arXiv subjects

S. D. Ganichev

Publications and source records attributed to S. D. Ganichev.

116 records · Page 7Linked to original sources

arXiv2003

Spin-photocurrent in p-SiGe quantum wells under terahertz laser irradiation

A detailed study of the circular photogalvanic effect (CPGE) in SiGe structures is presented. It is shown that the CPGE becomes possible due to the built-in asymmetry of quantum wells (QWs) in compositionally stepped samples and in asymmetrically doped structures. The photocurrent arises due to optical spin orientation of free carriers in QWs with spin splitting in k-space. It is shown that the effect can be applied to probe the macroscopic in-plane symmetry of low dimensional structures and allowing to conclude on Rashba or Dresselhaus terms in the Hamiltonian.

cond-mat↗

arXiv2003

Spin-Galvanic Effect in Quantum Wells

It is shown that a homogeneous non-equlibrium spin-polarization in semiconductor heterostructures results in an electric current. The microscopic origin of the effect is an inherent asymmetry of spin-flip scattering in systems with lifted spin degeneracy caused by k-linear terms in the Hamiltonian.

cond-mat↗

arXiv2003

Monopolar Optical Orientation of Electronic Spins in Semiconductors

It is shown that absorption of circularly polarized infrared radiation due to intraband (Drude-like) transitions in n-type bulk semiconductors and due to intra-subband or inter-subband transitions in quantum well (QW) structures results in a monopolar spin orientation of free electrons. Spin polarization in zinc-blende-structure based QWs is demonstrated by the observation of the spin-galvanic and the circular photogalvanic effects. The monopolar spin orientation in n-type materials is shown to be possible if an admixture of valence band states to the conduction band wave function and the spin-orbit splitting of the valence band are taken into account.

cond-mat↗

arXiv2003

Spin-dependent tunnelling through a symmetric barrier

The problem of electron tunnelling through a symmetric semiconductor barrier based on zinc-blende-structure material is studied. The $k^3$ Dresselhaus terms in the effective Hamiltonian of bulk semiconductor of the barrier are shown to result in a dependence of the tunnelling transmission on the spin orientation. The difference of the transmission probabilities for opposite spin orientations can achieve several percents for the reasonable width of the barriers.

cond-mat.mes-hall↗

arXiv2001

Spin sensitive bleaching and monopolar spin orientation in quantum wells

Spin sensitive bleaching of the absorption of far-infrared radiation has been observed in $p$-type GaAs/AlGaAs quantum well structures. The absorption of circularly polarized radiation saturates at lower intensities than that of linearly polarized light due to monopolar spin orientation in the first heavy hole subband. Spin relaxation times of holes in $p$-type material in the range of tens of ps were derived from the intensity dependence of the absorption.

cond-mat↗

arXiv2000

Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities

A giant negative magnetoresistance has been observed in bulk germanium doped with multiply charged deep impurities. Applying a magnetic field the resistance may decrease exponentially at any orientation of the field. A drop of the resistance as much as about 10000% has been measured at 6 T. The effect is attributed to the spin splitting of impurity ground state with a very large g-factor in the order of several tens depending on impurity.

cond-mat↗

arXiv2000

Circular photogalvanic effect induced by monopolar spin orientation in p-GaAs/AlGaAs MQW

The circular photogalvanic effect (CPGE) has been observed in (100)-oriented $p$-GaAs/AlGaAs quantum wells at normal incidence of far-infrared radiation. It is shown that monopolar optical spin orientation of free carriers causes an electric current which reverses its direction upon changing from left to right circularly polarized radiation. CPGE at normal incidence and the occurence of the linear photogalvanic effect indicate a reduced point symmetry of studied multi-layered heterostructures. As proposed, CPGE can be utilized to investigate separately spin polarization of electrons and holes and the symmetry of quantum wells.

physics.ins-det↗

arXiv1999

Near-field induced FIR Josephson-detection by c-axis-oriented YBa_2Cu_3O_7-delta-films

A novel approach to intrinsic Josephson-detection of far infrared radiation is reported utilizing near-zone field effects at electric contacts on c-axis oriented YBa_2Cu_3O_7-delta films. While only a bolometric signal was observed focusing the radiation far off the contacts on c-axis normal films, irradiating the edge of contacts yielded an almost wavelength independent fast signal showing the characteristic intensity dependence of Josephson-detection. The signal is attributed to a c-axis parallel component of the electric radiation field being generated in the near-zone field of diffraction at the metallic contact structures.

cond-mat.supr-con↗