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Hai-Zhou Lu

Publications and source records attributed to Hai-Zhou Lu.

At least 37 records · Page 2Linked to original sources

Dispersions and magnetism of strain-induced pseudo Landau levels in Bernal-stacked bilayer graphene

Elastic strain can displace the massless Dirac fermions in monolayer graphene in a space-dependent fashion, similar to the effect of an external magnetic field, thus giving rise to Landau quantization. We here show that the strain-induced Landau quantization can also take place in Bernal-stacked bilayer graphene, where the low-energy excitations are massive rather than Dirac-like. The zigzag ribbon of Bernal-stacked bilayer graphene realizes a two-legged Su-Schrieffer-Heeger model with a domain wall, which coincides with the guiding center of the strain-induced pseudo Landau levels. We reduce the lattice model of the ribbon in the vicinity of the guiding center into an exactly solvable coupled Dirac model and analytically derive the dispersions of the strain-induced pseudo Landau levels. Remarkably, the zeroth and first pseudo Landau levels are dispersionless and sublattice-polarized. We elucidate that the interaction on these two pseudo Landau levels results in a global antiferromagnetic order. Our study extends the strain-induced Landau quantization to the massive excitations and indicates strain as a tuning knob of magnetism.

cond-mat.mes-hall↗

Quantum geometry in condensed matter

One of the most celebrated accomplishments of modern physics is the description of fundamental principles of nature in the language of geometry. As the motion of celestial bodies is governed by the geometry of spacetime, the motion of electrons in condensed matter can be characterized by the geometry of the Hilbert space of their wave functions. Such quantum geometry, comprising of Berry curvature and quantum metric, can thus exert profound influences on various properties of materials. The dipoles of both Berry curvature and quantum metric produce nonlinear transport. The quantum metric plays an important role in flat-band superconductors by enhancing the transition temperature. The uniformly distributed momentum-space quantum geometry stabilizes the fractional Chern insulators and results in the fractional quantum anomalous Hall effect. We here review in detail quantum geometry in condensed matter, paying close attention to its effects on nonlinear transport, superconductivity, and topological properties. Possible future research directions in this field are also envisaged.

cond-mat.mes-hall↗

Nonlinear Hall effect on a disordered lattice

The nonlinear Hall effect has recently attracted significant interest due to its potential as a promising spectral tool and device applications. A theory of the nonlinear Hall effect on a disordered lattice is a crucial step towards explorations in realistic devices, but has not been addressed. We study the nonlinear Hall response on a lattice, which allows us to introduce strong disorder numerically. We reveal a disorder-induced fluctuation of the Berry curvature that was not discovered in the previous perturbation theories. The fluctuating Berry curvature induces a fluctuation of the nonlinear Hall conductivity, which anomalously increases as the Fermi energy moves from the band edges to higher energies. More importantly, the fluctuation may explain those observations in the recent experiments. We also discover an "Anderson localization" of the nonlinear Hall effect. This work shows a territory of the nonlinear Hall effect yet to be explored.

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Subsystem symmetries, critical Bose surface, and immobile excitations in an extended compass model

We propose an extended compass model that hosts subsystem symmetries and has potential experimental relevance with 3d transition metal compounds. The subsystem symmetries strongly constrain the mobility of spin excitations and lead to profound consequences. At the quantum critical point we find the presence of "critical Bose surface" along the entire $k_x$ and $k_y$ axis. Across which we find a nodal-line spin liquid that undergoes nematic instability at low temperatures. In the ferro-quadrupole phase, we find that one excitation is immobile individually analogous to "fractons".

cond-mat.str-el↗

Intrinsic spin-orbit torque mechanism for deterministic all-electric switching of noncollinear antiferromagnets

Using a pure electric current to control kagome noncollinear antiferromagnets is promising in information storage and processing, but a full description is still lacking, in particular, on intrinsic (i.e., no external magnetic fields or external spin currents) spin-orbit torques. In this work, we self-consistently describe the relations among the electronic structure, magnetic structure, spin accumulations, and intrinsic spin-orbit torques, in the magnetic dynamics of a noncollinear antiferromagnet driven by a pure electric current. Our calculation can yield a critical current density comparable with those in the experiments, when considering the boost from the out-of-plane magnetic dynamics induced by the current-driven spin accumulation on individual magnetic moments. We stress the parity symmetry breaking in deterministic switching among magnetic structures. This work will be helpful for future applications of noncollinear antiferromagnets.

