arXiv subjects

Karsten Hansen

Publications and source records attributed to Karsten Hansen.

18 recordsLinked to original sources

arXiv2025

Characterization of the H2M Monolithic CMOS Sensor

The H2M (Hybrid-to-Monolithic) is a monolithic pixel sensor manufactured in a modified \SI{65}{\nano\meter}~CMOS imaging process with a small collection electrode. Its design addresses the challenges of porting an existing hybrid pixel detector architecture into a monolithic chip, using a digital-on-top design methodology, and developing a compact digital cell library. Each square pixel integrates an analog front-end and digital pulse processing with an 8-bit counter within a \SI{35}{\micro\meter}~pitch. This contribution presents the performance of H2M based on laboratory and test beam measurements, including a comparison with analog front-end simulations in terms of gain and noise. A particular emphasis is placed on backside thinning in order to reduce material budget, down to a total chip thickness of \SI{21}{\micro\meter} for which no degradation in MIP detection performance is observed. For all investigated samples, a MIP detection efficiency above \SI{99}{\%} is achieved below a threshold of approximately 205 electrons. At this threshold, the fake-hit rate corresponds to a matrix occupancy of fewer than one pixel per the \SI{500}{\nano\second}~frame. Measurements reveal a non-uniform in-pixel response, attributed to the formation of local potential wells in regions with low electric field. A simulation flow combining technology computer-aided design, Monte Carlo, and circuit simulations is used to investigate and describe this behavior, and is applied to develop mitigation strategies for future chip submissions with similar features.

physics.ins-det↗

arXiv2025

Timing performance of a digital SiPM prototype measured with a picosecond injection laser

The DESY digital silicon photomultiplier (dSiPM) is a monolithic detector based on complementary metal-oxide-semiconductor (CMOS) single-photon avalanche diodes (SPADs) and features a fully digital readout. The dSiPM prototype was characterized using a picosecond injection laser. Different contributions to the time resolution from both SPADs and digitization electronics are quantified. The dSiPM achieves a temporal resolution of approximately 50 ps under optimal conditions, while localized charge deposition with the laser revealed in-pixel variations of the time resolution linked to the SPAD layout. Combining fast timing with a pixelated readout, the device is a promising candidate for 4D-tracking detectors and other precision timing applications.

physics.ins-det↗

arXiv2025

Impact of the circuit layout on the charge collection in a monolithic pixel sensor

CERN's strategic R&D programme on technologies for future experiments recently started investigating the TPSCo 65nm ISC CMOS imaging process for monolithic active pixels sensors for application in high energy physics. In collaboration with the ALICE experiment and other institutes, several prototypes demonstrated excellent performance, qualifying the technology. The Hybrid-to-Monolithic (H2M), a new test-chip produced in the same process but with a larger pixel pitch than previous prototypes, exhibits an unexpected asymmetric efficiency pattern. This contribution describes a simulation procedure combining TCAD, Monte Carlo and circuit simulations to model and understand this effect. It proved able to reproduce measurement results and attribute the asymmetric efficiency drop to a slow charge collection due to low amplitude potential wells created by the circuitry layout and impacting efficiency via ballistic deficit.

physics.ins-det↗

arXiv2025

The H2M Monolithic Active Pixel Sensor -- characterizing non-uniform in-pixel response in a 65 nm CMOS imaging technology

The high energy physics community recently gained access to the TPSCo 65 nm ISC (Image Sensor CMOS), which enables a higher in-pixel logic density in monolithic active pixel sensors (MAPS) compared to processes with larger feature sizes. To explore this novel technology, the Hybrid-to-Monolithic (H2M) test chip has been designed and manufactured. The design followed a digital-on-top design workflow and ports a hybrid pixel-detector architecture, with digital pulse processing in each pixel, into a monolithic chip. The chip matrix consists of 64$\times$16 square pixels with a size of 35$\times$35 um2, and a total active area of approximately 1.25 um2. The chip has been successfully integrated into the Caribou DAQ system. It is fully functional, and the measured threshold dispersion and noise agree with the expectation from front-end simulations. However, a non-uniform in-pixel response related to the size and location of the n-wells in the analog circuitry has been observed in test beam measurements and will be discussed in this contribution. This asymmetry in the pixel response, enhanced by the 35 um pixel pitch - larger than in other prototypes - and certain features of the readout circuit, has not been observed in prototypes with smaller pixel pitches in this technology.

