arXiv subjects

D. J. Reilly

Publications and source records attributed to D. J. Reilly.

52 records · Page 3Linked to original sources

arXiv2006

Phenomenology of the 0.7 conductance feature

We describe a phenomenological model for the conductance feature near $0.7 \times 2e^2/h$ that occurs in quantum point contacts. We focus on the transconductance at finite source-drain bias and contrast our model with the results expected from a single-particle picture. Good agreement is seen in comparing the model with experimental data, taken on ultra-low-disorder GaAs induced electron systems. Although simple, our phenomenology suggests important boundary conditions for an underlying microscopic theory.

cond-mat.mes-hall↗

arXiv2005

Charge sensing in carbon nanotube quantum dots on microsecond timescales

We report fast, simultaneous charge sensing and transport measurements of gate-defined carbon nanotube quantum dots. Aluminum radio frequency single electron transistors (rf-SETs) capacitively coupled to the nanotube dot provide single-electron charge sensing on microsecond timescales. Simultaneously, rf reflectometry allows fast measurement of transport through the nanotube dot. Charge stability diagrams for the nanotube dot in the Coulomb blockade regime show extended Coulomb diamonds into the high-bias regime, as well as even-odd filling effects, revealed in charge sensing data.

cond-mat.mes-hall↗

arXiv2005

An ion-implanted silicon single-electron transistor

We report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads of the Si-SET are formed by the implantation of phosphorus ions to a density above the metal-insulator-transition, with the tunnel junctions created by undoped regions. Surface gates above each of the tunnel junctions independently control the tunnel coupling between the Si-SET island and leads. The device shows periodic Coulomb blockade with a charging energy e$^2$/2C$_Σ$ $\sim$ 250 $μ$eV, and demonstrates a reproducible and controllable pathway to a silicon-based SET using CMOS processing techniques.

cond-mat.mes-hall↗

arXiv2004

Direct measurement of the maximum tunnel rate in a radio frequency single electron transistor operated as a microwave mixer

By operating the radio frequency single electron transistor (rf-SET) as a mixer we present measurements in which the RC roll-off of the tunnel junctions is observed at high frequencies. Our technique makes use of the non-linear rf-SET transconductance to mix high frequency gate signals and produce difference-frequency components that fall within the bandwidth of the rf-SET. At gate frequencies >15GHz the induced charge on the rf-SET island is altered on time-scales faster than the inverse tunnel rate, preventing mixer operation. We suggest the possibility of utilizing this technique to sense high frequency signals beyond the usual rf-SET bandwidth.

cond-mat.mes-hall↗

arXiv2004

Phenomenological model for the 0.7 conductance feature in quantum wires

One dimensional (1D) quantum wires exhibit a conductance feature near 0.7 x 2e^2/h in connection with many-body interactions involving the electron spin. With the possibility of exploiting this effect for novel spintronic device applications, efforts have focused on uncovering a complete microscopic theory to explain this conductance anomaly. Here we present conductance calculations based on a simple phenomenological model for a gate-dependent spin gap that are in excellent agreement with experimental data taken on ultra-low-disorder quantum wires. Taken together the phenomenology and experimental data indicate that the 0.7 feature depends strongly on the potential profile of the contact region, where the reservoirs meet the 1D wire. Microscopic explanations that may under-pin the phenomenological description are also discussed.

cond-mat.mes-hall↗

arXiv2004

Single-Shot Readout with the Radio Frequency Single Electron Transistor in the Presence of Charge Noise

The radio frequency single electron transistor (rf-SET) possesses key requirements necessary for reading out a solid state quantum computer. This work explores the use of the rf-SET as a single-shot readout device in the presence of 1/f and telegraph charge noise. For a typical spectrum of 1/f noise we find that high fidelity, single-shot measurements are possible for signals q > 0.01e. For the case of telegraph noise, we present a cross-correlation measurement technique that uses two rf-SETs to suppress the effect of random switching events on readout. We demonstrate this technique by monitoring the charge state of a metal double dot system on microsecond time-scales. Such a scheme will be advantageous in achieving high readout fidelity in a solid state quantum computer.

