arXiv subjects

W. Prellier

Publications and source records attributed to W. Prellier.

At least 55 records · Page 3Linked to original sources

arXiv2008

A Multiferroic Ceramic with Perovskite Structure: La0.5Bi0.5Mn0.5Fe0.5O3.09

ABO3 perovskite multiferroic La0.5Bi0.5Mn0.5Fe0.5O3.09 where the B-site cations is responsible for the magnetic properties and the A-site cation with lone pair electron is responsible for the ferroelectric properties was synthesized at normal conditions. This oxide exhibits a ferromagnetic transition around 240 K with a well defined hysteresis loop, and a significant reversible remnant polarization below 67K similar to ferroelectric behavior. The magnetic interaction is interpreted by the ferromagnetic Fe3+-O-Mn3+ and antiferromagnetic Fe3+(Mn3+)-O-Fe3+(Mn3+) interactions competed each other, whereas the ferroelectricity is predominantly due to the polar nature introduced by the 6s2 lone pair of Bi3+ cations

cond-mat.mtrl-sci↗

arXiv2008

DC Leakage behavior and Conduction Mechanism in (BiFeO3)m(SrTiO3)m Superlattices

Leakage current behavior of (BiFeO3)m(SrTiO3)m superlattice structures was studied and analyzed at different temperatures (303-473K) in the light of various models. While bulk limited Poole-Frenkel emission was observed to dominate the leakage current in the temperature range of 303 - 383 K, the space charge limited conduction was observed up to 473 K. With a Poole-Frenkel emission type of conduction, the activation energy range of 0.06 - 0.2 eV was calculated. The physical parameters, calculated from the analysis correlates with the intrinsic properties. The analysis of leakage current facilitates, interface engineering of heterostructures for device applications.

cond-mat.mtrl-sci↗

arXiv2008

Interfacial contribution to the dielectric response in semiconducting LaBiMn4/3Co2/3O6

Impedance measurements have been performed on a sintered polycrystalline sample of the perovskite LaBiMn4/3Co2/3O6. Colossal dielectric permittivity often is measured in this class of semiconducting materials as a result of extrinsic factors. Our results show that a large offset in the capacitance, measured on a series of samples with different thickness, is due to the interfacial polarization. This contribution then can be removed from the data, creating a general procedure for dielectric measurements in semiconducting samples.

cond-mat.mtrl-sci↗

arXiv2008

Ferromagnetism and magneto-dielectric effect in insulating LaBiMn4/3Co2/3O6 thin films

High quality epitaxial thin films of LaBiMn4/3Co2/3O6 perovskite were fabricated on (001)-oriented SrTiO3 and LaAlO3 substrates by the pulsed laser deposition technique. Magnetization measurements reveal a strong magnetic anisotropy and a ferromagnetic behavior that is in agreement with a super-exchange interaction between Mn4+ and Co2+ ions, which are randomly distributed in the B-site. A distinct anomaly is observed in the dielectric measurements at 130K corresponding to the onset of the magnetic ordering, suggesting a coupling. Above this temperature, the extrinsic Maxwell-Wagner effect is dominating. Theses results are explained using the Raman spectroscopic studies indicating a weak spin-lattice interaction around this magnetic transition.

cond-mat.mtrl-sci↗

arXiv2007

Periodicity-dependence of the ferroelectric properties in BiFeO3/SrTiO3 multiferroic superlattices

Artificial superlattices of (BiFeO3)m(SrTiO3)m (m= 1 to 10 unit cells) consisting of multiferroic BiFeO3 and insulating SrTiO3 layers were fabricated on (100)-oriented SrTiO3 substrates by pulsed laser ablation. The remnant polarization and leakage current behavior were studied varying the periodicity (8-80A) of the superlattice. The leakage current was reduced by few orders of magnitude on increase of periodicity compared to single layer BiFeO3 thin films. Reduced leakage and intrinsic polarization hysteresis was observed and was confirmed by PUND analysis for periodicities in the range 20-60A. The leakage current was observed to be dominated by space charge limited conduction

cond-mat.mtrl-sci↗

arXiv2007

Effect of charge modulation in (LaVO3)m(SrVO3)n superlattices on the insulator-metal transition

