arXiv subjects

Yasuhiro Utsumi

Publications and source records attributed to Yasuhiro Utsumi.

49 records · Page 3Linked to original sources

arXiv2006

Full Counting Statistics for Number of Electrons Dwelling in a Quantum Dot

Motivated by recent real-time electron counting experiments, we evaluate the full counting statistics (FCS) for the probability distribution of the electron number inside a quantum dot which is weakly coupled to source and drain leads. A non-Gaussian exponential distribution appears when there is no dot state close to the lead chemical potentials. We propose the measurement of the joint probability distribution of current and electron number, which reveals correlations between the two observables. We also show that for increasing strength of tunneling, the quantum fluctuations qualitatively change the probability distribution of the electron number. In this paper, we derive the cumulant generating functions (CGFs) of the joint probability distribution for several cases. The Keldysh generating functional approach is adopted to obtain the CGFs for the resonant-level model and for the single-electron transistor in the intermediate conductance regime. The general form for the CGF of the joint probability distribution is provided within the Markov approximation in an extension of the master equation approach [D. A. Bagrets, and Yu. V. Nazarov, Phys. Rev. B {\bf 67}, 085316 (2003)].

cond-mat.mes-hall↗

arXiv2005

Full Counting Statistics for a Single-Electron Transistor, Non-equilibrium Effects at Intermediate Conductance

We evaluate the current distribution for a single-electron transistor with intermediate strength tunnel conductance. Using the Schwinger-Keldysh approach and the drone (Majorana) fermion representation we account for the renormalization of system parameters. Nonequilibrium effects induce a lifetime broadening of the charge-state levels, which suppress large current fluctuations.

cond-mat.mes-hall↗

arXiv2005

Full counting-statistics in a single-electron transistor in the presence of nonequilibrium quantum fluctuations of charge

Using the Schwinger-Keldysh approach and the drone (Majorana) fermion representation, we evaluate current distribution in a single-electron transistor in a regime where a total tunnel resistance is small. Nonequilibrium quantum fluctuations of charge induce a lifetime broadening of charge-state level, as well as renormalization of system parameters. We find that the lifetime broadening effect may suppress the probability of relatively large current.

cond-mat.mes-hall↗

arXiv2005

Nonequilibrium Kondo Effect in a Quantum Dot Coupled to Ferromagnetic Leads

We study the Kondo effect in the electron transport through a quantum dot coupled to ferromagnetic leads, using a real-time diagrammatic technique which provides a systematic description of the nonequilibrium dynamics of a system with strong local electron correlations. We evaluate the theory in an extension of the `resonant tunneling approximation', introduced earlier, by introducing the self-energy of the off-diagonal component of the reduced propagator in spin space. In this way we develop a charge and spin conserving approximation that accounts not only for Kondo correlations but also for the spin splitting and spin accumulation out of equilibrium. We show that the Kondo resonances, split by the applied bias voltage, may be spin polarized. A left-right asymmetry in the coupling strength and/or spin polarization of the electrodes significantly affects both the spin accumulation and the weight of the split Kondo resonances out of equilibrium. The effects are observable in the nonlinear differential conductance. We also discuss the influence of decoherence on the Kondo resonance in the frame of the real-time formulation.

cond-mat.mes-hall↗

arXiv2003

Twisted exchange interaction between localized spins embedded in a one- or two-dimensional electron gas with Rashba spin-orbit coupling

We study theoretically the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction in one- and two-dimensions in presence of a Rashba spin-orbit (SO) coupling. We show that rotation of the spin of conduction electrons due to SO coupling causes a twisted RKKY interaction between localized spins which consists of three different terms: Heisenberg, Dzyaloshinsky-Moriya, and Ising interactions. We also show that the effective spin Hamiltonian reduces to the usual RKKY interaction Hamiltonian in the twisted spin space where the spin quantization axis of one localized spin is rotated.

cond-mat.mes-hall↗

arXiv2003

Indirect Exchange Interaction between two Quantum Dots in an Aharonov-Bohm Ring

We investigate the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction between two spins located at two quantum dots embedded in an Aharonov-Bohm (AB) ring. In such a system the RKKY interaction, which oscillates as a function of the distance between two local spins, is affected by the flux. For the case of the ferromagnetic RKKY interaction, we find that the amplitude of AB oscillations is enhanced by the Kondo correlations and an additional maximum appears at half flux, where the interaction is switched off. For the case of the antiferromagnetic RKKY interaction, we find that the phase of AB oscillations is shifted by pi, which is attributed to the formation of a singlet state between two spins for the flux value close to integer value of flux.