cond-mat.mes-hall↗

arXiv2004

Observing sub-microsecond telegraph noise with the radio frequency single electron transistor

Telegraph noise, which originates from the switching of charge between meta-stable trapping sites, becomes increasingly important as device sizes approach the nano-scale. For charge-based quantum computing, this noise may lead to decoherence and loss of read out fidelity. Here we use a radio frequency single electron transistor (rf-SET) to probe the telegraph noise present in a typical semiconductor-based quantum computer architecture. We frequently observe micro-second telegraph noise, which is a strong function of the local electrostatic potential defined by surface gate biases. We present a method for studying telegraph noise using the rf-SET and show results for a charge trap in which the capture and emission of a single electron is controlled by the bias applied to a surface gate.

cond-mat.mes-hall↗

arXiv2004

Radio-frequency operation of a double-island single-electron transistor

We present results on a double-island single-electron transistor (DISET) operated at radio-frequency (rf) for fast and highly sensitive detection of charge motion in the solid state. Using an intuitive definition for the charge sensitivity, we compare a DISET to a conventional single-electron transistor (SET). We find that a DISET can be more sensitive than a SET for identical, minimum device resistances in the Coulomb blockade regime. This is of particular importance for rf operation where ideal impedance matching to 50 Ohm transmission lines is only possible for a limited range of device resistances. We report a charge sensitivity of 5.6E-6 e/sqrt(Hz) for a rf-DISET, together with a demonstration of single-shot detection of small (<=0.1e) charge signals on microsecond timescales.

cond-mat.other↗

arXiv2004

Development and operation of the twin radio frequency single electron transistor for solid state qubit readout

Ultra-sensitive detectors and readout devices based on the radio frequency single electron transistor (rf-SET) combine near quantum-limited sensitivity with fast operation. Here we describe a twin rf-SET detector that uses two superconducting rf-SETs to perform fast, real-time cross-correlated measurements in order to distinguish sub-electron signals from charge noise on microsecond time-scales. The twin rf-SET makes use of two tuned resonance circuits to simultaneously and independently address both rf-SETs using wavelength division multiplexing (WDM) and a single cryogenic amplifier. We focus on the operation of the twin rf-SET as a charge detector and evaluate the cross-talk between the two resonance circuits. Real time suppression of charge noise is demonstrated by cross correlating the signals from the two rf-SETs. For the case of simultaneous operation, the rf-SETs had charge sensitivities of $δq_{SET1} = 7.5 μe/\sqrt{Hz}$ and $δq_{SET2} = 4.4 μe/\sqrt{Hz}$.

cond-mat.mes-hall↗

arXiv2003

Charge-based quantum computing using single donors in semiconductors

Solid-state quantum computer architectures with qubits encoded using single atoms are now feasible given recent advances in atomic doping of semiconductors. Here we present a charge qubit consisting of two dopant atoms in a semiconductor crystal, one of which is singly ionised. Surface electrodes control the qubit and a radio-frequency single electron transistor provides fast readout. The calculated single gate times, of order 50ps or less, are much shorter than the expected decoherence time. We propose universal one- and two-qubit gate operations for this system and discuss prospects for fabrication and scale up.

cond-mat↗

arXiv2003

Charge-based silicon quantum computer architectures using controlled single-ion implantation