physics.ins-det↗

arXiv2025

Transient studies using a TCAD and Allpix Squared combination approach

The goal of the TANGERINE project is to develop the next generation of monolithic silicon pixel detectors using a 65 nm CMOS imaging process, which offers a higher logic density and overall lower power consumption compared to previously used processes. A combination of Technology Computer-Aided Design (TCAD) and Monte Carlo (MC) simulations is used to understand the physical processes within the sensing element and thus the overall performance of the pixel detector. The response of the sensors can then be tested in laboratory and test beam facilities and compared to simulation results. Transient simulations allow for studying the response of the sensor as a function of time, such as the signal produced after a charged particle passes through the sensor. The study of these signals is important to understand the magnitude and timing of the response from the sensors and improve upon them. While TCAD simulations are accurate, the time required to produce a single pulse is large compared to a combination of MC and TCAD simulations. In this work, a validation of the transient simulation approach and studies on charge collection are presented.

physics.ins-det↗

arXiv2024

Test Beam Characterization of a Digital Silicon Photomultiplier

Conventional silicon photomultipliers (SiPMs) are well established as light detectors with single-photon-detection capability and used throughout high energy physics, medical, and commercial applications. The possibility to produce single photon avalanche diodes (SPADs) in commercial CMOS processes creates the opportunity to combine a matrix of SPADs and an application-specific integrated circuit in the same die. The potential of such digital SiPMs (dSiPMs) is still being explored, while it already is an established technology in certain applications, like light detection and ranging (LiDAR). A prototype dSiPM, produced in the LFoundry 150-nm CMOS technology, was designed and tested at DESY. The dSiPM central part is a matrix of 32 by 32 pixels. Each pixel contains four SPADs, a digital front-end, and has an area of 69.6 $\times$ 76 um$^2$. The chip has four time-to-digital converters and includes further circuitry for data serialization and data links. This work focuses on the characterization of the prototype in an electron beam at the DESY II Test Beam facility, to study its capability as a tracking and timing detector for minimum ionizing particles (MIPs). The MIP detection efficiency is found to be dominated by the fill factor and on the order of 31 %. The position of the impinging MIPs can be measured with a precision of about 20 um, and the time of the interaction can be measured with a precision better than 50 ps for about 85 % of the detected events. In addition, laboratory studies on the breakdown voltage, dark count rate, and crosstalk probability, as well as the experimental methods required for the characterization of such a sensor type in a particle beam are presented.

physics.ins-det↗

arXiv2024

Analysis of long-lived effects in high-repetition-rate stroboscopic transient X-ray absorption experiments on thin films

Time-resolved X-ray absorption spectroscopy (tr-XAS) has been shown to be a versatile measurement technique for investigating non-equilibrium dynamics. Novel X-ray free electron laser (XFEL) facilities like the European XFEL offer increased repetition rates for stroboscopic XAS experiments through a burst operation mode, which enables measurements with up to 4.5 MHz. These higher repetition rates lead to higher data acquisition rates but can also introduce long-lived excitations that persist and thus build up during each burst. Here, we report on such long-lived effects in Ni and NiO thin film samples that were measured at the European XFEL. We disentangle the long-lived excitations from the initial pump-induced change and perform a detailed modelling-based analysis of how they modify transient X-ray spectra. As a result, we link the long-lived effects in Ni to a local temperature increase, as well as the effects in NiO to excited charge carrier trapping through polaron formation. In addition, we present possible correction methods, as well as discuss ways in which the effects of these long-lived excitations could be minimized for future time-resolved X-ray absorption spectroscopy measurements.

cond-mat.mtrl-sci↗

arXiv2024

4D-Tracking with Digital SiPMs

Silicon Photomultipliers (SiPMs) are the state-of-the-art technology in single-photon detection with solid-state detectors. Single Photon Avalanche Diodes (SPADs), the key element of SiPMs, can now be manufactured in CMOS processes, facilitating the integration of a SPAD array into custom monolithic ASICs. This allows implementing features such as signal digitization, masking, full hit-map readout, noise suppression, and photon counting in a monolithic CMOS chip. The complexity of the off-chip readout chain is thereby reduced. These new features allow new applications for digital SiPMs, such as 4D-tracking of charged particles, where spatial resolutions of the order of $10 \mu m$ and timestamping with time resolutions of a few tens of ps are required. A prototype of a digital SiPM was designed at DESY using the LFoundry $150 nm$ CMOS technology. Various studies were carried out in the laboratory and at the DESY II test-beam facility to evaluate the sensor performance in Minimum Ionizing Particles (MIPs) detection. The direct detection of charged particles was investigated for bare prototypes and assemblies coupling dSiPMs and thin LYSO crystals. Spatial resolution $\sim20 \mu m$ and a full-system time resolution of $\sim50 ps$ are measured using bare dSiPMs in direct MIP detection. Efficiency $>99.5 \%$, low noise rate and time resolution $<1 ns$ can be reached with the thin radiator coupling.