cond-mat.mes-hall↗

arXiv2002

The effect of large quantum fluctuation on the noise of a single-electron transistor

We theoretically investigate the noise of a single-electron transistor in the regime of large quantum fluctuation of charge out of equilibrium. We show that the charge noise is suppressed due to the charge renormalization caused by the quantum fluctuation. However the fluctuation is not strong enough to wash out the charge quantization. We find that the renormalization effect reduces the performance of a single-electron electrometer.

cond-mat.mes-hall↗

arXiv2002

Noise of a single-electron transistor in the regime of large quantum fluctuations of island charge out of equilibrium

By using the drone-fermion representation and the Schwinger-Keldysh approach, we calculate the current noise and the charge noise for a single-electron transistor in the non-equilibrium state in the presence of large quantum fluctuation of island charge. Our result interpolates between those of the "orthodox theory" and the "co-tunneling theory". We find the following effects which are not treated by previous theories: (i) At zero temperature T=0 and at finite applied bias voltage $|eV| \gg T_{K}$, where $T_{K}$ is the "Kondo temperature", we find the Fano factor is suppressed more than the suppression caused by Coulomb correlation both in the Coulomb blockade regime and in the sequential tunneling regime. (ii) For $T \gg |eV|/2 \gg T_{K}$, the current noise in the presence of large charge fluctuation is modified and deviates from the prediction of the orthodox theory. However, the Fano factor coincides with that of the orthodox theory and is proportional to the temperature. (iii) For $eV, T \lesssim T_{K}$, the charge noise is suppressed due to the renormalization of system parameters caused by quantum fluctuation of charge. We interpret it in terms of the modification of the "unit" of the island charge.

cond-mat.mes-hall↗

arXiv2002

The current and the charge noise of a single-electron transistor in the regime of large charge fluctuations out of equilibrium

By using the Schwinger-Keldysh approach, we evaluate the current noise and the charge noise of the single-electron transistor (SET) in the regime of large charge fluctuations caused by large tunneling conductance. Our result interpolates between previous theories; the "orthodox" theory and the "co-tunneling theory". We find that the life-time broadening effect suppresses the Fano factor below the value estimated by the previous theories. We also show that the large tunnel conductance does not reduce the energy sensitivity so much. Our results demonstrate quantitatively that SET electrometer can be used as the high-sensitivity and high-speed device for quantum measurements.

cond-mat.mes-hall↗

arXiv2002

Parity Effect and Tunnel Magnetoresistance of Ferromagnet / Superconductor / Ferromagnet Single-Electron Tunneling Transistors

We theoretically study the tunnel magnetoresistance(TMR) of ferromagnet / superconductor / ferromagnet single-electron tunneling transistors with a special attention to the parity effect. It is shown that in the plateau region, there is no spin accumulation in the island even at finite bias voltage. However, the information of the injected spin is carried by the excess electron and thus the TMR exists. The spin relaxation rate of the excess electron can be estimated from the TMR. We also show that the TMR increases with decreasing the size of the superconducting island.

cond-mat.supr-con↗

arXiv2002

Charge fluctuation between even and odd states of a superconducting island

We theoretically investigate effects of quantum fluctuation between even and odd charge states on the transport properties of a normal-superconducting-normal single-electron tunneling transistor. The charge fluctuation is discussed beyond the orthodox theory. We find that the charging energy renormalization enhances the parity effect: The Coulomb blockade regime for odd state is reduced and that for even state is widened. We show that the renormalization factor can be obtained by measuring the peak position of the conductance. The renormalization factor reduces with increasing the applied bias voltage.

cond-mat.mes-hall↗

arXiv2001

Dephasing of a qubit coupled with a point-contact detector

The dephasing of a qubit coupled with a point-contact detector is theoretically studied. We calculate the time evolution of the reduced density matrix of qubit by using the perturbation expansion. We show that the dephasing rate is proportional to the temperature at zero bias-voltage, while it is proportional to the bias-voltage when the bias-voltage is large. We also evaluate the dephasing rate by using the real time renormalization group method and show that the higher order processes of the particle-hole excitation enhances dephasing of qubit.

cond-mat↗

arXiv2001

The effect of charge fluctuation on a normal-superconducting-normal single-electron transistor

We theoretically investigate quantum fluctuation of charge between even and odd states of a normal-superconducting-normal single-electron tunneling transistor. It is shown that due to the superconducting gap, the charge fluctuation in the Coulomb blockade regime for even state is larger than that for odd state. We show that large energy correction in the former regime caused by charge fluctuation can be explained by considering the charging energy renormalization.

cond-mat.mes-hall↗