arXiv subjects

Young Hee Lee

Publications and source records attributed to Young Hee Lee.

At least 37 records · Page 2Linked to original sources

arXiv2020

Enhancement in optically induced ultrafast THz response of MoSe2MoS2 heterobilayer

THz conductivity of large area MoS2 and MoSe2 monolayers as well as their vertical heterostructure, MoSe2MoS2 is measured in the 0.3-5 THz frequency range. Compared to the monolayers, the ultrafast THz reflectivity of the MoSe2MoS2 heterobilayer is enhanced many folds when optically excited above the direct band gap energies of the constituting monolayers. The free carriers generated in the heterobilayer evolve with the characteristic times found in each of the two monolayers. Surprisingly, the same enhancement is recorded in the ultrafst THz reflectivity of the heterobilayer when excited below the MoS2 bandgap energy. A mechanism accounting for these observations is proposed.

physics.app-ph↗

arXiv2020

Bandgap renormalization in monolayer MoS_2 on CsPbBr_3 quantum dot via charge transfer at room temperature

Many-body effect and strong Coulomb interaction in monolayer transition metal dichalcogenides lead to shrink the intrinsic bandgap, originating from the renormalization of electrical/optical bandgap, exciton binding energy, and spin-orbit splitting. This renormalization phenomenon has been commonly observed at low temperature and requires high photon excitation density. Here, we present the augmented bandgap renormalization in monolayer MoS_2 anchored on CsPbBr_3 perovskite quantum dots at room temperature via charge transfer. The amount of electrons significantly transferred from perovskite gives rise to the large plasma screening in MoS_2. The bandgap in heterostructure is red-shifted by 84 meV with minimal pump fluence, the highest bandgap renormalization in monolayer MoS_2 at room temperature, which saturates with further increase of pump fluence. We further find that the magnitude of bandgap renormalization inversely relates to Thomas-Fermi screening length. This provides plenty of room to explore the bandgap renormalization within existing vast libraries of large bandgap van der Waals heterostructure towards practical devices such as solar cells, photodetectors and light-emitting-diodes.

cond-mat.mes-hall↗

arXiv2020

Carrier Multiplication via Photocurrent Measurements in Dual-Gated MoTe_2

Although van der Waals layered transition metal dichalcogenides from transient absorption spectroscopy have successfully demonstrated an ideal carrier multiplication (CM) performance with an onset of nearly 2Eg,interpretation of the CM effect from the optical approach remains unresolved owing to the complexity of many-body electron-hole pairs. We demonstrate the CM effect through simple photocurrent measurements by fabricating the dual-gate P-N junction of a MoTe2 film on a transparent substrate. Electrons and holes were efficiently extracted by eliminating the Schottky barriers in the metal contact and minimizing multiple reflections. The photocurrent was elevated proportionately to the excitation energy. The boosted quantum efficiency confirms the multiple electron-hole pair generation of >2Eg, consistent with CM results from an optical approach, pushing the solar cell efficiency beyond the Shockley-Queisser limit.

cond-mat.mes-hall↗

arXiv2020

Substitutional VSn nanodispersed in MoS$_2$ film for Pt-scalable catalyst

Among transition metal dichalcogenides (TMdCs) as alternatives for Pt-based catalysts, metallic-TMdCs catalysts have highly reactive basal-plane but are unstable. Meanwhile, chemically stable semiconducting-TMdCs show limiting catalytic activity due to their inactive basal-plane. Here, we propose metallic vanadium sulfide (VSn) nanodispersed in a semiconducting MoS2 film (V-MoS2) as an efficient catalyst. During synthesis, vanadium atoms are substituted into hexagonal monolayer MoS2 to form randomly distributed VSn units. The V-MoS2 film on a Cu electrode exhibits Pt-scalable catalytic performance; current density of 1000 mA cm-2 at 0.6 V, overpotential of -0.06 V at a current density of 10 mA cm-2 and exchange current density of 0.65 mA cm-2 at 0 V with excellent cycle stability for hydrogen-evolution-reaction (HER). The high intrinsic HER performance of V-MoS2 is explained by the efficient electron transfer from the Cu electrode to chalcogen vacancies near vanadium sites with optimal Gibbs free energy (-0.02 eV). This study adds insight into ways to engineer TMdCs at the atomic-level to boost intrinsic catalytic activity for hydrogen evolution.