physics.ins-det↗

arXiv2024

Simulations and Performance Studies of a MAPS in 65 nm CMOS Imaging Technology

Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications in particle physics. The MAPS design has a small collection electrode characterized by an input capacitance of ~fF, granting a high signal-to-noise ratio and low power consumption. Additionally, the 65 nm CMOS imaging technology brings a reduction in material budget and improved logic density of the readout circuitry, compared to previously studied technologies. Given these features, this technology was chosen by the TANGERINE project to develop the next generation of silicon pixel sensors. The sensor design targets temporal and spatial resolutions compatible with the requirements for a vertex detector at future lepton colliders. Simulations and test-beam characterization of technology demonstrators have been carried out in close collaboration with the CERN EP R&D program and the ALICE ITS3 upgrade. TCAD device simulations using generic doping profiles and Monte Carlo simulations have been used to build an understanding of the technology and predict the performance parameters of the sensor. Technology demonstrators of a 65 nm CMOS MAPS with a small collection electrode have been characterized in laboratory and test-beam facilities by studying performance parameters such as cluster size, charge collection, and efficiency. This work compares simulation results to test-beam data. The experimental results establish this technology as a promising candidate for a vertex detector at future lepton colliders and give valuable information for improving the simulation approach.

physics.ins-det↗

arXiv2024

The DESY Digital Silicon Photomultiplier: Device Characteristics and First Test-Beam Results

Silicon Photomultipliers (SiPMs) are state-of-the-art photon detectors used in particle physics, medical imaging, and beyond. They are sensitive to individual photons in the optical wavelength regime and achieve time resolutions of a few tens of picoseconds, which makes them interesting candidates for timing detectors in tracking systems for particle physics experiments. The Geiger discharges triggered in the sensitive elements of a SiPM, Single-Photon Avalanche Diodes (SPADs), yield signal amplitudes independent of the energy deposited by a photon or ionizing particle. This intrinsically digital nature of the signal motivates its digitization already on SPAD level. A digital SiPM (dSiPM) was designed at Deutsches Elektronen Synchrotron (DESY), combining a SPAD array with embedded CMOS circuitry for on-chip signal processing. A key feature of the DESY dSiPM is its capability to provide hit-position information on pixel level, and one hit time stamp per quadrant at a 3 MHz readout-frame rate. The pixels comprise four SPADs and have a pitch of about 70 um. The four time stamps are provided by 12 bit Time-to-Digital Converters (TDCs) with a resolution better than 100 ps. The chip was characterized in the laboratory to determine dark count rate, breakdown voltage, and TDC characteristics. Test-beam measurements are analyzed to assess the DESY dSiPMs performance in the context of a 4D-tracking applications. The results demonstrate a spatial hit resolution on a pixel level, a minimum-ionizing particle detection efficiency of about 30 % and a time resolution in the order of 50 ps.

physics.ins-det↗

arXiv2023

Developing a Monolithic Silicon Sensor in a 65 nm CMOS Imaging Technology for Future Lepton Collider Vertex Detectors

Monolithic CMOS sensors in a 65 nm imaging technology are being investigated by the CERN EP Strategic R&D Programme on Technologies for Future Experiments for an application in particle physics. The appeal of monolithic detectors lies in the fact that both sensor volume and readout electronics are integrated in the same silicon wafer, providing a reduction in production effort, costs and scattering material. The Tangerine Project WP1 at DESY participates in the Strategic R&D Programme and is focused on the development of a monolithic active pixel sensor with a time and spatial resolution compatible with the requirements for a future lepton collider vertex detector. By fulfilling these requirements, the Tangerine detector is suitable as well to be used as telescope planes for the DESY-II Test Beam facility. The project comprises all aspects of sensor development, from the electronics engineering and the sensor design using simulations, to laboratory and test beam investigations of prototypes. Generic TCAD Device and Monte-Carlo simulations are used to establish an understanding of the technology and provide important insight into performance parameters of the sensor. Testing prototypes in laboratory and test beam facilities allows for the characterization of their response to different conditions. By combining results from all these studies it is possible to optimize the sensor layout. This contribution presents results from generic TCAD and Monte-Carlo simulations, and measurements performed with test chips of the first sensor submission.

