arXiv subjects

U. Zeitler

Publications and source records attributed to U. Zeitler.

At least 73 records · Page 4Linked to original sources

arXiv2009

Scaling of the quantum-Hall plateau-plateau transition in graphene

The temperature dependence of the magneto-conductivity in graphene shows that the widths of the longitudinal conductivity peaks, for the N=1 Landau level of electrons and holes, display a power-law behavior following $Δν\propto T^κ$ with a scaling exponent $κ= 0.37\pm0.05$. Similarly the maximum derivative of the quantum Hall plateau transitions $(dσ_{xy}/dν)^{max}$ scales as $T^{-κ}$ with a scaling exponent $κ= 0.41\pm0.04$ for both the first and second electron and hole Landau level. These results confirm the universality of a critical scaling exponent. In the zeroth Landau level, however, the width and derivative are essentially temperature independent, which we explain by a temperature independent intrinsic length that obscures the expected universal scaling behavior of the zeroth Landau level.

cond-mat.mes-hall↗

arXiv2009

Gap opening in the zeroth Landau level of graphene

We have measured a strong increase of the low-temperature resistivity $ρ_{xx}$ and a zero-value plateau in the Hall conductivity $σ_{xy}$ at the charge neutrality point in graphene subjected to high magnetic fields up to 30 T. We explain our results by a simple model involving a field dependent splitting of the lowest Landau level of the order of a few Kelvin, as extracted from activated transport measurements. The model reproduces both the increase in $ρ_{xx}$ and the anomalous $ν=0$ plateau in $σ_{xy}$ in terms of coexisting electrons and holes in the same spin-split zero-energy Landau level.

cond-mat.mes-hall↗

arXiv2009

Temperature dependence of antiferromagnetic susceptibility in ferritin

We show that antiferromagnetic susceptibility in ferritin increases with temperature between 4.2 K and 180 K (i. e. below the Néel temperature) when taken as the derivative of the magnetization at high fields ($30\times10^4$ Oe). This behavior contrasts with the decrease in temperature previously found, where the susceptibility was determined at lower fields ($5\times10^4$ Oe). At high fields (up to $50 \times10^4$ Oe) the temperature dependence of the antiferromagnetic susceptibility in ferritin nanoparticles approaches the normal behavior of bulk antiferromagnets and nanoparticles considering superantiferromagnetism, this latter leading to a better agreement at high field and low temperature. The contrast with the previous results is due to the insufficient field range used ($< 5 \times10^4$ Oe), not enough to saturate the ferritin uncompensated moment.

cond-mat.str-el↗

arXiv2008

Quantum resistance metrology in graphene

We have performed a metrological characterization of the quantum Hall resistance in a 1 $μ$m wide graphene Hall-bar. The longitudinal resistivity in the center of the $ν=\pm 2$ quantum Hall plateaus vanishes within the measurement noise of 20 m$Ω$ upto 2 $μ$A. Our results show that the quantization of these plateaus is within the experimental uncertainty (15 ppm for 1.5$ μ$A current) equal to that in conventional semiconductors. The principal limitation of the present experiments are the relatively high contact resistances in the quantum Hall regime, leading to a significantly increased noise across the voltage contacts and a heating of the sample when a high current is applied.

cond-mat.mes-hall↗

arXiv2008

Magnetoresistance oscillations and relaxation effects at the SrTiO3-LaAlO3 interface

We present low-temperature and high-field magnetotransport data on SrTiO3-LaAlO3 interfaces. The resistance shows hysteresis in magnetic field and a logarithmic relaxation as a function of time. Oscillations in the magnetoresistance are observed, showing a square root periodicity in the applied magnetic field, both in large-area unstructured samples as well as in a structured sample. An explanation in terms of a commensurability condition of edge states in a highly mobile two-dimensional electron gas between substrate step edges is suggested.

cond-mat.str-el↗

arXiv2008

Nanolithography and manipulation of graphene using an atomic force microscope

We use an atomic force microscope (AFM) to manipulate graphene films on a nanoscopic length scale. By means of local anodic oxidation with an AFM we are able to structure isolating trenches into single-layer and few-layer graphene flakes, opening the possibility of tabletop graphene based device fabrication. Trench sizes of less than 30 nm in width are attainable with this technique. Besides oxidation we also show the influence of mechanical peeling and scratching with an AFM of few layer graphene sheets placed on different substrates.