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The discovery of three-dimensional Van Hove singularity

Arising from the extreme/saddle point in electronic bands, Van Hove singularity (VHS) manifests divergent density of states (DOS) and induces various new states of matter such as unconventional superconductivity. VHS is believed to exist in one and two dimensions, but rarely found in three dimension (3D). Here, we report the discovery of 3D VHS in a topological magnet EuCd2As2 by magneto-infrared spectroscopy. External magnetic fields effectively control the exchange interaction in EuCd2As2, and shift 3D Weyl bands continuously, leading to the modification of Fermi velocity and energy dispersion. Above the critical field, the 3D VHS forms and is evidenced by the abrupt emergence of inter-band transitions, which can be quantitatively described by the minimal model of Weyl semimetals. Three additional optical transitions are further predicted theoretically and verified in magneto-near-infrared spectra. Our results pave the way to exploring VHS in 3D systems and uncovering the coordination between electronic correlation and the topological phase.

cond-mat.mtrl-sci↗

Quantized Hall conductance in 3D topological nodal-line semimetals without chiral symmetry

A quantized Hall conductance (not conductivity) in three dimensions has been searched for more than 30 years. Here we explore it in 3D topological nodal-line semimetals, by using a model capable of describing all essential physics of a semimetal, in particular the drumhead surface states protected by a momentum-dependent winding number. We develop a microscopic theory to demonstrate that the drumhead surface states can host quantized Hall conductance in this 3D material. We stress that breaking chiral symmetry is necessary for the quantum Hall effect of the drumhead surface states. The analytic theory can be verified numerically by the Kubo formula. There may also be trivial quantum Hall effects from the bulk states. We propose an experimental setup to distinguish the surface and bulk quantum Hall effects. The theory will be useful for ongoing explorations on nodal-line semimetals.

cond-mat.mes-hall↗

Phase transitions in intrinsic magnetic topological insulator with high-frequency pumping

In this work, we investigate the topological phase transitions in an effective model for a topological thin film with high-frequency pumping. In particular, our results show that the circularly polarized light can break the time-reversal symmetry and induce the quantum anomalous Hall insulator (QAHI) phase. Meanwhile, the bulk magnetic moment can also break the time-reversal symmetry. Therefore, it shows rich phase diagram by tunning the intensity of the light and the thickness of the thin film. Using the parameters fitted by experimental data, we give the topological phase diagram of the Cr-doped Bi$_{2}$Se$_{3}$ thin film, showing that by modulating the strength of the polarized optical field in an experimentally accessible range, there are four different phases: the normal insulator phase, the time-reversal-symmetry-broken quantum spin Hall insulator phase, and two different QAHI phases with opposite Chern numbers. Comparing with the non-doped Bi$_{2}$Se$_{3}$, it is found that the interplay between the light and bulk magnetic moment separates the two different QAHI phases with opposite Chern numbers. The results show that an intrinsic magnetic topological insulator with high-frequency pumping is an ideal platform for further exploring various topological phenomena with a spontaneously broken time-reversal symmetry.

cond-mat.mes-hall↗

Spinor-dominated magnetoresistance driven by the topological phase transition in $β$-Ag$_2$Se

A topological insulator is a quantum material which possesses conducting surfaces and an insulating bulk. Despite extensive researches on the properties of Dirac surface states, the characteristics of bulk states have remained largely unexplored. Here we report the observation of spinor-dominated magnetoresistance anomalies in the topological insulator $β$-Ag$_2$Se, induced by a magnetic-field-driven band topological phase transition. These anomalies are caused by intrinsic orthogonality in the wave-function spinors of the last Landau bands of the bulk states, in which backscattering is strictly forbidden during a band topological phase transition. This new type of longitudinal magnetoresistance, purely controlled by the wave-function spinors of the last Landau bands, highlights a unique signature of electrical transport around the band topological phase transition. With further reducing the quantum limit and gap size in $β$-Ag$_2$Se, our results may also suggest possible device applications based on this spinor-dominated mechanism and signify a rare case where topology enters the realm of magnetoresistance control.

