arXiv subjects

K. S. Novoselov

Publications and source records attributed to K. S. Novoselov.

At least 163 records · Page 9Linked to original sources

arXiv2007

Graphene: new bridge between condensed matter physics and quantum electrodynamics

Graphene is the first example of truly two-dimensional crystals - it's just one layer of carbon atoms. It turns out to be a gapless semiconductor with unique electronic properties resulting from the fact that charge carriers in graphene demonstrate charge-conjugation symmetry between electrons and holes and possess an internal degree of freedom similar to ``chirality'' for ultrarelativistic elementary particles. It provides unexpected bridge between condensed matter physics and quantum electrodynamics (QED). In particular, the relativistic Zitterbewegung leads to the minimum conductivity of order of conductance quantum $e^2/h$ in the limit of zero doping; the concept of Klein paradox (tunneling of relativistic particles) provides an essential insight into electron propagation through potential barriers; vacuum polarization around charge impurities is essential for understanding of high electron mobility in graphene; index theorem explains anomalous quantum Hall effect.

cond-mat.mes-hall↗

arXiv2007

Rayleigh Imaging of Graphene and Graphene Layers

We investigate graphene and graphene layers on different substrates by monochromatic and white-light confocal Rayleigh scattering microscopy. The image contrast depends sensitively on the dielectric properties of the sample as well as the substrate geometry and can be described quantitatively using the complex refractive index of bulk graphite. For few layers (<6) the monochromatic contrast increases linearly with thickness: the samples behave as a superposition of single sheets which act as independent two dimensional electron gases. Thus, Rayleigh imaging is a general, simple and quick tool to identify graphene layers, that is readily combined with Raman scattering, which provides structural identification.

cond-mat.mtrl-sci↗

arXiv2007

Molecular Doping of Graphene

Graphene, a one-atom thick zero gap semiconductor [1, 2], has been attracting an increasing interest due to its remarkable physical properties ranging from an electron spectrum resembling relativistic dynamics [3-12] to ballistic transport under ambient conditions [1-4]. The latter makes graphene a promising material for future electronics and the recently demonstrated possibility of chemical doping without significant change in mobility has improved graphene's prospects further [13]. However, to find optimal dopants and, more generally, to progress towards graphene-based electronics requires understanding the physical mechanism behind the chemical doping, which has been lacking so far. Here, we present the first joint experimental and theoretical investigation of adsorbates on graphene. We elucidate a general relation between the doping strength and whether or not adsorbates have a magnetic moment: The paramagnetic single NO2 molecule is found to be a strong acceptor, whereas its diamagnetic dimer N2O4 causes only weak doping. This effect is related to the peculiar density of states of graphene, which provides an ideal situation for model studies of doping effects in semiconductors. Furthermore, we explain recent results on its "chemical sensor" properties, in particular, the possibility to detect a single NO2 molecule [13].

cond-mat.mes-hall↗

arXiv2007

On the roughness of single- and bi-layer graphene membranes

We present a detailed transmission electron microscopy and electron diffraction study of the thinnest possible membrane, a single layer of carbon atoms suspended in vacuum and attached only at its edges. Membranes consisting of two graphene layers are also reported. We find that the membranes exhibit an apparently random spontaneous curvature that is strongest in single-layer membranes. A direct visualization of the roughness is presented for two-layer membranes where we used the variation of diffracted intensities with the local orientation of the membrane.

cond-mat.mes-hall↗

arXiv2007

The rise of graphene

Graphene is a rapidly rising star on the horizon of materials science and condensed matter physics. This strictly two-dimensional material exhibits exceptionally high crystal and electronic quality and, despite its short history, has already revealed a cornucopia of new physics and potential applications, which are briefly discussed here. Whereas one can be certain of the realness of applications only when commercial products appear, graphene no longer requires any further proof of its importance in terms of fundamental physics. Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed matter physics, where quantum relativistic phenomena, some of which are unobservable in high energy physics, can now be mimicked and tested in table-top experiments. More generally, graphene represents a conceptually new class of materials that are only one atom thick and, on this basis, offers new inroads into low-dimensional physics that has never ceased to surprise and continues to provide a fertile ground for applications.

cond-mat.mtrl-sci↗

arXiv2007

Room-Temperature Quantum Hall Effect in Graphene

The quantum Hall effect (QHE), one example of a quantum phenomenon that occur on a truly macroscopic scale, has been attracting intense interest since its discovery in 1980 and has helped elucidate many important aspects of quantum physics. It has also led to the establishment of a new metrological standard, the resistance quantum. Disappointingly, however, the QHE could only have been observed at liquid-helium temperatures. Here, we show that in graphene - a single atomic layer of carbon - the QHE can reliably be measured even at room temperature, which is not only surprising and inspirational but also promises QHE resistance standards becoming available to a broader community, outside a few national institutions.