cond-mat.mes-hall↗

arXiv2007

Quantum-Hall activation gaps in graphene

We have measured the quantum-Hall activation gaps in graphene at filling factors $ν=2$ and $ν=6$ for magnetic fields up to 32 T and temperatures from 4 K to 300 K. The $ν=6$ gap can be described by thermal excitation to broadened Landau levels with a width of 400 K. In contrast, the gap measured at $ν=2$ is strongly temperature and field dependent and approaches the expected value for sharp Landau levels for fields $B > 20$ T and temperatures $T > 100$ K. We explain this surprising behavior by a narrowing of the lowest Landau level.

cond-mat.mes-hall↗

arXiv2007

Experimental imaging and atomistic modeling of electron and hole quasiparticle wave functions in InAs/GaAs quantum dots

We present experimental magnetotunneling results and atomistic pseudopotential calculations of quasiparticle electron and hole wave functions of self-assembled InAs/GaAs quantum dots. The combination of a predictive theory along with the experimental results allows us to gain direct insight into the quantum states. We monitor the effects of (i) correlations, (ii) atomistic symmetry and (iii) piezoelectricity on the confined carriers and (iv) observe a peculiar charging sequence of holes that violates the Aufbau principle.

cond-mat.mtrl-sci↗

arXiv2007

Magnetic effects at the interface between nonmagnetic oxides

The electronic reconstruction at the interface between two insulating oxides can give rise to a highly-conductive interface. In analogy to this remarkable interface-induced conductivity we show how, additionally, magnetism can be induced at the interface between the otherwise nonmagnetic insulating perovskites SrTiO3 and LaAlO3. A large negative magnetoresistance of the interface is found, together with a logarithmic temperature dependence of the sheet resistance. At low temperatures, the sheet resistance reveals magnetic hysteresis. Magnetic ordering is a key issue in solid-state science and its underlying mechanisms are still the subject of intense research. In particular, the interplay between localized magnetic moments and the spin of itinerant conduction electrons in a solid gives rise to intriguing many-body effects such as Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions, the Kondo effect, and carrier-induced ferromagnetism in diluted magnetic semiconductors. The conducting oxide interface now provides a versatile system to induce and manipulate magnetic moments in otherwise nonmagnetic materials.

cond-mat.str-el↗

arXiv2007

Room-Temperature Quantum Hall Effect in Graphene

The quantum Hall effect (QHE), one example of a quantum phenomenon that occur on a truly macroscopic scale, has been attracting intense interest since its discovery in 1980 and has helped elucidate many important aspects of quantum physics. It has also led to the establishment of a new metrological standard, the resistance quantum. Disappointingly, however, the QHE could only have been observed at liquid-helium temperatures. Here, we show that in graphene - a single atomic layer of carbon - the QHE can reliably be measured even at room temperature, which is not only surprising and inspirational but also promises QHE resistance standards becoming available to a broader community, outside a few national institutions.

cond-mat.mes-hall↗

arXiv2006

Specific Heat of a Fractional Quantum Hall System

Using a time-resolved phonon absorption technique, we have measured the specific heat of a two-dimensional electron system in the fractional quantum Hall effect regime. For filling factors $ν= 5/3, 4/3, 2/3, 3/5, 4/7, 2/5$ and 1/3 the specific heat displays a strong exponential temperature dependence in agreement with excitations across a quasi-particle gap. At filling factor $ν= 1/2$ we were able to measure the specific heat of a composite fermion system for the first time. The observed linear temperature dependence on temperature down to $T = 0.14$ K agrees well with early predictions for a Fermi liquid of composite fermions.

cond-mat.mes-hall↗

arXiv2006

Quantum critical behaviour of the plateau-insulator transition in the quantum Hall regime

High-field magnetotransport experiments provide an excellent tool to investigate the plateau-insulator phase transition in the integral quantum Hall effect. Here we review recent low-temperature high-field magnetotransport studies carried out on several InGaAs/InP heterostructures and an InGaAs/GaAs quantum well. We find that the longitudinal resistivity $ρ_{xx}$ near the critical filling factor $ν_{c}$ ~ 0.5 follows the universal scaling law $ρ_{xx}(ν, T) \propto exp[-Δν/(T/T_{0})^κ]$, where $Δν=ν-ν_{c}$. The critical exponent $κ$ equals $0.56 \pm 0.02$, which indicates that the plateau-insulator transition falls in a non-Fermi liquid universality class.

