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Yu Han

Publications and source records attributed to Yu Han.

At least 145 records · Page 8Linked to original sources
arXiv2018

Anomaly free cosmological perturbations with generalised holonomy correction in loop quantum cosmology

In the spatially flat case of loop quantum cosmology, the connection $\bar{k}$ is usually replaced by the holonomy $\frac{\sin(\barμk)}{\barμ}$ in the effective theory. In this paper, instead of the $\barμ$ scheme, we use a generalised, undertermined function $g(\bar{k},\bar{p})$ to represent the holonomy and by using the approach of anomaly free constraint algebra we fix all the counter terms in the constraints and find the restriction on the form of $g(\bar{k},\bar{p})$, then we derive the gauge invariant equations of motion of the scalar, tensor and vector perturbations and study the inflationary power spectra with generalised holonomy correction.

gr-qc↗
arXiv2018

Fair Efficiency Comparisons of Decoy-state Quantum Key Distribution Protocols

Secure key rate of decoy-state quantum key distribution protocols has been improved with biased basis choice, however, the security standards and parameters of current protocols are different. As a result, we cannot give an accurate key rate comparison between different kinds of protocols. Taking the schemes based on different formula of secure key rate as examples, we give a fair comparison between typical protocols under universal composable security standard. Through analyzing the relationship of security parameters in post-processing stage and final secure key, we achieve the unified quantification between protocols based on Gottesman-Lo-Lutkenhaus-Preskill formula and the ones under universal composable security. Based on the above research, the impact of different sending length and secure parameters on secure key rate is investigated, meanwhile, we give the dependent relationship between secure key rate and sending length under different secure parameters. Besides, we analyze the importance and conditions of fair comparison. For the first time we give a fair comparison between the protocols based on GLLP formula and smooth entropy, and taking Raymond protocol and Toshiba protocol as examples, we analyze the way for improving secure key rate in the light intensity choice and the single bit error rate estimation method.

quant-ph↗
arXiv2017

Spectral and Energy Efficiency of Cell-Free Massive MIMO Systems with Hardware Impairments

Cell-free massive multiple-input multiple-output (MIMO), with a large number of distributed access points (APs) that jointly serve the user equipments (UEs), is a promising network architecture for future wireless communications. To reduce the cost and power consumption of such systems, it is important to utilize low-quality transceiver hardware at the APs. However, the impact of hardware impairments on cell-free massive MIMO has thus far not been studied. In this paper, we take a first look at this important topic by utilizing well-established models of hardware distortion and deriving new closed-form expressions for the spectral and energy efficiency. These expressions provide important insights into the practical impact of hardware impairments and also how to efficiently deploy cell-free systems. Furthermore, a novel hardware-quality scaling law is presented. It proves that the impact of hardware impairments at the APs vanish as the number of APs grows. Numerical results validate that cell-free massive MIMO systems are inherently resilient to hardware impairments.

cs.IT↗
arXiv2017

Out-of-plane Piezoelectricity and Ferroelectricity in Layered $α$-In2Se3 Nano-flakes

Piezoelectric and ferroelectric properties in the two dimensional (2D) limit are highly desired for nanoelectronic, electromechanical, and optoelectronic applications. Here we report the first experimental evidence of out-of-plane piezoelectricity and ferroelectricity in van der Waals layered $α$-In2Se3 nano-flakes. The non-centrosymmetric R3m symmetry of the $α$-In2Se3 samples is confirmed by scanning transmission electron microscopy, second-harmonic generation, and Raman spectroscopy measurements. Domains with opposite polarizations are visualized by piezo-response force microscopy. Single-point poling experiments suggest that the polarization is potentially switchable for $α$-In2Se3 nano-flakes with thicknesses down to ~ 10 nm. The piezotronic effect is demonstrated in two-terminal devices, where the Schottky barrier can be modulated by the strain-induced piezopotential. Our work on polar $α$-In2Se3, one of the model 2D piezoelectrics and ferroelectrics with simple crystal structures, shows its great potential in electronic and photonic applications.

cond-mat.mtrl-sci↗
arXiv2017

New asymptotic Anti-de Sitter solution with a timelike extra dimension in 5D relativity

In 5D relativity, the usual 4D cosmological constant is determined by the extra dimension. If the extra dimension is spacelike, one can get a positive cosmological constant $Λ$ and a 4D de Sitter (dS) space. In this paper we present that, if the extra dimension is timelike oppositely, the negative $Λ$ will be emerged and the induced 4D space will be an asymptotic Anti-de Sitter (AdS). Under the minimum assumption, we solve the Kaluza-Klein equation $R_{AB} = 0$ in a canonical system and obtain the AdS solution in a general case. The result shows that an AdS space is induced naturally from a Kaluza-Klein manifold on a hypersurface (brane). The Lagrangian of test particle indicates the equation of motion can be geodesics if the 4D metric is independent of extra dimension. The causality is well respected because it is appropriately defined by a null higher dimensional interval. In this 5D relativity, the holographic principle can be used safely because the brane is asymptotic Euclidean AdS in the bulk. We also explore some possible holographic duality implications about the field/operator correspondence and the two-points correlation functions.

gr-qc↗
arXiv2017

Synthesis of Single-crystal-like Nanoporous Carbon Membranes and Their Applications in Overall Water Splitting

