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arXiv · 2111.10566

Anisotropic electronic phase transition in CrN epitaxial thin films

Qiao Jin·Jiali Zhao·Manuel Roldan·Shan Lin·Shengru Chen·Haitao Hong·Yiyan Fan·Dongke Rong·Haizhong Guo·Chen Ge·Can Wang·Jia-Ou Wang·Shanmin Wang·Kui-juan Jin·Er-Jia Guo
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Abstract

Electronic phase transition in strongly correlated materials is extremely sensitive to the dimensionality and crystallographic orientations. Transition metal nitrides (TMNs) are seldom investigated due to the difficulty in fabricating the high-quality and stoichiometric single crystals. In this letter, we report the epitaxial growth and electronic properties of CrN films on different-oriented NdGaO3 (NGO) substrates. Astonishingly, the CrN films grown on (110)-oriented NGO substrates maintain a metallic phase, whereas the CrN films grown on (010)-oriented NGO substrates are semiconducting. We attribute the unconventional electronic transition in the CrN films to the strongly correlation with epitaxial strain. The effective modulation of bandgap by the anisotropic strain triggers the metal-to-insulator transition consequently. This work provides a convenient approach to modify the electronic ground states of functional materials using anisotropic strain and further stimulates the investigations of TMNs.

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Qiao Jin, Jiali Zhao, Manuel Roldan, Shan Lin, Shengru Chen, Haitao Hong, Yiyan Fan, Dongke Rong, Haizhong Guo, Chen Ge, Can Wang, Jia-Ou Wang, Shanmin Wang, Kui-juan Jin, Er-Jia Guo. 2021-11-20. Anisotropic electronic phase transition in CrN epitaxial thin films. https://doi.org/10.1063/5.0079360

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