cond-mat.mes-hall↗

arXiv2006

Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene

There are known two distinct types of the integer quantum Hall effect. One is the conventional quantum Hall effect, characteristic of two-dimensional semiconductor systems, and the other is its relativistic counterpart recently observed in graphene, where charge carriers mimic Dirac fermions characterized by Berry's phase pi, which results in a shifted positions of Hall plateaus. Here we report a third type of the integer quantum Hall effect. Charge carriers in bilayer graphene have a parabolic energy spectrum but are chiral and exhibit Berry's phase 2pi affecting their quantum dynamics. The Landau quantization of these fermions results in plateaus in Hall conductivity at standard integer positions but the last (zero-level) plateau is missing. The zero-level anomaly is accompanied by metallic conductivity in the limit of low concentrations and high magnetic fields, in stark contrast to the conventional, insulating behavior in this regime. The revealed chiral fermions have no known analogues and present an intriguing case for quantum-mechanical studies.

cond-mat.mes-hall↗

arXiv2005

Coulomb-interaction induced incomplete shell filling in the hole system of InAs quantum dots

We have studied the hole charging spectra of self-assembled InAs quantum dots in perpendicular magnetic fields by capacitance-voltage spectroscopy. From the magnetic field dependence of the individual peaks we conclude that the s-like ground state is completely filled with two holes but that the fourfold degenerate p-shell is only half filled with two holes before the filling of the d-shell starts. The resulting six-hole ground state is highly polarized. This incomplete shell filling can be explained by the large influence of the Coulomb interaction in this system.

cond-mat.mes-hall↗

arXiv2004

Phonon Excitations of Composite Fermion Landau Levels

Phonon excitations of fractional quantum Hall states at filling factors nu = 1/3, 2/5, 4/7, 3/5, 4/3, and 5/3 are experimentally shown to be based on Landau level transitions of Composite Fermions. At filling factor nu = 2/3, however, a linear field dependence of the excitation energy in the high-field regime rather hints towards a spin transition excited by the phonons. We propose to explain this surprising observation by an only partially polarized 2/3-ground-state making the energetically lower lying spin transition also allowed for phonon excitations.

cond-mat.mes-hall↗

arXiv2003

Magnetization of a two-dimensional electron gas with a second filled subband

We have measured the magnetization of a dual-subband two-dimensional electron gas, confined in a GaAs/AlGaAs heterojunction. In contrast to two-dimensional electron gases with a single subband, we observe non-1/B-periodic, triangularly shaped oscillations of the magnetization with an amplitude significantly less than $1 μ_{\mathrm{B}}^*$ per electron. All three effects are explained by a field dependent self-consistent model, demonstrating the shape of the magnetization is dominated by oscillations in the confining potential. Additionally, at 1 K, we observe small oscillations at magnetic fields where Landau-levels of the two different subbands cross.

cond-mat.mes-hall↗

arXiv2002

Steps on current-voltage characteristics of a silicon quantum dot covered by natural oxide

Considering a double-barrier structure formed by a silicon quantum dot covered by natural oxide with two metallic terminals, we derive simple conditions for a step-like voltage-current curve. Due to standard chemical properties, doping phosphorus atoms located in a certain domain of the dot form geometrically parallel current channels. The height of the current step typically equals to (1.2 pA)N, where N=0,1,2,3... is the number of doping atoms inside the domain, and only negligibly depends on the actual position of the dopants. The found conditions are feasible in experimentally available structures.

cond-mat.mes-hall↗

arXiv2002

Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters

We investigated the size dependence of the ground state energy in self-assembled InAs quantum dots embedded in resonant tunneling diodes. Individual current steps observed in the current-voltage characteristics are attributed to resonant single-electron tunneling via the ground state of individual InAs quantum dots. The onset voltage of the first step observed is shown to decrease systematically from 200 mV to 0 with increasing InAs coverage. We relate this to a coverage-dependent size of InAs dots grown on AlAs. The results are confirmed by atomic force micrographs and photoluminescence experiments on reference samples.

cond-mat.mes-hall↗