cond-mat.mtrl-sci↗

arXiv2020

Epitaxial single-crystal growth of transition metal dichalcogenide monolayers via atomic sawtooth Au surface

Growth of two-dimensional van der Waals layered single-crystal (SC) films is highly desired to manifest intrinsic material sciences and unprecedented devices for industrial applications. While wafer-scale SC hexagonal boron nitride film has been successfully grown, an ideal growth platform for diatomic transition metal dichalcogenide (TMdC) film has not been established to date. Here, we report the SC growth of TMdC monolayers in a centimeter scale via atomic sawtooth gold surface as a universal growth template. Atomic tooth-gullet surface is constructed by the one-step solidification of liquid gold, evidenced by transmission-electron-microscopy. Anisotropic adsorption energy of TMdC cluster, confirmed by density-functional calculations, prevails at the periodic atomic-step edge to yield unidirectional epitaxial growth of triangular TMdC grains, eventually forming the SC film, regardless of Miller indices. Growth using atomic sawtooth gold surface as a universal growth template is demonstrated for several TMdC monolayer films, including WS2, WSe2, MoS2, MoSe2/WSe2 heterostructure, and W1-xMoxS2 alloy. Our strategy provides a general avenue for the SC growth of diatomic van der Waals heterostructures in a wafer scale, to further facilitate the applications of TMdCs in post silicon technology.

cond-mat.mtrl-sci↗

arXiv2020

Band restructuring of ordered/disordered blue TiO2 for visible photocatalyst

Black TiO2 with/without noble metal has been proposed for visible photocatalyst, still leaving poor catalyst efficiency. Alternatively, phase-mixed TiO2 such as anatase and rutile has been commonly used for visible catalysts with the inevitable inclusion of noble metal. Here, we perform a noble metal-free visible photocatalyst blue TiO2 with type-II band-aligned ordered anatase/disordered rutile structure, via phase-selective reduction with alkali metals. The changed band alignment in this heterostructure was identified by absorption and ultraviolet photoemission spectroscopy, which was further confirmed by transient charge separation. The band alignment of type-I and type-II was clearly restructured by converting from ordered to disordered phase with a prolonged reduction period and as followed light absorbance enhancement also observed. Initiated type-I in a pristine sample, the type-II was organized from disordered rutile phase in 3-day Li-reduction. The type-II disordered rutile TiO2 heterostructure exhibits a remarkable photocatalytic performance by 55 times higher than conventional P25 TiO2 in solar-light driven hydrogen evolution reaction owing to an efficient electron and hole separation of type-II heterojunction. Furthermore, this restructured heterojunction type-II TiO2 demanded 10 times less Pt amount as a co-catalyst for the comparable photocatalytic performance, compared to Pt decorated type-I pristine anatase/rutile phase-mixed TiO2.

cond-mat.mtrl-sci↗

arXiv2020

Real-space imaging of acoustic plasmons in large-area CVD graphene

An acoustic plasmonic mode in a graphene-dielectric-metal heterostructure has recently been spotlighted as a superior platform for strong light-matter interaction. It originates from the coupling of graphene plasmon with its mirror image and exhibits the largest field confinement in the limit of a nm-thick dielectric. Although recently detected in the far-field regime, optical near-fields of this mode are yet to be observed and characterized. Direct optical probing of the plasmonic fields reflected by the edges of graphene via near-field scattering microscope reveals a relatively small damping rate of the mid-IR acoustic plasmons in our devices, which allows for their real-space mapping even with unprotected, chemically grown, large-area graphene at ambient conditions. We show an acoustic mode that is twice as confined - yet 1.4 times less damped - compared to the graphene surface plasmon under similar conditions. We also image the resonant acoustic Bloch state in a 1D array of gold nanoribbons responsible for the high efficiency of the far-field coupling. Our results highlight the importance of acoustic plasmons as an exceptionally promising platform for large-area graphene-based optoelectronic devices operating in mid-IR.