cond-mat.mes-hall↗

arXiv2007

The structure of suspended graphene sheets

The recent discovery of graphene has sparked significant interest, which has so far been focused on the peculiar electronic structure of this material, in which charge carriers mimic massless relativistic particle. However, the structure of graphene - a single layer of carbon atoms densely packed in a honeycomb crystal lattice - is also puzzling. On the one hand, graphene appears to be a strictly two-dimensional (2D) material and exhibits such a high crystal quality that electrons can travel submicron distances without scattering. On the other hand, perfect 2D crystals cannot exist in the free state, according to both theory and experiment. This is often reconciled by the fact that all graphene structures studied so far were an integral part of larger 3D structures, either supported by a bulk substrate or embedded in a 3D matrix. Here we report individual graphene sheets freely suspended on a microfabricated scaffold in vacuum or air. These membranes are only one atom thick and still display a long-range crystalline order. However, our studies by transmission electron microscopy (TEM) have revealed that suspended graphene sheets are not perfectly flat but exhibit intrinsic microscopic roughening such that the surface normal varies by several degrees and out-of-plane deformations reach 1 nm. The atomically-thin single-crystal membranes offer an ample scope for fundamental research and new technologies whereas the observed corrugations in the third dimension may shed light on subtle reasons behind the stability of 2D crystals.

cond-mat.mes-hall↗

arXiv2006

Room temperature tunneling anisotropic and collinear magnetoresistance

We report a room temperature tunneling anisotropic magnetoresistance in Co/Al2O3/NiFe junctions containing magnetic electrodes oxidized prior to forming the Al2O3 layer. A significant change in a tunnel magnetoresistance is observed when the layer magnetizations are rotated collinearly in the junction plane by an applied external field. The angular dependence of the tunneling anisotropic magnetoresistance could be explained by the presence of an antiferromagnetic oxide layer formed within the barrier.

cond-mat.other↗

arXiv2006

Chiral tunneling and the Klein paradox in graphene

The so-called Klein paradox - unimpeded penetration of relativistic particles through high and wide potential barriers - is one of the most exotic and counterintuitive consequences of quantum electrodynamics (QED). The phenomenon is discussed in many contexts in particle, nuclear and astro- physics but direct tests of the Klein paradox using elementary particles have so far proved impossible. Here we show that the effect can be tested in a conceptually simple condensed-matter experiment by using electrostatic barriers in single- and bi-layer graphene. Due to the chiral nature of their quasiparticles, quantum tunneling in these materials becomes highly anisotropic, qualitatively different from the case of normal, nonrelativistic electrons. Massless Dirac fermions in graphene allow a close realization of Klein's gedanken experiment whereas massive chiral fermions in bilayer graphene offer an interesting complementary system that elucidates the basic physics involved.

cond-mat.mes-hall↗

arXiv2006

Strong suppression of weak (anti)localization in graphene

Low-field magnetoresistance is ubiquitous in low-dimensional metallic systems with high resistivity and well understood as arising due to quantum interference on self-intersecting diffusive trajectories. We have found that in graphene this weak-localization magnetoresistance is strongly suppressed and, in some cases, completely absent. This unexpected observation is attributed to mesoscopic corrugations of graphene sheets which cause a dephasing effect similar to that of a random magnetic field.

cond-mat.mes-hall↗

arXiv2006

The Raman Fingerprint of Graphene

Graphene is the two-dimensional (2d) building block for carbon allotropes of every other dimensionality. It can be stacked into 3d graphite, rolled into 1d nanotubes, or wrapped into 0d fullerenes. Its recent discovery in free state has finally provided the possibility to study experimentally its electronic and phonon properties. Here we show that graphene's electronic structure is uniquely captured in its Raman spectrum that clearly evolves with increasing number of layers. Raman fingerprints for single-, bi- and few-layer graphene reflect changes in the electronic structure and electron-phonon interactions and allow unambiguous, high-throughput, non-destructive identification of graphene layers, which is critically lacking in this emerging research area.

cond-mat.mtrl-sci↗

arXiv2006

Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene

There are known two distinct types of the integer quantum Hall effect. One is the conventional quantum Hall effect, characteristic of two-dimensional semiconductor systems, and the other is its relativistic counterpart recently observed in graphene, where charge carriers mimic Dirac fermions characterized by Berry's phase pi, which results in a shifted positions of Hall plateaus. Here we report a third type of the integer quantum Hall effect. Charge carriers in bilayer graphene have a parabolic energy spectrum but are chiral and exhibit Berry's phase 2pi affecting their quantum dynamics. The Landau quantization of these fermions results in plateaus in Hall conductivity at standard integer positions but the last (zero-level) plateau is missing. The zero-level anomaly is accompanied by metallic conductivity in the limit of low concentrations and high magnetic fields, in stark contrast to the conventional, insulating behavior in this regime. The revealed chiral fermions have no known analogues and present an intriguing case for quantum-mechanical studies.