A series of epitaxial (LaVO3)6m(SrVO3)m superlattices having the same nominal composition as La6/7Sr1/7VO3, a Mott-Hubbard insulator, were grown with pulsed-laser deposition on [001]-oriented SrTiO3 substrates, and their superlattice period was varied. When m=1, the insulating resistivity of bulk-like La6/7Sr1/7VO3 is obtained; however, an increase in the periodicity (m>=2) results in metallic samples. Comparison of the superlattice periodicity with the coherence length of charge carriers in perovskite oxide heterostructures are used to understand these observations. A filling-controlled insulator-metal transition was induced by placing a single dopant layer of SrVO3 within LaVO3 layers of varying thickness.

cond-mat.mtrl-sci↗

arXiv2007

Thickness-dependence of the electronic properties in V2O3 thin films

High quality vanadium sesquioxide V2O3 films (170-1100 Å) were grown using the pulsed laser deposition technique on (0001)-oriented sapphire substrates, and the effects of film thickness on the lattice strain and electronic properties were examined. X-ray diffraction indicates that there is an in-plane compressive lattice parameter (a), close to -3.5% with respect to the substrate and an out-of-plane tensile lattice parameter (c) . The thin film samples display metallic character between 2-300 K, and no metal-to-insulator transition is observed. At low temperature, the V2O3 films behave as a strongly correlated metal, and the resistivity (ρ) follows the equation ρ=ρ_0 + A T^2, where A is the transport coefficient in a Fermi liquid. Typical values of A have been calculated to be 0.14 μΩcm K^{-2}, which is in agreement with the coefficient reported for V2O3 single crystals under high pressure. Moreover, a strong temperature-dependence of the Hall resistance confirms the electronic correlations of these V2O3 thin films samples.

cond-mat.str-el↗

arXiv2007

Anomalous exchange coupling in transition-metal-oxide based superlattices with antiferromagnetic spacer layers

A direct correlation is seen between the coercive field (HC) and the magnetic-field-dependent resistivity (MR) in SrMnO3/SrRuO3 superlattices of perpendicular magnetic anisotropy. The magnetoresistance shows a sharp jump at Hc for in-plane current and the out-of-plane magnetic field. Both HC and high-field MR also oscillate with the thickness of the SrMnO3 spacer layers separating the metallic ruthenate. Since the spacer in these superlattices has no mobile carriers to facilitate an oscillatory coupling, we attribute the observed behavior to the spin-polarized quantum tunneling of electrons between the ferromagnetic layers and antiferromagnetically ordered t2g spins of SrMnO3.

cond-mat.str-el↗

arXiv2007

Absence of long-range Ni/Mn ordering in ferromagnetic La2NiMnO6 thin films

Epitaxial La2NiMnO6 thin films have been grown on (001)-oriented SrTiO3 using the PLD technique. The thin films are semiconducting and FM with a TC close to 270K, a coercive field of 920Oe, and a saturation magnetization of 5muB per f.u. TEM, conducted at RT, reveals a majority phase having "I-centered" structure with a=c=1.4asub and b=2asub along with a minority phase-domains having "P-type" structure (asub being the lattice parameter of the perovskite structure). A discusion on the presence of Ni/Mn long-range ordering, in light of recent literature on double perovskites La2NiMnO6 is presented.

cond-mat.mtrl-sci↗

arXiv2006

Resistive hystersis effects in perovskite oxide-based heterostructure junctions

In this paper, we report the electrical and structural properties of the oxide-based metal/ferroelectric/metal (MFM) junctions. The heterostructures are composed of ultrathin layers of La0.7Ca0.3MnO3 (LCMO) as a metallic layer and, BaTiO3 (BTO) as a ferroelectric layer. Junction based devices, having the dimensions of 400 x 200 micom2, have been fabricated upon LCMO/BTO/LCMO heterostructures by photolithography and Ar-ion milling technique. The DC current-voltage (I-V) characteristics of the MFM junctions were carried out. At 300 K, the devices showed the linear (I-V) characteristics, whereas at 77 K, (I-V) curves exhibited some reproducible switching behaviours with well-defined remnant currents. The resulting resistance modulation is very different from what was already reported in ultrathin ferroelectric layers displaying resistive switching. A model is presented to explain the datas

cond-mat.mtrl-sci↗

arXiv2006

The magnetotransport properties of La0.7Sr0.3MnO3/BaTiO3 superlattices grown by pulsed laser deposition technique

