Searcharxiv⌕ Search

arXiv subjects

X. C. Xie

Publications and source records attributed to X. C. Xie.

At least 307 records · Page 17Linked to original sources
arXiv2002

Coulomb-enhanced dynamic localization and Bell state generation in coupled quantum dots

We investigate the dynamics of two interacting electrons in coupled quantum dots driven by an AC field. We find that the two electrons can be trapped in one of the dots by the AC field, in spite of the strong Coulomb repulsion. In particular, we find that the interaction may enhance the localization effect. We also demonstrate the field excitation procedure to generate the maximally entangled Bell states. The generation time is determined by both analytic and numerical solutions of the time dependent Schrodinger equation.

cond-mat.mes-hall↗
arXiv2002

Spin-Dependent Transport Through An Interacting Quantum Dot

We study the nonequilibrium spin transport through a quantum dot containing two spin levels coupled to the magnetic electrodes. A formula for the spin-dependent current is obtained and is applied to discuss the linear conductance and magnetoresistance in the interacting regime, where the so-called Kondo effect arises. We show that the Kondo resonance and the correlation-induced spin splitting of the dot levels may be systematically controlled by internal magnetization in the electrodes. As a result, when the electrodes are in parallel magnetic configuration, the linear conductance is characterized by two spin-resolved peaks. Furthermore, the presence of the spin-flip process in the dot splits the Kondo resonance into three peaks.

cond-mat.mes-hall↗
arXiv2001

Theory for high spin systems with orbital degeneracy

High-spin systems with orbital degeneracy are studied in the large spin limit. In the absence of Hund's coupling, the classical spin model is mapped onto disconnected orbital systems with spins up and down, respectively. The ground state of the isotropic model is an orbital valence bond state where each bond is an orbital singlet with parallel spins, and neighbouring bonds interact antiferromagnetically. The possible relevance to the transition metal oxides are discussed.

cond-mat.str-el↗
arXiv2001

Dephasing Effect in Photon-Assisted Resonant Tunneling through Quantum Dots

We analyze dephasing in single and double quantum dot systems. The decoherence is introduced by the Büttiker model with current conserving fictitious voltage leads connected to the dots. By using the non-equilibrium Green function method, we investigate the dephasing effect on the tunneling current. It is shown that a finite dephasing rate leads to observable effects. The result can be used to measure dephasing rates in quantum dots.

cond-mat.mes-hall↗
arXiv2001

The Droplet State and the Compressibility Anomaly in Dilute 2D Electron Systems

We investigate the space distribution of carrier density and the compressibility of two-dimensional (2D) electron systems by using the local density approximation. The strong correlation is simulated by the local exchange and correlation energies. A slowly varied disorder potential is applied to simulate the disorder effect. We show that the compressibility anomaly observed in 2D systems which accompanies the metal-insulator transition can be attributed to the formation of the droplet state due to disorder effect at low carrier densities.

cond-mat.str-el↗
arXiv2001

Percolative conductivity and critical exponents in mixed-valent manganites

Recent experiments have shown that some colossal magnetoresistance (CMR) materials exhibit a percolation transition. The conductivity exponent varies substantially with or without an external magnetic field. This finding prompted us to carry out theoretical studies of percolation transition in CMR systems. We find that the percolation transition coincides with the magnetic transition and this causes a large effect of a magnetic field on the percolation transition. Using real-space-renormalization method and numerical calculations for two-dimensional (2D) and three-dimensional (3D) models, we obtain the conductivity exponent $t$ to be 5.3 (3D) and 3.3 (2D) without a magnetic field, and 1.7 (3D) and 1.4 (2D) with a magnetic field.

cond-mat.str-el↗
arXiv2000

Dephasing and Metal-Insulator Transition

The metal-insulator transition (MIT) observed in two-dimensional (2D) systems is apparently contradictory to the well known scaling theory of localization. By investigating the conductance of disordered one-dimensional systems with a finite phase coherence length, we show that by changing the phase coherence length or the localization length, it is possible to observe the transition from insulator-like behavior to metal-like behavior, and the transition is a crossover between the quantum and classical regimes. The resemblance between our calculated results and the experimental findings of 2D MIT suggests that the observed metallic phase could be the result of a finite dephasing rate.

cond-mat.str-el↗
arXiv2000

The Edge-State Theory of Integer-Quantum-Hall-Effect to Insulator Transition

Direct transitions, driven by disorder, from several integral quantum Hall states to an insulator have been observed in experiment. This finding is enigmatic in light of a theoretical phase diagram, based on rather general considerations, that predicts a sequence of transitions in which the integer $n$ characterizing the Hall conductivity is reduced successively by unity, eventually going from $n=1$ into an insulator. In this work, we suggest that the direct transition occurs because, in certain parameter regime, the edge states of different Landau levels are strongly coupled and behave as a single edge state. It is indicated under what conditions successive transitions may be seen.

