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Jian Wang

Publications and source records attributed to Jian Wang.

At least 1,063 records · Page 59Linked to original sources

Photoinduced valley-polarized current of layered MoS2 by electric tuning

A photoinduced current of a layered MoS2-based transistor is studied from first-principles. Under the illumination of circular polarized light, a valley-polarized current is generated, which can be tuned by the gate voltage. For monolayer MoS2, the valley-polarized spin-up (down) electron current at K (K') points is induced by the right (left) circular polarized light. The valley polarization is found to reach +1.0 (-1.0) for the valley current that carried such a K (K') index. For bilayer MoS2, the spin-up (down) current can be induced at both K and K' valleys by the right (left) circular light. In contrast to monolayer MoS2, the photoinduced valley polarization shows asymmetric behavior upon reversal of the gate voltage. Our results show that the valley polarization of the photoinduced current can be modulated by the circular polarized light and the gate voltage. All the results can be well understood using a simple kp model.

cond-mat.mes-hall↗

Numerical study of parametric pumping current in mesoscopic systems in the presence of magnetic field

We numerically study the parametric pumped current when magnetic field is applied both in the adiabatic and non-adiabatic regimes. In particular, we investigate the nature of pumped current for systems with resonance as well as anti-resonance. It is found that in the adiabatic regime, the pumped current changes sign across the sharp resonance with long lifetime while the non-adiabatic pumped current at finite frequency does not. When the lifetime of resonant level is short, the behaviors of adiabatic and non-adiabatic pumped current are similar with sign changes. Our results show that at the energy where complete transmission occurs the adiabatic pumped current is zero while non-adiabatic pumped current is non-zero. Different from the resonant case, both adiabatic and non-adiabatic pumped current are zero at anti-resonance with complete reflection. We also investigate the pumped current when the other system parameters such as magnetic field, pumped frequency, and pumping potentials. Interesting behaviors are revealed. Finally, we study the symmetry relation of pumped current for several systems with different spatial symmetry upon reversal of magnetic field. Different from the previous theoretical prediction, we find that a system with general inversion symmetry can pump out a finite current in the adiabatic regime. At small magnetic field, the pumped current has an approximate relation I(B) \approx I(-B) both in adiabatic and non-adiabatic regimes.

cond-mat.mes-hall↗

Statistical properties of electrochemical capacitance in disordered mesoscopic capacitors

We numerically investigate the statistical properties of electrochemical capacitance in disordered two-dimensional mesoscopic capacitors. Based on the tight-binding Hamiltonian, the Green's function formalism is adopted to study the average electrochemical capacitance, its fluctuation as well as the distribution of capacitance of the disordered mesoscopic capacitors for three different ensembles: orthogonal (symmetry index β=1), unitary (β=2), and symplectic (β=4). It is found that the electrochemical capacitance in the disordered systems exhibits universal behavior. In the case of single conducting channel, the electrochemical capacitance follows a symmetric Gaussian distribution at weak disorders as expected from the random matrix theory. In the strongly disordered regime, the distribution is found to be a sharply one-sided form with a nearly-constant tail in the large capacitance region. This behavior is due to the existence of the necklace states in disordered systems, which is characterized by the multi-resonance that gives rise to a large density of states. In addition, it is found that the necklace state also enhances the fluctuation of electrochemical capacitance in the case of single conducting channel. When the number of conducting channels increases, the influence of necklace states becomes less important. For large number of conducting channels, the electrochemical capacitance fluctuation develops a plateau region in the strongly disordered regime. The plateau value is identified as universal electrochemical capacitance fluctuation, which is independent of system parameters such as disorder strength, Fermi energy, geometric capacitance, and system size. Importantly, the universal electrochemical capacitance fluctuation is the same for all three ensembles, suggesting a super-universal behavior.

cond-mat.mes-hall↗

Fully Differential Higgs Pair Production in Association With a $W$ Boson at Next-to-Next-to-Leading Order in QCD

To clarify the electroweak symmetry breaking mechanism, we need to probe the Higgs self-couplings, which can be measured in Higgs pair productions. The associated production with a vector boson is special due to a clear tag in the final state. We perform a fully differential next-to-next-to-leading-order calculation of the Higgs pair production in association with a $W$ boson at hadron colliders, and present numerical results at the 14 TeV LHC and a future 100 TeV hadron collider.

hep-ph↗

Electronic transport close to boundaries of semi-infinite graphene and their interfaces

