Braiding lateral morphotropic grain boundary in homogeneitic oxides

Shengru Chen; Qinghua Zhang; Dongke Rong; Yue Xu; Jinfeng Zhang; Fangfang Pei; He Bai; Yan-Xing Shang; Shan Lin; Qiao Jin; Haitao Hong; Can Wang; Wensheng Yan; Haizhong Guo; Tao Zhu; Lin Gu; Yu Gong; Qian Li; Lingfei Wang; Gang-Qin Liu; Kui-juan Jin; Er-Jia Guo

arXiv · 2207.06566

Braiding lateral morphotropic grain boundary in homogeneitic oxides

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Abstract

Interfaces formed by correlated oxides offer a critical avenue for discovering emergent phenomena and quantum states. However, the fabrication of oxide interfaces with variable crystallographic orientations and strain states integrated along a film plane is extremely challenge by conventional layer-by-layer stacking or self-assembling. Here, we report the creation of morphotropic grain boundaries (GBs) in laterally interconnected cobaltite homostructures. Single-crystalline substrates and suspended ultrathin freestanding membranes provide independent templates for coherent epitaxy and constraint on the growth orientation, resulting in seamless and atomically sharp GBs. Electronic states and magnetic behavior in hybrid structures are laterally modulated and isolated by GBs, enabling artificially engineered functionalities in the planar matrix. Our work offers a simple and scalable method for fabricating unprecedented innovative interfaces through controlled synthesis routes as well as provides a platform for exploring potential applications in neuromorphics, solid state batteries, and catalysis.

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Shengru Chen, Qinghua Zhang, Dongke Rong, Yue Xu, Jinfeng Zhang, Fangfang Pei, He Bai, Yan-Xing Shang, Shan Lin, Qiao Jin, Haitao Hong, Can Wang, Wensheng Yan, Haizhong Guo, Tao Zhu, Lin Gu, Yu Gong, Qian Li, Lingfei Wang, Gang-Qin Liu, Kui-juan Jin, Er-Jia Guo. 2022-07-14. Braiding lateral morphotropic grain boundary in homogeneitic oxides. https://arxiv.org/abs/2207.06566

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