cond-mat.mes-hall↗

Absence of the anomalous Hall effect in planar Hall experiments

Recently, the planar Hall effect has attracted tremendous interest. In particular, an in-plane magnetization can induce an anomalous planar Hall effect with a $2π/3$ period for hexagon-warped energy bands. This effect is similar to the anomalous Hall effect resulting from an out-of-plane magnetization. However, this anomalous planar Hall effect is absent in the planar Hall experiments. Here, we explain its absence, by performing a calculation that includes not only the Berry curvature mechanism as those in the previous theories, but also the disorder contributions. The conventional $π$-period planar Hall effect will occur if the mirror reflection symmetry is broken, which buries the anomalous one. We show that an in-plane strain can enhance the anomalous Hall conductivity and changes the period from $2π/3$ to $2π$. We propose a scheme to extract the hidden anomalous planar Hall conductivity from the experimental data. Our work will be helpful in detecting the anomalous planar Hall effect and could be generalized to understand mechanisms of the planar Hall effects in a wide range of materials.

cond-mat.mes-hall↗

Giant nonlocal edge conduction in the axion insulator state of MnBi2Te4

The recently discovered antiferromagnetic (AFM) topological insulator (TI) MnBi2Te4 represents a versatile material platform for exploring exotic topological quantum phenomena in nanoscale devices. It has been proposed that even-septuple-layer (even-SL) MnBi2Te4 can host helical hinge currents with unique nonlocal behavior, but experimental confirmation is still lacking. In this work, we report transport studies of exfoliated MnBi2Te4 flakes with varied thicknesses down to the few-nanometer regime. We observe giant nonlocal transport signals in even-SL devices when the system is in the axion insulator state but vanishingly small nonlocal signal in the odd-SL devices at the same magnetic field range. In conjunction with theoretical calculations, we demonstrate that the nonlocal transport is via the helical edge currents mainly distributed at the hinges between the side and top/bottom surfaces. The helical edge currents in the axion insulator state may find unique applications in topological quantum devices.

cond-mat.mtrl-sci↗

Impurity and dispersion effects on the linear magnetoresistance in the quantum limit

Magnetoresistance, that is, the change of the resistance with the magnetic field, is usually a quadratic function of the field strength. A linear magnetoresistance usually reveals extraordinary properties of a system. In the quantum limit where only the lowest Landau band is occupied, a quantum linear magnetoresistance was believed to be the signature of the Weyl fermions with 3D linear dispersion. Here, we comparatively investigate the quantum-limit magnetoresistance of systems with different band dispersions as well as different types of impurities. We find that the magnetoresistance can also be linear for the quadratic energy dispersion. We show that both longitudinal and transverse magnetoresistance can be linear if long-range-Gaussian-type impurities dominate, but Coulomb-type impurities can only induce linear transverse magnetoresistance. Moreover, we find a negative longitudinal magnetoresistance in massless Dirac fermions, regardless of the impurity type, as a result of the combined effect of the linear dispersion and the scattering mechanism. Our findings well explain some of the linear magnetoresistance observed in the experiments and provide insights to the understanding of quantum-limit magnetoresistance.

cond-mat.mes-hall↗

Chiral Anomaly Beyond Fermionic Paradigm

Two-dimensional magnets have manifested themselves as promising candidates for quantum devices. We here report that the edge and strain effects during the device fabrication with two-dimensional honeycomb ferromagnets such as CrX$_3$ (X=Cl, I, Br) and CrXTe$_3$ (X=Si, Ge) can be characterized by a (1+1)-dimensional magnon chiral anomaly beyond the fermionic paradigm. In the presence of zigzag edges, a pair of chiral bulk-edge magnon bands appear and cause an imbalance of left- and right-chirality magnons when subjected to nonuniform temperature or magnetic fields. In the presence of a uniaxial strain, the bulk Dirac magnons are broken into chiral magnon pseudo-Landau levels, resulting in a magnon chiral anomaly observable through a negative strain-resistivity of the magnetic dipole and heat. Our work demonstrates a chiral anomaly with (quasi)particles obeying non-fermionic statistics and will be instructive in understanding anomalous magnon transport.