physics.app-ph↗

arXiv2020

Aharonov Bohm Effect in Graphene Fabry Pérot Quantum Hall Interferometers

Quantum interferometers are powerful tools for probing the wave-nature and exchange statistics of indistinguishable particles. Of particular interest are interferometers formed by the chiral, one-dimensional (1D) edge channels of the quantum Hall effect (QHE) that guide electrons without dissipation. Using quantum point contacts (QPCs) as beamsplitters, these 1D channels can be split and recombined, enabling interference of charged particles. Such quantum Hall interferometers (QHIs) can be used for studying exchange statistics of anyonic quasiparticles. In this study we develop a robust QHI fabrication technique in van der Waals (vdW) materials and realize a graphene-based Fabry-Pérot (FP) QHI. By careful heterostructure design, we are able to measure pure Aharonov-Bohm (AB) interference effect in the integer QHE, a major technical challenge in finite size FP interferometers. We find that integer edge modes exhibit high visibility interference due to relatively large velocities and long phase coherence lengths. Our QHI with tunable QPCs presents a versatile platform for interferometer studies in vdW materials and enables future experiments in the fractional QHE.

cond-mat.mes-hall↗

arXiv2020

Modulation Doping via a 2d Atomic Crystalline Acceptor

Two-dimensional (2d) nano-electronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined with \textit{ab initio} calculations establish the large work function and narrow bands of $α$-RuCl$_3$ enable modulation doping of exfoliated, chemical vapor deposition (CVD), and molecular beam epitaxy (MBE) materials. Short-ranged lateral doping (${\leq}65\ \text{nm}$) and high homogeneity are achieved in proximate materials with a single layer of \arucl. This leads to the highest monolayer graphene (mlg) mobilities ($4,900\ \text{cm}^2/ \text{Vs}$) at these high hole densities ($3\times10^{13}\ \text{cm}^{-2}$); and yields larger charge transfer to bilayer graphene (blg) ($6\times10^{13}\ \text{cm}^{-2}$). We further demonstrate proof of principle optical sensing, control via twist angle, and charge transfer through hexagonal boron nitride (hBN).

cond-mat.mtrl-sci↗

arXiv2020

Evidence of itinerant holes for long-range magnetic order in tungsten diselenide semiconductor with vanadium dopants

One primary concern in diluted magnetic semiconductors (DMSs) is how to establish a long-range magnetic order with a low magnetic doping concentration to maintain the gate tunability of the host semiconductor, as well as to increase Curie temperature. Two-dimensional van der Waals semiconductors have been recently investigated to demonstrate the magnetic order in DMSs; however, a comprehensive understanding of the mechanism responsible for the gate-tunable long-range magnetic order in DMSs has not been achieved yet. Here, we introduce a monolayer tungsten diselenide (WSe2) semiconductor with V dopants to demonstrate the long-range magnetic order through itinerant spin-polarized holes. The V atoms are sparsely located in the host lattice by substituting W atoms, which is confirmed by scanning tunneling microscopy and high-resolution transmission electron microscopy. The V impurity states and the valence band edge states are overlapped, which is congruent with density functional theory calculations. The field-effect transistor characteristics reveal the itinerant holes within the hybridized band; this clearly resembles the Zener model. Our study gives an insight into the mechanism of the long-range magnetic order in V-doped WSe2, which can also be used for other magnetically doped semiconducting transition metal dichalcogenides.

cond-mat.mtrl-sci↗

arXiv2020

Room-temperature ferromagnetism in monolayer WSe2 semiconductor via vanadium dopant