We have investigated the magnetotransport properties of La0.7Sr0.3MnO3/BaTiO3 superlattices, grown on SrTiO3 substrate by pulsed laser deposition technique, both with current-in-plane and current-perpendicular-to-the-plane directions. Several features indicate the presence of magnetic inhomogeneities at the interfaces which is independent of BaTiO3 layer thickness variation. First, the magnetic property in the superlattices decreases. Second, a hysteresis in magnetoresistance due to the relaxation of the resistive state is observed. Third, a threshold under an applied magnetic field in the magnetoresistance is seen. Such behaviors are in agreement with the phase separation scenario which could be the possible reason for these magnetic inhomogeneities at the interfaces. On the contrary, the magnetoresistance with the current-perpendicular-to-the-plane direction is mostly attributed to the tunneling effect along with the ordering of the spin at the interface. This study confirms the importance of the interfaces in superlattices that can be used to control novel physical properties in oxide materials.

cond-mat.mtrl-sci↗

arXiv2006

Influence of the microstructure on the magnetism of Co-doped ZnO thin films

The prediction of ferromagnetism at room temperature in Co-ZnO thin films has generated a large interest in the community due to the possible applications. However, the results are controversial, going from ferromagnetism to non-ferromagnetism, leading to a large debate about its origin (secondary phase, Co clusters or not). By carefully studying the micro-structure of various Co-ZnO films, we show that the Co2+ partly substitutes the ZnO wurtzite matrix without forming Co clusters. Surprisingly, the ferromagnetism nature of the films disappears as the Co content increases. In addition, our results suggest that the observed ferromagnetism is likely associated to a large amount of defects- close to the interface and strongly depending on the growth temperature- which may explained the spreading of the results.

cond-mat.mtrl-sci↗

arXiv2006

Antiferromagnetic coupling and enhanced magnetization in all-ferromagnetic superlattices

The structural and magnetic properties of a series of superlattices consisting of two ferromagnetic metals La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO) and SrRuO$_3$ (SRO) grown on (001) oriented SrTiO$_3$ are studied. Superlattices with a fixed LSMO layer thickness of 20 unit cells (u.c.) and varying SRO layer thickness show a sudden drop in magnetization on cooling through temperature where both LSMO and SRO layers are ferromagnetic. This behavior suggests an antiferromagnetic coupling between the layers. In addition, the samples having thinner SRO layers (n \TEXTsymbol{<} 6) exhibit enhanced saturation magnetization at 10 K. These observations are attributed to the possible modification in the stereochemistry of the Ru and Mn ions in the interfacial region.

cond-mat.mtrl-sci↗

arXiv2005

Correlation between structure and properties in multiferroic La$_{0.7}$Ca$_{0.3}$MnO$_3$/BaTiO$_3$ superlattices

Superlattices composed of ferromagnetics, namely La$_{0.7}$Ca$_{0.3}$MnO$_3$ (LCMO), and ferroelectrics, namely, BaTiO$_3$(BTO) were grown on SrTiO$_3$ at 720$^o$C by pulsed laser deposition process. While the out-of-plane lattice parameters of the superlattices, as extracted from the X-ray diffraction studies, were found to be dependent on the BTO layer thickness, the in-plane lattice parameter is almost constant. The evolution of the strains, their nature, and their distribution in the samples, were examined by the conventional sin$^2ψ$ method. The effects of structural variation on the physical properties, as well as the possible role of the strain on inducing the multiferroism in the superlattices, have also been discussed.