Transport properties of 2D materials especially close to their boundary has received much attention after the successful fabrication of graphene and other fascinating materials afterwards. While most previous work is devoted to the conventional lead-device-lead setup with a finite size center area, this project investigates real space transport properties of infinite and semi-infinite 2D system under the framework of Non-equilibrium Green function. The commonly used method of calculating the Green function by inverting a matrix in the real space directly can be unstable in dealing with large systems as sometimes it gives non-converging result. Not to mention that the calculation error and time increase drastically with size of the system. By transforming from the real space to momentum space, we managed to replace the matrix inverting process by Brillouin Zone integral process which can be greatly simplified by the application of contour integral. Combining this methodology with Dyson equations, we are able to calculate transport properties of semi-infinite graphene close to its zigzag boundary and its combination with other material including s-wave superconductor. Interference pattern of transmitted and reflected electrons, graphene lensing effects and difference between Specular Andreev reflection and normal Andreev reflection are verified through our calculation.

cond-mat.mes-hall↗

Broadband frequency comb generation in aluminum nitride-on-sapphire microresonators

Development of chip-scale optical frequency comb with the coverage from ultra-violet (UV) to mid-infrared (MIR) wavelength is of great significance. To expand the comb spectrum into the challenging UV region, a material platform with high UV transparency is crucial. In this paper, crystalline aluminum nitride (AlN)-onsapphire film is demonstrated for efficient Kerr frequency comb generation. Near-infrared (NIR) comb with nearly octave-spanning coverage and low parametric threshold is achieved in continuous-wave pumped high-quality-factor AlN microring resonators. The competition between stimulated Raman scattering (SRS) and hyperparametric oscillation is investigated, along with broadband comb generation via Raman-assisted four-wave mixing (FWM). Thanks to its wide bandgap, excellent crystalline quality as well as intrinsic quadratic and cubic susceptibilities, AlN-on-sapphire platform should be appealing for integrated nonlinear optics from MIR to UV region.

physics.optics↗

Impurity-limited quantum transport variability in magnetic tunnel junctions

We report an extensive first-principles investigation of impurity-induced device-to-device variability of spin-polarized quantum tunneling through Fe/MgO/Fe magnetic tunnel junctions (MTJ). In particular, we calculated the tunnel magnetoresistance ratio (TMR) and the average values and variances of the currents and spin transfer torque (STT) of an interfacially doped Fe/MgO/Fe MTJ. Further, we predicted that N-doped MgO can improve the performance of a doped Fe/MgO/Fe MTJ. Our first-principles calculations of the fluctuations of the on/off currents and STT provide vital information for future predictions of the long-term reliability of spintronic devices, which is imperative for high-volume production.

physics.comp-ph↗

"WM"-Shaped Growth of GaN on Patterned Sapphire Substrates

In metal organic vapor phase epitaxy of GaN, the growth mode is sensitive to reactor temperature. In this study, V-pit-shaped GaN has been grown on normal c-plane cone-patterned sapphire substrate by decreasing the growth temperature of high-temperature-GaN to around 950 oC, which leads to the 3-dimensional growth of GaN. The so-called "WM" well describes the shape that the bottom of GaN V-pit is just right over the top of sapphire cone, and the regular arrangement of V-pits follows the patterns of sapphire substrate strictly. Two types of semipolar facets (1101) and (1122) expose on sidewalls of V-pits. Furthermore, by raising the growth temperature to 1000 oC, the growth mode of GaN can be transferred to 2-demonsional growth. Accordingly, the size of V-pits becomes smaller and the area of c-plane GaN becomes larger, while the total thickness of GaN keeps almost unchanged during this process. As long as the 2-demonsional growth lasts, the V-pits will disappear and only flat c-plane GaN remains. This means the area ratio of c-plane and semipolar plane GaN can be controlled by the duration time of 2-demonsional growth.

cond-mat.mtrl-sci↗

InGaN/GaN Multi-Quantum-Well and Light-Emitting Diode Based on V-pit-Shaped GaN Grown on Patterned Sapphire Substrate

V-pit-defects in GaN-based light-emitting diodes induced by dislocations are considered beneficial to electroluminescence because they relax the strain in InGaN quantum wells and also enhance the hole lateral injection through sidewall of V-pits. In this paper, regularly arranged V-pits are formed on c-plane GaN grown by metal organic vapor phase epitaxy on conventional c-plane cone-patterned sapphire substrates. The size of V-pits and area of flat GaN can be adjusted by changing growth temperature. Five pairs of InGaN/GaN multi-quantumwell and also a light-emitting diode structure are grown on this V-pit-shaped GaN. Two peaks around 410 nm and 450 nm appearing in both photoluminescence and cathodeluminescence spectra are from the semipolar InGaN/GaN multi-quantum-well on sidewalls of V-pits and cplane InGaN/GaN multi-quantum-well, respectively. In addition, dense bright spots can be observed on the surface of light-emitting diode when it works under small injection current, which are believed owing to the enhanced hole injection around V-pits.

