arXiv subjects

Eric Mazur

Publications and source records attributed to Eric Mazur.

22 records · Page 2Linked to original sources

arXiv2016

Monolithic CMOS-compatible zero-index metamaterials

Zero-index materials exhibit exotic optical properties that can be utilized for integrated-optics applications. However, practical implementation requires compatibility with complementary metallic-oxide-semiconductor (CMOS) technologies. We demonstrate a CMOS-compatible zero-index metamaterial consisting of a square array of air holes in a 220-nm-thick silicon-on-insulator (SOI) wafer. This design is achieved through a Dirac-cone dispersion. The metamaterial is entirely composed of silicon and offers compatibility through low-aspect-ratio structures that can be simply fabricated in a standard device layer. This platform enables mass adoption and exploration of zero-index-based photonic devices at low cost and high fidelity.

physics.optics↗

arXiv2016

On-chip all-dielectric fabrication-tolerant zero-index metamaterials

Zero-index metamaterials (ZIMs) offer unprecedented ways to manipulate the flow of light, and are of interest for wide range of applications including optical cloaking, super-coupling, and unconventional phase-matching properties in nonlinear optics. Impedance-matched ZIMs can be obtained through a photonic Dirac-cone (PDC) dispersion induced by an accidental degeneracy of two linear bands - typically an electric monopole mode and a transverse magnetic dipole mode - at the center of the Brillouin zone. Consequently, PDC can only be achieved for a particular combination of geometric parameters of the metamaterial, and hence is sensitive to fabrication imperfections. These fabrication imperfections may limit the usefulness in practical applications. In this work we overcome this obstacle and demonstrate robust all-dielectric (AD) ZIM that supports PDC dispersion over wide parameter space. Our structure, consisting of an array of Si pillars on silica substrate, is fabricated in silicon-oninsulator (SOI) platform and operates at telecom wavelengths.

physics.optics↗

arXiv2011

Integrated TiO2 resonators for visible photonics

We demonstrate waveguide-coupled titanium dioxide (TiO2) racetrack resonators with loaded quality factors of 2x10^4 for the visible wavelengths. The structures were fabricated in sputtered TiO2 thin films on oxidized silicon substrates using standard top-down nanofabrication techniques, and passively probed in transmission measurements using a tunable red laser. Devices based on this material could serve as integrated optical elements as well as passive platforms for coupling to visible quantum emitters.

physics.optics↗

arXiv2011

Insulator-to-metal transition in sulfur-doped silicon

We observe an insulator-to-metal (I-M) transition in crystalline silicon doped with sulfur to non- equilibrium concentrations using ion implantation followed by pulsed laser melting and rapid resolidification. This I-M transition is due to a dopant known to produce only deep levels at equilibrium concentrations. Temperature-dependent conductivity and Hall effect measurements for temperatures T > 1.7 K both indicate that a transition from insulating to metallic conduction occurs at a sulfur concentration between 1.8 and 4.3 x 10^20 cm-3. Conduction in insulating samples is consistent with variable range hopping with a Coulomb gap. The capacity for deep states to effect metallic conduction by delocalization is the only known route to bulk intermediate band photovoltaics in silicon.

cond-mat.mtrl-sci↗