physics.ins-det↗

arXiv2022

Photon shot-noise limited transient absorption soft X-ray spectroscopy at the European XFEL

Femtosecond transient soft X-ray Absorption Spectroscopy (XAS) is a very promising technique that can be employed at X-ray Free Electron Lasers (FELs) to investigate out-of-equilibrium dynamics for material and energy research. Here we present a dedicated setup for soft X-rays available at the Spectroscopy & Coherent Scattering (SCS) instrument at the European X-ray Free Electron Laser (EuXFEL). It consists of a beam-splitting off-axis zone plate (BOZ) used in transmission to create three copies of the incoming beam, which are used to measure the transmitted intensity through the excited and unexcited sample, as well as to monitor the incoming intensity. Since these three intensity signals are detected shot-by-shot and simultaneously, this setup allows normalized shot-by-shot analysis of the transmission. For photon detection, the DSSC imaging detector, which is capable of recording up to 800 images at 4.5 MHz frame rate during the FEL burst, is employed and allows approaching the photon shot-noise limit. We review the setup and its capabilities, as well as the online and offline analysis tools provided to users.

physics.ins-det↗

arXiv2022

The interplay of local electron correlations and ultrafast spin dynamics in fcc Ni

The complex electronic structure of metallic ferromagnets is determined by a balance between exchange interaction, electron hopping leading to band formation, and local Coulomb repulsion. The interplay between the respective terms of the Hamiltonian is of fundamental interest, since it produces most, if not all, of the exotic phenomena observed in the solid state. By combining high energy and temporal resolution in femtosecond time-resolved X-ray absorption spectroscopy with ab initio time-dependent density functional theory we analyze the electronic structure in fcc Ni on the time scale of these interactions in a pump-probe experiment. We distinguish transient broadening and energy shifts in the absorption spectra, which we demonstrate to be caused by electron repopulation and correlation-induced modifications of the electronic structure, respectively. Importantly, the theoretical description of this experimental result hence requires to take the local Coulomb interaction into account, revealing a temporal interplay between band formation, exchange interaction, and Coulomb repulsion.

cond-mat.mtrl-sci↗

arXiv2022

Towards a New Generation of Monolithic Active Pixel Sensors

A new generation of Monolithic Active Pixel Sensors (MAPS), produced in a 65 nm CMOS imaging process, promises higher densities of on-chip circuits and, for a given pixel size, more sophisticated in-pixel logic compared to larger feature size processes. MAPS are a cost-effective alternative to hybrid pixel sensors since flip-chip bonding is not required. In addition, they allow for significant reductions of the material budget of detector systems, due to the smaller physical thicknesses of the active sensor and the absence of a separate readout chip. The TANGERINE project develops a sensor suitable for future Higgs factories as well as for a beam telescope to be used at beam-test facilities. The sensors will have small collection electrodes (order of $\mu$m) to maximize the signal-to-noise ratio, which makes it possible to minimize power dissipation in the circuitry. The first batch of test chips, featuring full front-end amplifiers with Krummenacher feedback, was produced and tested at the Mainzer Mikrotron (MAMI) at the end of 2021. MAMI provides an electron beam with currents up to 100 $\mu$A and an energy of 855 MeV. The analog output signal of the test chips was recorded with a high bandwidth oscilloscope and used to study the charge-sensitive amplifier of the chips in terms of waveform analysis. A beam telescope was used as a reference system to allow for track-based analysis of the recorded data.

physics.ins-det↗

arXiv2022

The Tangerine project: Development of high-resolution 65 nm silicon MAPS

The Tangerine project aims to develop new state-of-the-art high-precision silicon detectors. Part of the project has the goal of developing a monolithic active pixel sensor using a novel 65 nm CMOS imaging process, with a small collection electrode. This is the first application of this process in particle physics, and it is of great interest as it allows for an increased logic density and reduced power consumption and material budget compared to other processes. The process is envisioned to be used in for example the next ALICE inner tracker upgrade, and in experiments at the electron-ion collider. The initial goal of the three-year Tangerine project is to develop and test a sensor in a 65 nm CMOS imaging process that can be used in test beam telescopes at DESY, providing excellent spatial resolution and high time resolution, and thus demonstrating the capabilities of the process. The project covers all aspects of sensor R&D, from electronics and sensor design using simulations, to prototype test chip characterisation in labs and at test beams. The sensor design simulations are performed by using a powerful combination of detailed electric field simulations using technology computer-aided design and high-statistics Monte Carlo simulations using the Allpix Squared framework. A first prototype test chip in the process has been designed and produced, and successfully operated and tested both in labs and at test beams.

