubtful when the resistivity of the conductor metal is strongly increased by finite size effects. Semiclassical calculations for thin films show that the TCR deviates from bulk values when the surface roughness scattering contribution to the total resistivity becomes significant with respect to grain boundary scattering, an effect that might become even more important in nanowires due to their larger surface-to-volume ration. In addition, the TCR method is redeveloped to account for line width roughness. It is shown that for rough wires, the TCR method yields the harmonic average of the cross-sectional area as well as, to first order, the accurate value of the resistivity at the extracted area. Finally, the effect of a conductive barrier or liner layer on the TCR method is discussed. It is shown that the liner or barrier parallel conductance can only be neglected when it is lower than about 5 to 10% of the total conductance. It is furthermore shown that neglecting the liner/barrier parallel conductance leads mainly to an overestimation of the cross-sectional area of the center conductor whereas its resistivity is less affected.

cond-mat.mtrl-sci↗

Resistivity scaling model for metals with conduction band anisotropy

It is generally understood that the resistivity of metal thin films scales with film thickness mainly due to grain boundary and boundary surface scattering. Recently, several experiments and ab initio simulations have demonstrated the impact of crystal orientation on resistivity scaling. The crystal orientation cannot be captured by the commonly used resistivity scaling models and a qualitative understanding of its impact is currently lacking. In this work, we derive a resistivity scaling model that captures grain boundary and boundary surface scattering as well as the anisotropy of the band structure. The model is applied to Cu and Ru thin films, whose conduction bands are (quasi-)isotropic and anisotropic respectively. After calibrating the anisotropy with ab initio simulations, the resistivity scaling models are compared to experimental resistivity data and a renormalization of the fitted grain boundary reflection coefficient can be identified for textured Ru.

cond-mat.mes-hall↗

Spin wave emission by spin-orbit torque antennas

We study the generation of propagating spin waves in Ta/CoFeB waveguides by spin-orbit torque antennas and compare them to conventional inductive antennas. The spin-orbit torque was generated by a transverse microwave current across the magnetic waveguide. The detected spin wave signals for an in-plane magnetization across the waveguide (Damon-Eshbach configuration) exhibited the expected phase rotation and amplitude decay upon propagation when the current spreading was taken into account. Wavevectors up to about 6 rad/$μ$m could be excited by the spin-orbit torque antennas despite the current spreading, presumably due to the non-uniformity of the microwave current. The relative magnitude of generated anti-damping spin-Hall and Oersted fields was calculated within an analytic model and it was found that they contribute approximately equally to the total effective field generated by the spin-orbit torque antenna. Due to the ellipticity of the precession in the ultrathin waveguide and the different orientation of the anti-damping spin-Hall and Oersted fields, the torque was however still dominated by the Oersted field. The prospects for obtaining a pure spin-orbit torque response are discussed, as are the energy efficiency and the scaling properties of spin-orbit torque antennas.

cond-mat.mes-hall↗

Finite Size Effects in Highly Scaled Ruthenium Interconnects

Ru has been considered a candidate to replace Cu-based interconnects in VLSI circuits. Here, a methodology is proposed to predict the resistivity of (Ru) interconnects. First, the dependence of the Ru thin film resistivity on the film thickness is modeled by the semiclassical Mayadas-Shatzkes (MS) approach. The fitting parameters thus obtained are then used as input in a modified MS model for nanowires to calculate wire resistivities. Predicted experimental resistivities agreed within about 10%. The results further indicate that grain boundary scattering was the dominant scattering mechanism in scaled Ru interconnects.

cond-mat.mtrl-sci↗