cond-mat.mes-hall↗

Understanding different efficiency droop behaviors in InGaN-based near-UV, blue and green light-emitting diodes through differential carrier lifetime measurements

Efficiency droop effect under high injection in GaN-based light emitting diodes (LEDs) strongly depends on wavelength, which is still not well understood. In this paper, through differential carrier lifetime measurements on commercialized near-UV, blue, and green LEDs, their different efficiency droop behaviors are attributed to different carrier lifetimes, which are prolonged as wavelength increases. This relationship between carrier lifetime and indium composition of InGaN quantum well is believed owing to the polarization-induced quantum confinement Stark effect. Long carrier lifetime not only increases the probability of carrier leakage, but also results in high carrier concentration in quantum well. In other words, under the same current density, the carrier concentration in active region in near-UV LED is the lowest while that in green one is the highest. If considering the efficiency droop depending on carrier concentration, the behaviors of LEDs with different wavelengths do not show any abnormality. The reason why the efficiency droop becomes more serious under lower temperature can be also explained by this model as well. Based on this result, the possible solutions to conquer efficiency droop are discussed. It seems that decreasing the carrier lifetime is a fundamental approach to solve the problem.

cond-mat.mtrl-sci↗

Enabling photoemission electron microscopy in liquids via graphene-capped microchannel arrays

Photoelectron emission microscopy PEEM is a powerful tool to spectroscopically image dynamic surface processes at the nanoscale but is traditionally limited to ultra high or moderate vacuum conditions. Here, we develop a novel grapheme capped multichannel array sample platform that extends the capabilities of photoelectron spectromicroscopy to routine liquid and atmospheric pressure studies with standard PEEM setups. Using this platform, we show that graphene has only a minor influence on the electronic structure of water in the first few layers and thus will allow for the examination of minimally perturbed aqueous phase interfacial dynamics. Analogous to microarray screening technology in biomedical research, our platform is highly suitable for applications in tandem with large-scale data mining, pattern recognition, and combinatorial methods for spectro temporal and spatiotemporal analyses at solid liquid interfaces. Using Bayesian linear unmixing algorithm, we were able to discriminate between different X-ray induced water radiolysis scenarios and observe a metastable wetting intermediate water layer during the late stages of bubble formationformation

cond-mat.mtrl-sci↗

Soft Phonon Modes and Diffuse Scattering in Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 Relaxor Ferroelectrics

Single crystals of a ternary relaxor ferroelectric system, 0.29Pb(In1/2Nb1/2)O3-0.45Pb(Mg1/3Nb2/3)O3-0.26PbTiO3, have been studied using triple-axis based elastic and inelastic neutron scattering. Elastic diffuse scattering confirms the presence of polar nano-regions (PNRs) in this system. The PNRs emerge at the Burns temperature, TB = 630 K and then grow continuously in population and correlation size as the crystal cools down to 100 K. At 300 K, characteristic 'butterfly' and ellipsoid shaped diffuse scattering patterns are observed on the HK0 reciprocal space plane. Electrical poling along the [110] direction produces a marked asymmetry in the diffuse scattering patterns, with the parallel-to-the-field components enhanced while the perpendicular-to-the-field components suppressed. Several low energy phonon branches along the [001] and [111] directions were studied. Most significantly, the PNR-acoustic phonon coupling is confirmed for the [110] transverse acoustic (TA) phonons polarized along the [1-10] real space direction and the [100] TA phonons. This coupling appears to be anisotropic and correlated with the distribution of PNRs, and also affected by the relative length scales of the PNRs and phonon wave vectors. The well-known 'waterfall' phenomenon is observed on the [001] and [110] transverse optical (TO) branches, near the zone center. The optical phonon measurements also reveal a lowest-energy, zone center soft TO mode, whose squared phonon energy increase linearly with decreasing temperature below the TB.