cond-mat.mes-hall↗
arXiv2000

Metal-insulator transition in CMR materials

We report on resistivity measurements in La$_{0.67}$Ca$_{0.33}$MnO$_{3}$ and Nd$_{0.7}$Sr$_{0.3}$MnO$_{3}$ thin films in order to elucidate the underlying mechanism for the CMR behavior. The experimental results are analyzed in terms of quantum phase transition ideas to study the nature of the metal-insulator transition in manganese oxides. Resistivity curves as functions of magnetization for various temperatures show the absence of scaling behavior expected in a continuous quantum phase transition, which leads us to conclude that the observed metal-insulator transition is most likely a finite temperature crossover phenomenon.

cond-mat.str-el↗
arXiv1999

A Droplet State in an Interacting Two-Dimensional Electron System

It is well known that the dielectric constant of two-dimensional (2D) electron system goes negative at low electron densities. A consequence of the negative dielectric constant could be the formation of the droplet state. The droplet state is a two-phase coexistence region of high density liquid and low density "gas". In this paper, we carry out energetic calculations to study the stability of the droplet ground state. The possible relevance of the droplet state to recently observed 2D metal-insulator transition is also discussed.

cond-mat.mes-hall↗
arXiv1999

Meta-Percolation and Metal-Insulator Transition in Two Dimensions

According to the scaling theory of localization, all quantum electronic states are localized in two-dimensional (2D) systems. One consequence of the theory is that there is no quantum percolation transition in 2D. However, in a real system at a finite temperature, electron phase coherent length is finite and the system is between quantum and classical. We find, in such a 2D system, a metal-insulator transition (MIT) caused by a novel type of percolation, meta-percolation. The relevance to recently observed 2D MIT is also discussed.

cond-mat.dis-nn↗
arXiv1999

Metal-insulator transition in a multilayer system with a strong magnetic field

We study the Anderson localization in a weakly coupled multilayer system with a strong magnetic field perpendicular to the layers. The phase diagram of 1/3 flux quanta per plaquette is obtained. The phase diagram shows that a three-dimensional quantum Hall effect phase exists for a weak on-site disorder. For intermediate disorder, the system has insulating and normal metallic phases separated by a mobility edge. At an even larger disorder, all states are localized and the system is an insulator. The critical exponent of the localization length is found to be $ν=1.57\pm0.10$.

cond-mat↗
arXiv1998

The level shifting induced negative magnetoresistance in the nearest-neighbor hopping conduction

We propose a new mechanism of negative magnetoresistance in non-magnetic granular materials in which electron transport is dominated by hopping between two nearest-neighbor clusters. We study the dependence of magnetoresistance on temperature and separation between neighboring clusters. At a small separation we find a negative magnetoresistance at low temperatures and it changes over to a positive value as temperature increases. For a fixed temperature, magnetoresistance changes from negative to positive when the cluster separation increases. The change of magnetoresistance $ΔR/R$ can be more than 80% at low temperatures.

cond-mat↗
arXiv1998

First principles theory of inelastic currents in a scanning tunneling microscope

A first principles theory of inelastic tunneling between a model probe tip and an atom adsorbed on a surface is presented, extending the elastic tunneling theory of Tersoff and Hamann. The inelastic current is proportional to the change in the local density of states at the center of the tip due to the addition of the adsorbate. We use the theory to investigate the vibrational heating of an adsorbate below an STM tip. We calculate the desorption rate of H from Si(100)-H(2$\times$1) as function of the sample bias and tunnel current, and find excellent agreement with recent experimental data.

cond-mat.mtrl-sci↗
arXiv1997

A New Liquid Phase and Metal-Insulator Transition in Si MOSFETs

We argue that there is a new liquid phase in the two-dimensional electron system in Si MOSFETs at low enough electron densities. The recently observed metal-insulator transition results as a crossover from the percolation transition of the liquid phase through the disorder landscape in the system below the liquid-gas critical temperature. The consequences of our theory are discussed for variety of physical properties relevant to the recent experiments.

cond-mat.str-el↗
arXiv1997

Negative Magnetoresistance in the Nearest-neighbor Hopping Conduction

We propose a size effect which leads to the negative magnetoresistance in granular metal-insulator materials in which the hopping between two nearest neighbor clusters is the main transport mechanism. We show that the hopping probability increases with magnetic field. This is originated from the level crossing in a few-electron cluster. Thus, the overlap of electronic states of two neighboring clusters increases, and the negative magnetoresistance is resulted.

cond-mat↗
arXiv1997

In-plane Magnetic Field Induced Kosterlitz-Thouless Type Metal Insulator Transition in Coupled Double Quantum Wells

We study the localization properties in coupled double quantum wells with an in-plane magnetic field. The localization length is directly calculated using a transfer matrix technique and finite size scaling analysis. We show that the system maps into a 2D XY model and undergoes a disorder driven Kosterlitz-Thouless type metal-insulator transition depending on the coupling strength between the two-dimensional layers and the magnitude of the in-plane magnetic field. For a system with fixed disorder, the metallic regime appears to be a window in the magnetic field - coupling strength plane. Experimental implications of the transition will be discussed.

cond-mat↗