physics.ins-det↗

arXiv2022

Megahertz-rate Ultrafast X-ray Scattering and Holographic Imaging at the European XFEL

The advent of X-ray free-electron lasers (XFELs) has revolutionized fundamental science, from atomic to condensed matter physics, from chemistry to biology, giving researchers access to X-rays with unprecedented brightness, coherence, and pulse duration. All XFEL facilities built until recently provided X-ray pulses at a relatively low repetition rate, with limited data statistics. Here, we present the results from the first megahertz repetition rate X-ray scattering experiments at the Spectroscopy and Coherent Scattering (SCS) instrument of the European XFEL. We illustrate the experimental capabilities that the SCS instrument offers, resulting from the operation at MHz repetition rates and the availability of the novel DSSC 2D imaging detector. Time-resolved magnetic X-ray scattering and holographic imaging experiments in solid state samples were chosen as representative, providing an ideal test-bed for operation at megahertz rates. Our results are relevant and applicable to any other non-destructive XFEL experiments in the soft X-ray range.

cond-mat.mes-hall↗

arXiv2017

First functionality tests of a 64 x 64 pixel DSSC sensor module connected to the complete ladder readout

The European X-ray Free Electron Laser (XFEL.EU) will provide every 0.1 s a train of 2700 spatially coherent ultrashort X-ray pulses at 4.5 MHz repetition rate. The Small Quantum Systems (SQS) instrument and the Spectroscopy and Coherent Scattering instrument (SCS) operate with soft X-rays between 0.5 keV - 6keV. The DEPFET Sensor with Signal Compression (DSSC) detector is being developed to meet the requirements set by these two XFEL.EU instruments. The DSSC imager is a 1 mega-pixel camera able to store up to 800 single-pulse images per train. The so-called ladder is the basic unit of the DSSC detector. It is the single unit out of sixteen identical-units composing the DSSC-megapixel camera, containing all representative electronic components of the full-size system and allows testing the full electronic chain. Each DSSC ladder has a focal plane sensor with 128 x 512 pixels. The read-out ASIC provides full-parallel readout of the sensor pixels. Every read-out channel contains an amplifier and an analog filter, an up-to 9 bit ADC and the digital memory. The ASIC amplifier have a double front-end to allow one to use either DEPFET sensors or Mini-SDD sensors. In the first case, the signal compression is a characteristic intrinsic of the sensor; in the second case, the compression is implemented at the first amplification stage. The goal of signal compression is to meet the requirement of single-photon detection capability and wide dynamic range. We present the first results of measurements obtained using a 64 x 64 pixel DEPFET sensor attached to the full final electronic and data-acquisition chain.

physics.ins-det↗

arXiv2016

Safety-Interlock System of the DSSC X-Ray Imager

In this paper, the DSSC safety-interlock system is introduced. It is designed to keep the DSSC mega-pixel camera in a safe-state. The system is composed of four inter-communicating sub-systems referred here as a master SIB (safety-interlock board) and three partner SIBs. Each SIB monitors and processes 75 temperature sensors mainly located in the focal plane and also distributed inside the camera-head electronics. It monitors the signals from two pressure sensors, one humidity sensor as well as the connectivity to sixteen low-voltage and two high-voltage cables. The master SIB supervises the signals to and from external equipments like the cooling system, pressure gauge, power crates and status information from experimental environment. SIB is an 8-layer printed-circuit board (PCB) with a micro-controller sitting on top as its central processing unit. A decision-matrix software reads the sensor status continuously and determines whether the camera is in a safe state or not. All error and warnings flags are sent to the detector control software framework and the end user directly. These flags are also stored every 100 ms together with the image data. The full SIB sensor data is sent to the back end for offline analysis. A shutdown sequence is initiated by SIB in case of a critical failure. The safety-interlock philosophy, hardware design, and software architecture along with test results will be presented.

physics.ins-det↗