cond-mat.mes-hall↗

Analytic solution to pseudo-Landau levels in strongly bent graphene nanoribbons

Nonuniform elastic strain is known to induce pseudo-Landau levels in Dirac materials. But these pseudo-Landau levels are hardly resolvable in an analytic fashion when the strain is strong, because of the emerging complicated space dependence in both the strain-modulated Fermi velocity and the strain-induced pseudomagnetic field. We analytically characterize the solution to the pseudo-Landau levels in experimentally accessible strongly bent graphene nanoribbons, by treating the effects of the nonuniform Fermi velocity and pseudomagnetic field on equal footing. The analytic solution is detectable through the angle-resolved photoemission spectroscopy (ARPES) and allows quantitative comparison between theories and various transport experiments, such as the Shubnikov-de Haas oscillation in the complete absence of magnetic fields and the negative strain-resistivity resulting from the valley anomaly. The analytic solution can be generalized to twisted two-dimensional materials and topological materials and will shed a new light on the related experimental explorations and straintronics applications.

cond-mat.mes-hall↗

Perpendicular in-plane negative magnetoresistance in ZrTe5

The unique band structure in topological materials frequently results in unusual magneto-transport phenomena, one of which is in-plane longitudinal negative magnetoresistance (NMR) with the magnetic field aligned parallel to the electrical current direction. This NMR is widely considered as a hallmark of chiral anomaly in topological materials. Here we report the observation of in-plane NMR in the topological material ZrTe5 when the in-plane magnetic field is both parallel and perpendicular to the current direction, revealing an unusual case of quantum transport beyond the chiral anomaly. We find that a general theoretical model, which considers the combined effect of Berry curvature and orbital moment, can quantitatively explain this in-plane NMR. Our results provide new insights into the understanding of in-plane NMR in topological materials.

cond-mat.mes-hall↗

Reply to Comment on Phys. Rev. Lett. 127, 176601 (2021) by Lee and Yang

In this Reply, we respond to the comments in Phys. Rev. Lett. 130, 219702 (2023) on our Phys. Rev. Lett. 127, 176601 (2021) ''Coulomb instabilities of a three-Dimensional higher-order topological insulator". We show the surface gap given in Phys. Rev. Lett. 130, 219701 (2023) is different from the expression derived by using the well-accepted approach and becomes divergent and singular at lower energies, thus is not suitable for depicting the phase transition from the 2nd-order to 1st-order topological insulator. We further show that a correct surface gap can describe the phase transition if the RG scheme treats the bulk gap as starting point. We justify our criteria in Phys. Rev. Lett. 127, 176601 (2021) for both the transitions from 2nd-order topological insulator to 1st-order topological insulator and normal insulator.

cond-mat.mes-hall↗

Magnetic topological transistor exploiting layer-selective transport

We propose a magnetic topological transistor based on MnBi$_{2}$Te$_{4}$, in which the "on" state (quantized conductance) and the "off" state (zero conductance) can be easily switched by changing the relative direction of two adjacent electric fields (parallel vs. antiparallel) applied within a two-terminal junction. We explain that the proposed magnetic topological transistor relies on a novel mechanism due to the interplay of topology, magnetism, and layer degrees of freedom in MnBi$_{2}$Te$_{4}$. Its performance depends substantially on film thickness and type of magnetic order. We show that "on" and "off" states of the transistor are robust against disorder due to the topological nature of the surface states. Our work opens an avenue for applications of layer-selective transport based on the topological van der Waals antiferromagnet MnBi$_{2}$Te$_{4}$.

cond-mat.mes-hall↗

Topological and disorder corrections to the transverse Wiedemann-Franz law and Mott relation in kagome magnets

The Wiedemann-Franz law and Mott relation are textbook paradigms on the ratios of the thermal and thermoelectric conductivities to electrical conductivity, respectively. Deviations from them usually reveal insights for intriguing phases of matter. The recent topological kagome magnets TbMn$_6$Sn$_6$ and Mn$_3$Ge show confusingly opposite derivations in the Hall measurement. We calculate the topological and disorder corrections to the Wiedemann-Franz law and Mott relation for the Hall responses in topological kagome magnets. The calculation indicates the dominance of the topological correction in the experiments. More importantly, we derive analytic correction formulas, which can universally capture the two opposite experiments with the chemical potential as the only parameter and will be a powerful guidance for future explorations on the magnetic topological matter.

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