Diluted magnetic semiconductors including Mn-doped GaAs are attractive for gate-controlled spintronics but Curie transition at room temperature with long-range ferromagnetic order is still debatable to date. Here, we report the room-temperature ferromagnetic domains with long-range order in semiconducting V-doped WSe2 monolayer synthesized by chemical vapor deposition. Ferromagnetic order is manifested using magnetic force microscopy up to 360K, while retaining high on/off current ratio of ~105 at 0.1% V-doping concentration. The V-substitution to W sites keep a V-V separation distance of 5 nm without V-V aggregation, scrutinized by high-resolution scanning transmission-electron microscopy, which implies the possibility of the Ruderman-Kittel-Kasuya-Yoshida interaction (or Zener model) by establishing the long-range ferromagnetic order in V-doped WSe2 monolayer through free hole carriers. More importantly, the ferromagnetic order is clearly modulated by applying a back gate. Our findings open new opportunities for using two-dimensional transition metal dichalcogenides for future spintronics.

cond-mat.mtrl-sci↗

arXiv2020

Gate modulation of the long-range magnetic order in a vanadium-doped WSe2 semiconductor

We demonstrate the gate-tunability of the long-range magnetic order in a p-type V-doped WSe2 monolayer using ab initio calculations. We found that at a low V-doping concentration limit, the long-range ferromagnetic order is enhanced by increasing the hole density. In contrast, the short-range antiferromagnetic order is manifested at a high electron density by full compensation of the p-type V doping concentration. The hole-mediated long-range magnetic exchange is ~70 meV, thus strongly suggesting the ferromagnetism in V-doped WSe2 at room temperature. Our findings on strong coupling between charge and spin order in V-doped WSe2 provide plenty of room for multifunctional gate-tunable spintronics.

cond-mat.mtrl-sci↗

arXiv2019

Gate tunable optical absorption and band structure of twisted bilayer graphene

We report the infrared transmission measurement on electrically gated twisted bilayer graphene. The optical absorption spectrum clearly manifests the dramatic changes such as the splitting of inter-linear-band absorption step, the shift of inter-van Hove singularity transition peak, and the emergence of very strong intra-valence (intra-conduction) band transition. These anomalous optical behaviors demonstrate consistently the non-rigid band structure modification created by the ion-gel gating through the layer-dependent Coulomb screening. We propose that this screening-driven band modification is an universal phenomenon that persists to other bilayer crystals in general, establishing the electrical gating as a versatile technique to engineer the band structures and to create new types of optical absorptions that can be exploited in electro-optical device application.

cond-mat.mtrl-sci↗

arXiv2018

Highly Efficient Carrier Multiplication in van der Waals layered Materials

Carrier multiplication (CM), a photo-physical process to generate multiple electron-hole pairs by exploiting excess energy of free carriers, is explored for efficient photovoltaic conversion of photons from the blue solar band, predominantly wasted as heat in standard solar cells. Current state-of-the-art approaches with nanomaterials have demonstrated improved CM but are not satisfactory due to high energy loss and inherent difficulties with carrier extraction. Here, we report ultra-efficient CM in van der Waals (vdW) layered materials that commences at the energy conservation limit and proceeds with nearly 100% conversion efficiency. A small threshold energy, as low as twice the bandgap, was achieved, marking an onset of quantum yield with enhanced carrier generation. Strong Coulomb interactions between electrons confined within vdW layers allow rapid electron-electron scattering to prevail over electron-phonon scattering. Additionally, the presence of electron pockets spread over momentum space could also contribute to the high CM efficiency. Combining with high conductivity and optimal bandgap, these superior CM characteristics identify vdW materials for third-generation solar cell.