cond-mat.mtrl-sci↗

arXiv2005

Effect of ferroelectric layers on the magnetocapacitance properties of superlattices-based oxide multiferroics

A series of superlattices composed of ferromagnetic La$_{0.7}$Ca$_{0.3}$MnO$_3$ (LCMO) and ferroelectric/paraelectric Ba$_{1-x}$Sr$_x$TiO$_3$ (0$\leq $x$\leq $1) were deposited on SrTiO$_3$ substrates using the pulsed laser deposition. Films of epitaxial nature comprised of spherical mounds having uniform size are obtained. Magnetotransport properties of the films reveal a ferromagnetic Curie temperature in the range of 145-158 K and negative magnetoresistance as high as 30%, depending on the type of ferroelectric layers employed for their growth (\QTR{it}{i.e.} '\QTR{it}{x'} value). Ferroelectricity at temperatures ranging from 55 K to 105 K is also observed, depending on the barium content. More importantly, the multiferroic nature of the film is determined by the appearance of negative magnetocapacitance, which was found to be maximum around the ferroelectric transition temperature (3% per \QTR{it}{tesla}). These results are understood based on the role of the ferroelectric/paraelectric layers and strains in inducing the multiferroism.

cond-mat.mtrl-sci↗

arXiv2005

Unconventional Hall effect in oriented Ca$_3$Co$_4$O$_9$ thin films

Transport properties of the good thermoelectric misfit oxide Ca$_3$Co$_4$O$_9$ are examined. In-plane resistivity and Hall resistance measurements were made on epitaxial thin films which were grown on {\it c}-cut sapphire substrates using the pulsed laser deposition technique. Interpretation of the in-plane transport experiments relates the substrate-induced strain in the resulting film to single crystals under very high pressure ($\sim$ 5.5 GPa) consistent with a key role of strong electronic correlation. They are confirmed by the measured high temperature maxima in both resistivity and Hall resistance. While hole-like charge carriers are inferred from the Hall effect measurements over the whole investigated temperature range, the Hall resistance reveals a non monotonic behavior at low temperatures that could be interpreted with an anomalous contribution. The resulting unconventional temperature dependence of the Hall resistance seems thus to combine high temperature strongly correlated features above 340 K and anomalous Hall effect at low temperature, below 100 K.

cond-mat.str-el↗

arXiv2005

Out of equilibrium electronic transport properties of a misfit cobaltite thin film

We report on transport measurements in a thin film of the 2D misfit Cobaltite $Ca_{3}Co_{4}O_{9}$. Dc magnetoresistance measurements obey the modified variable range hopping law expected for a soft Coulomb gap. When the sample is cooled down, we observe large telegraphic-like fluctuations. At low temperature, these slow fluctuations have non Gaussian statistics, and are stable under a large magnetic field. These results suggest that the low temperature state is a glassy electronic state. Resistance relaxation and memory effects of pure magnetic origin are also observed, but without aging phenomena. This indicates that these magnetic effects are not glassy-like and are not directly coupled to the electronic part.

cond-mat.str-el↗

arXiv2005

Stress deformations and structural quenching in Sm0.5Ca0.5MnO3 thin films allow a huge decrease of the charge order melting magnetic field

Thin films of Sm0.5Ca0.5MnO3 manganites with charge ordering (CO) properties and colossal magnetoresistance were synthesized by pulsed laser deposition technique on (100)-SrTiO3 and (100)-LaAlO3 substrates. We first compare the structural modifications as function of the substrate and film thickness. Secondly, measuring transport properties in magnetic fields up to 24T, we establish the temperature-field phase diagram describing the stability of the CO state and compare it to bulk material. We show that some structural modification induced by the substrate occurs and that the CO melting magnetic field is greatly reduced. Moreover, with the temperature decrease, no modification of the lattice parameters is observed. We then propose an explanation based on the quenching of the unit cell of the film that adopts the in-plane lattice parameters of the substrate and thus, prevents the complete growth of the CO state at low temperature.

cond-mat.mtrl-sci↗