cond-mat.mes-hall↗

arXiv2005

Two-Dimensional Gas of Massless Dirac Fermions in Graphene

Electronic properties of materials are commonly described by quasiparticles that behave as non-relativistic electrons with a finite mass and obey the Schroedinger equation. Here we report a condensed matter system where electron transport is essentially governed by the Dirac equation and charge carriers mimic relativistic particles with zero mass and an effective "speed of light" c* ~10^6m/s. Our studies of graphene - a single atomic layer of carbon - have revealed a variety of unusual phenomena characteristic of two-dimensional (2D) Dirac fermions. In particular, we have observed that a) the integer quantum Hall effect in graphene is anomalous in that it occurs at half-integer filling factors; b) graphene's conductivity never falls below a minimum value corresponding to the conductance quantum e^2/h, even when carrier concentrations tend to zero; c) the cyclotron mass m of massless carriers with energy E in graphene is described by equation E =mc*^2; and d) Shubnikov-de Haas oscillations in graphene exhibit a phase shift of pi due to Berry's phase.

cond-mat.mes-hall↗

arXiv2005

Two Dimensional Electron and Hole Gases at the Surface of Graphite

We report high-quality two-dimensional (2D) electron and hole gases induced at the surface of graphite by the electric field effect. The 2D carriers reside within a few near-surface atomic layers and exhibit mobilities up to 15,000 and 60,000 cm2/Vs at room and liquid-helium temperatures, respectively. The mobilities imply ballistic transport at micron scale. Pronounced Shubnikov-de Haas oscillations reveal the existence of two types of carries in both 2D electron and hole gases.

cond-mat.mes-hall↗

arXiv2005

Two Dimensional Atomic Crystals

We report free-standing atomic crystals that are strictly 2D and can be viewed as individual atomic planes pulled out of bulk crystals or as unrolled single-wall nanotubes. By using micromechanical cleavage, we have prepared and studied a variety of 2D crystals, including single layers of boron nitride, graphite, several dichalcogenides and complex oxides. These atomically-thin sheets (essentially gigantic 2D molecules unprotected from the immediate environment) are stable under ambient conditions, exhibit high crystal quality and are continuous on a macroscopic scale.

cond-mat.mtrl-sci↗

arXiv2004

Room-temperature electric field effect and carrier-type inversion in graphene films

The ability to control electronic properties of a material by externally applied voltage is at the heart of modern electronics. In many cases, it is the so-called electric field effect that allows one to vary the carrier concentration in a semiconductor device and, consequently, change an electric current through it. As the semiconductor industry is nearing the limits of performance improvements for the current technologies dominated by silicon, there is a constant search for new, non-traditional materials whose properties can be controlled by electric field. Most notable examples of such materials developed recently are organic conductors [1], oxides near a superconducting or magnetic phase transition [2] and carbon nanotubes [3-5]. Here, we describe another system of this kind - thin monocrystalline films of graphite - which exhibits a pronounced electric field effect, such that carriers in the conductive channel can be turned into either electrons or holes. The films remain metallic, continuous and of high quality down to a few atomic layers in thickness. The demonstrated ease of preparing such films of nearly macroscopic sizes and of their processing by standard microfabrication techniques, combined with submicron-scale ballistic transport even at room temperature, offer a new two-dimensional system controllable by electric-field doping and provide a realistic promise of device applications.

cond-mat.mes-hall↗

arXiv2004

Electric Field Effect in Atomically Thin Carbon Films

We report a naturally-occurring two-dimensional material (graphene that can be viewed as a gigantic flat fullerene molecule, describe its electronic properties and demonstrate all-metallic field-effect transistor, which uniquely exhibits ballistic transport at submicron distances even at room temperature.

cond-mat.mtrl-sci↗

arXiv2004

Long-range nonlocal flow of vortices in narrow superconducting channels

We report a new nonlocal effect in vortex matter, where an electric current confined to a small region of a long and sufficiently narrow superconducting wire causes vortex flow at distances hundreds of inter-vortex separations away. The observed remote traffic of vortices is attributed to a very efficient transfer of a local strain through the one-dimensional vortex lattice, even in the presence of disorder. We also observe mesoscopic fluctuations in the nonlocal vortex flow, which arise due to "traffic jams" when vortex arrangements do not match a local geometry of a superconducting channel.

cond-mat.supr-con↗