cond-mat.mes-hall↗

arXiv2017

Electron-hole pair condensation in Graphene/MoS2 heterointerface

Excitons are electron-hole (e-h) pair quasiparticles, which may form a Bose-Einstein condensate (BEC) and collapse into the phase coherent state at low temperature. However, because of ephemeral strength of pairing, a clear evidence for BEC in electron-hole system has not yet been observed. Here, we report electron-hole pair condensation in graphene (Gr)/MoS2 heterointerface at 10K without magnetic field. As a direct indication of e-h pair condensation, we demonstrate a vanished Hall drag voltage and the resultant divergence of drag resistance. While strong excitons are formed at Gr/MoS2 heterointerface without insulating layer, carrier recombination via interlayer tunneling of carriers is suppressed by the vertical p-Gr/n-MoS2 junction barrier, consequently yielding high BEC temperature of 10K, ~1000 times higher than that of two-dimensional electron gas in III-V quantum wells. The observed excitonic transport is mainly governed by the interfacial properties of the Gr/MoS2 heterostructure, rather than the intrinsic properties of each layer. Our approach with available large-area monolayer graphene and MoS2 provides a high feasibility for quantum dissipationless electronics towards integration.

cond-mat.mes-hall↗

arXiv2017

Coulomb drag transistor via graphene/MoS2 heterostructures

Two-dimensional (2D) heterointerfaces often provide extraordinary carrier transport as exemplified by superconductivity or excitonic superfluidity. Recently, double-layer graphene separated by few-layered boron nitride demonstrated the Coulomb drag phenomenon: carriers in the active layer drag the carriers in the passive layer. Here, we propose a new switching device operating via Coulomb drag interaction at a graphene/MoS2 (GM) heterointerface. The ideal van der Waals distance allows strong coupling of the interlayer electron-hole pairs, whose recombination is prevented by the Schottky barrier formed due to charge transfer at the heterointerface. This device exhibits a high carrier mobility (up to ~3,700 cm^2V^-1s^-1) even at room temperature, while maintaining a high on/off current ratio (~10^8), outperforming those of individual layers. In the electron-electron drag regime, graphene-like Shubnikov-de Haas oscillations are observed at low temperatures. Our Coulomb drag transistor could provide a shortcut for the practical application of quantum-mechanical 2D heterostructures at room temperature.

cond-mat.mes-hall↗

arXiv2016

Spin to charge conversion in MoS$_{2}$ monolayer with spin pumping

Layered transition-metal dichalcogenides (TMDs) family are gaining increasing importance due to their unique electronic band structures, promising interplay among light, valley (pseudospin), charge and spin degrees of freedom. They possess large intrinsic spin-orbit interaction which make them most relevant for the emerging field of spin-orbitronics. Here we report on the conversion of spin current to charge current in MoS2 monolayer. Using spin pumping from a ferromagnetic layer (10 nm of cobalt) we find that the spin to charge conversion is highly efficient. Analysis in the frame of the inverse Rashba-Edelstein (RE) effect yields a RE length in excess of 4 nm at room temperature. Furthermore, owing to the semiconducting nature of MoS$_{2}$, it is found that back-gating allows electrical field control of the spin-relaxation rate of the MoS$_{2}$-metallic stack.

cond-mat.mes-hall↗

arXiv2016

Voltage Scaling of Graphene Device on SrTiO3 Epitaxial Thin Film

Electrical transport in monolayer graphene on SrTiO3 (STO) thin film is examined in order to promote gate-voltage scaling using a high-k dielectric material. The atomically flat surface of thin STO layer epitaxially grown on Nb-doped STO single-crystal substrate offers good adhesion between the high-k film and graphene, resulting in nonhysteretic conductance as a function of gate voltage at all temperatures down to 2 K. The two-terminal conductance quantization under magnetic fields corresponding to quantum Hall states survives up to 200 K at a magnetic field of 14 T. In addition, the substantial shift of charge neutrality point in graphene seems to correlate with the temperature-dependent dielectric constant of the STO thin film, and its effective dielectric properties could be deduced from the universality of quantum phenomena in graphene. Our experimental data prove that the operating voltage reduction can be successfully realized due to the underlying high-k STO thin film, without any noticeable degradation of graphene device performance.

cond-mat.mtrl-sci↗