Anisotropic straining of graphene using micropatterned SiN membranes

Fabiana Francesca Settembrini; Francesco Colangelo; Alessandro Pitanti; Vaidotas Miseikis; Camilla Coletti; Guido Menichetti; Renato Colle; Giuseppe Grosso; Alessandro Tredicucci; Stefano Roddaro

arXiv · 1606.06995

Anisotropic straining of graphene using micropatterned SiN membranes

Fabiana Francesca Settembrini·Francesco Colangelo·Alessandro Pitanti·Vaidotas Miseikis·Camilla Coletti·Guido Menichetti·Renato Colle·Giuseppe Grosso·Alessandro Tredicucci·Stefano Roddaro

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Abstract

We use micro-Raman spectroscopy to study strain profiles in graphene monolayers suspended over SiN membranes micropatterned with holes of non-circular geometry. We show that a uniform differential pressure load $\Delta P$ over elliptical regions of free-standing graphene yields measurable deviations from hydrostatic strain conventionally observed in radially-symmetric microbubbles. The top hydrostatic strain $\bar{\varepsilon}$ we observe is estimated to be $\approx0.7\%$ for $\Delta P = 1\,{\rm bar}$ in graphene clamped to elliptical SiN holes with axis $40$ and $20\,{\rm \mu m}$. In the same configuration, we report a $G_\pm$ splitting of $10\,{\rm cm^{-1}}$ which is in good agreement with the calculated anisotropy $\Delta\varepsilon \approx 0.6\%$ for our device geometry. Our results are consistent with the most recent reports on the Gr\"uneisen parameters. Perspectives for the achievement of arbitrary strain configurations by designing suitable SiN holes and boundary clamping conditions are discussed.

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Fabiana Francesca Settembrini, Francesco Colangelo, Alessandro Pitanti, Vaidotas Miseikis, Camilla Coletti, Guido Menichetti, Renato Colle, Giuseppe Grosso, Alessandro Tredicucci, Stefano Roddaro. 2016-06-22. Anisotropic straining of graphene using micropatterned SiN membranes. https://arxiv.org/abs/1606.06995

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