cond-mat.mtrl-sci↗

Some properties of Hamiltonian homeomorphisms on closed aspherical surfaces

On closed symplectically aspherical manifolds, Schwarz proved a classical result that the action function of a nontrivial Hamiltonian diffeomorphism is not constant by using Floer homology. In this article, we generalize Schwarz's theorem to the $C^0$-case on closed aspherical surfaces. Our methods involve the theory of transverse foliations for dynamical systems of surfaces inspired by Le Calvez and its recent progresses. As an application, we prove that the contractible fixed points set (and consequently the fixed points set) of a nontrivial Hamiltonian homeomorphism is not connected. Furthermore, we obtain that the growth of the action width of a Hamiltonian homeomorphism increases at least linearly, and that the group of Hamiltonian homeomorphisms of $\mathbb{T}^2$ and the group of area preserving homeomorphisms isotopic to the identity of $Σ_g$ ($g>1$) are torsion free, where $Σ_g$ is a closed orientated surface with genus $g$. Finally, we will show how the $C^1$-Zimmer's conjecture on surfaces deduces from $C^0$-Schwarz's theorem.

math.SG↗

Experimental Trapped-ion Quantum Simulation of the Kibble-Zurek dynamics in momentum space

The Kibble-Zurek mechanism is the paradigm to account for the nonadiabatic dynamics of a system across a continuous phase transition. Its study in the quantum regime is hindered by the requisite of ground state cooling. We report the experimental quantum simulation of critical dynamics in the transverse-field Ising model by a set of Landau-Zener crossings in pseudo-momentum space, that can be probed with high accuracy using a single trapped ion. We test the Kibble-Zurek mechanism in the quantum regime in the momentum space and find the measured scaling of excitations is in accordance with the theoretical prediction.

quant-ph↗

Continuous-wave Raman Lasing in Aluminum Nitride Microresonators

We report the first investigation on continuous-wave Raman lasing in high-quality-factor aluminum nitride (AlN) microring resonators. Although wurtzite AlN is known to exhibit six Raman-active phonons, single-mode Raman lasing with low threshold and high slope efficiency is demonstrated. Selective excitation of A$_1^\mathrm{TO}$ and E$_2^\mathrm{high}$ phonons with Raman shifts of $\sim$612 and 660 cm$^{-1}$ is observed by adjusting the polarization of the pump light. A theoretical analysis of Raman scattering efficiency within ${c}$-plane (0001) of AlN is carried out to help account for the observed lasing behavior. Bidirectional lasing is experimentally confirmed as a result of symmetric Raman gain in micro-scale waveguides. Furthermore, second-order Raman lasing with unparalleled output power of $\sim$11.3 mW is obtained, which offers the capability to yield higher order Raman lasers for mid-infrared applications.

physics.optics↗

Experimental Quantum Digital Signature over 102 km

Quantum digital signature (QDS) is an approach to guarantee the nonrepudiation, unforgeability and transferability of a signature with the information-theoretical security. All previous experimental realizations of QDS relied on an unrealistic assumption of secure channels and the longest distance is only several kilometers. Here, we have experimentally demonstrated a recently proposed QDS protocol without any secure channel. Exploiting the decoy state modulation, we have successfully signed one bit message through up to 102 km optical fiber. Furthermore, we continuously run the system to sign the longer message "USTC" with 32 bit at the distance of 51 km. Our results pave the way towards the practical application of QDS.

quant-ph↗

A PMT-like high gain avalanche photodiode based on GaN/AlN periodical stacked structure

Avalanche photodiode (APD) has been intensively investigated as a promising candidate to replace photomultiplier tubes (PMT) for weak light detection. However, in conventional APDs, a large portion of carrier energy drawn from the electric field is thermalized, and the multiplication efficiencies of electron and hole are low and close. In order to achieve high gain, the device should work under breakdown bias, where carrier multiplication proceeds bi-directionally to form a positive feedback multiplication circle. However, breakdown is hard to control, in practice, APDs should work under Geiger mode as a compromise between sustainable detection and high gain. The complexity of system seriously restricts the application. Here, we demonstrate an avalanche photodiode holding high gain without breakdown, which means no quenching circuit is needed for sustainable detection. The device is based on a GaN/AlN periodically-stacked-structure (PSS), wherein electron holds much higher efficiency than hole to draw energy from the electric field, and avalanche happens uni-directionally with high efficiency. and a recorded high gain (10^4) tested under constant bias is obtained in a prototype device, wherein the stable gain can be determined by the periodicity of the GaN/AlN PSS. This work not only brings a new light into avalanche multiplication mechanism, but also paves a technological path with high commercial value to realize highly sensitive avalanche devices working under constant bias like PMT.

physics.ins-det↗

Nonminimal De Rham-Hodge Operators and Non-commutative Residue

In this paper, we get a Kastler-Kalau-Walze type theorem associated to nonminimal de Rham-Hodge operators on compact manifolds with boundary. We give two kinds of operator-theoretic explanations of the gravitational action in the case of four dimensional compact manifolds with flat boundary.

math.DG↗