We report a nanofabrication, control and measurement scheme for charge-based silicon quantum computing which utilises a new technique of controlled single ion implantation. Each qubit consists of two phosphorus dopant atoms ~50 nm apart, one of which is singly ionized. The lowest two energy states of the remaining electron form the logical states. Surface electrodes control the qubit using voltage pulses and dual single electron transistors operating near the quantum limit provide fast readout with spurious signal rejection. A low energy (keV) ion beam is used to implant the phosphorus atoms in high-purity Si. Single atom control during the implantation is achieved by monitoring on-chip detector electrodes, integrated within the device structure, while positional accuracy is provided by a nanomachined resist mask. We describe a construction process for implanted single atom and atom cluster devices with all components registered to better than 20 nm, together with electrical characterisation of the readout circuitry. We also discuss universal one- and two-qubit gate operations for this architecture, providing a possible path towards quantum computing in silicon.

cond-mat↗

arXiv2002

Self-aligned fabrication process for silicon quantum computer devices

We describe a fabrication process for devices with few quantum bits (qubits), which are suitable for proof-of-principle demonstrations of silicon-based quantum computation. The devices follow the Kane proposal to use the nuclear spins of 31P donors in 28Si as qubits, controlled by metal surface gates and measured using single electron transistors (SETs). The accurate registration of 31P donors to control gates and read-out SETs is achieved through the use of a self-aligned process which incorporates electron beam patterning, ion implantation and triple-angle shadow-mask metal evaporation.

cond-mat↗

arXiv2002

Magnetic susceptibility of the normal-superconducting transition in high-purity single-crystal alpha-uranium

We report complex ac magnetic susceptibility measurements of a superconducting transition in very high-quality single-crystal alpha-uranium using microfabricated coplanar magnetometers. We identify an onset of superconductivity at T~0.7 K in both the real and imaginary components of the susceptibility which is confirmed by resistivity data. A superconducting volume fraction argument, based on a comparison with a calibration YBCO sample, indicates that the superconductivity in these samples may be filamentary. Our data also demonstrate the sensitivity of the coplanar micro-magnetometers, which are ideally suited to measurements in pulsed magnetic fields exceeding 100 T.

cond-mat.supr-con↗

arXiv2002

Correlated charge detection for read-out of a solid state quantum computer

The single electron transistor (SET) is a prime candidate for reading out the final state of a qubit in a solid state quantum computer. Such a measurement requires the detection of sub-electron charge motion in the presence of random charging events. We present a detection scheme where the signals from two SETs are cross-correlated to suppress unwanted artifacts due to charge noise. This technique is demonstrated by using the two SETs to detect the charge state of two tunnel junction - coupled metal dots, thereby simulating charge transfer and readout in a two qubit system. These measurements indicate that for comparable buried dopant semiconductor architectures the minimum measurement time required to distinguish between the two charge states is of the order of 10 ns.

cond-mat.mes-hall↗

arXiv2002

Density dependent spin polarisation in ultra low-disorder quantum wires

There is controversy as to whether a one-dimensional (1D) electron gas can spin polarise in the absence of a magnetic field. Together with a simple model, we present conductance measurements on ultra low-disorder quantum wires supportive of a spin polarisation at B=0. A spin energy gap is indicated by the presence of a feature in the range 0.5 - 0.7 X 2e^2/h in conductance data. Importantly, it appears that the spin gap is not static but a function of the electron density. Data obtained using a bias spectroscopy technique are consistent with the spin gap widening further as the Fermi-level is increased.

cond-mat.str-el↗

arXiv2000

Many-body spin related phenomena in ultra-low-disorder quantum wires

Zero length quantum wires (or point contacts) exhibit unexplained conductance structure close to 0.7 X 2e^2/h in the absence of an applied magnetic field. We have studied the density- and temperature-dependent conductance of ultra-low-disorder GaAs/AlGaAs quantum wires with nominal lengths l=0 and 2 mu m, fabricated from structures free of the disorder associated with modulation doping. In a direct comparison we observe structure near 0.7 X 2e^2/h for l=0 whereas the l=2 mu m wires show structure evolving with increasing electron density to 0.5 X 2e^2/h in zero magnetic field, the value expected for an ideal spin-split sub-band. Our results suggest the dominant mechanism through which electrons interact can be strongly affected by the length of the 1D region.

cond-mat.str-el↗