Nanoporous graphitic carbon membranes with defined chemical composition and pore architecture are novel nanomaterials that are actively pursued. Compared to easy-to-make porous carbon powders that dominate the porous carbon research and applications in energy generation/conversion and environmental remediation, porous carbon membranes are synthetically more challenging though rather appealing from an application perspective due to their structural integrity, interconnectivity and purity. Here we report a simple bottom-up approach to fabricate large-size, freestanding, porous carbon membranes that feature an unusual single-crystal-like graphitic order and hierarchical pore architecture plus favorable nitrogen doping. When loaded with cobalt nanoparticles, such carbon membranes serve as high-performance carbon-based non-noble metal electrocatalyst for overall water splitting.

cond-mat.mtrl-sci↗
arXiv2016

Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides

Low carrier mobility and high electrical contact resistance are two major obstacles prohibiting explorations of quantum transport in TMDCs. Here, we demonstrate an effective method to establish low-temperature Ohmic contacts in boron nitride encapsulated TMDC devices based on selective etching and conventional electron-beam evaporation of metal electrodes. This method works for most extensively studied TMDCs in recent years, including MoS2, MoSe2, WSe2, WS2, and 2H-MoTe2. Low electrical contact resistance is achieved at 2 K. All of the few-layer TMDC devices studied show excellent performance with remarkably improved field-effect mobilities ranging from 2300 cm2/V s to 16000 cm2/V s, as verified by the high carrier mobilities extracted from Hall effect measurements. Moreover, both high-mobility n-type and p-type TMDC channels can be realized by simply using appropriate contact metals. Prominent Shubnikov-de Haas oscillations have been observed and investigated in these high-quality TMDC devices.

cond-mat.mtrl-sci↗
arXiv2016

Probing the Electronic States in Black Phosphorus Vertical Heterostructures

Atomically thin black phosphorus (BP) is a promising two-dimensional material for fabricating electronic and optoelectronic nano-devices with high mobility and tunable bandgap structures. However, the charge-carrier mobility in few-layer phosphorene (monolayer BP) is mainly limited by the presence of impurity and disorders. In this study, we demonstrate that vertical BP heterostructure devices offer great advantages in probing the electron states of monolayer and few-layer phosphorene at temperatures down to 2 K through capacitance spectroscopy. Electronic states in the conduction and valence bands of phosphorene are accessible over a wide range of temperature and frequency. Exponential band tails have been determined to be related to disorders. Unusual phenomena such as the large temperature-dependence of the electron state population in few-layer phosphorene have been observed and systematically studied. By combining the first-principles calculation, we identified that the thermal excitation of charge trap states and oxidation-induced defect states were the main reasons for this large temperature dependence of the electron state population and degradation of the on-off ratio in phosphorene field-effect transistors.

cond-mat.mtrl-sci↗
arXiv2015

Thickness-dependent Dielectric Constant of Few-layer In2Se3 Nano-flakes

The dielectric constant or relative permittivity of a dielectric material, which describes how the net electric field in the medium is reduced with respect to the external field, is a parameter of critical importance for charging and screening in electronic devices. Such a fundamental material property is intimately related to not only the polarizability of individual atoms, but also the specific atomic arrangement in the crystal lattice. In this letter, we present both experimental and theoretical investigations on the dielectric constant of few-layer In2Se3 nano-flakes grown on mica substrates by van der Waals epitaxy. A nondestructive microwave impedance microscope is employed to simultaneously quantify the number of layers and local electrical properties. The measured dielectric constant increases monotonically as a function of the thickness and saturates to the bulk value at around 6 ~ 8 quintuple layers. The same trend of layer-dependent dielectric constant is also revealed by first-principle calculations. Our results of the dielectric response, being ubiquitously applicable to layered 2D semiconductors, are expected to be significant for this vibrant research field.

cond-mat.mes-hall↗
arXiv2015

Band bending at interfaces between topological insulator Bi2Se3 and transition metals

Interfaces between exfoliated topological insulator Bi2Se3 and several transition metals deposited by sputtering were studied by XPS, SIMS, UPS and contact I-V measurements. Chemically clean interfaces can be achieved when coating Bi2Se3 with a transition metal layer as thin as 1 nm, even without capping. Most interestingly, UPS spectra suggest depletion or inversion in the originally n-type topological insulator near the interface. Strong band bending in the topological insulator requires careful material engineering or electric biasing if one desires to make use of the spin locking in surface states in the bulk gap for potential spintronic applications

cond-mat.mes-hall↗
arXiv2015

Fast Transfer-free Synthesis of High-quality Monolayer Graphene on Insulating Substrates by Simple Rapid Thermal Treatment

The transfer-free synthesis of high-quality, large-area graphene on a given dielectric substrate, which is highly desirable for device applications, remains a significant challenge. In this paper, we report on a simple rapid thermal treatment method for the fast and direct growth of high-quality, large-scale monolayer graphene on a SiO2/Si substrate from solid carbon sources. The stack structure of solid carbon layer/copper film/SiO2 is adopted in the RTT process. The inserted copper film does not only act as an active catalyst for the carbon precursor but also serves as a "filter" that prevents premature carbon dissolution, and thus, contributes to monolayer graphene growth on SiO2/Si. The produced monolayer graphene exhibits high carrier mobility of up to 3000 cm2 V-1s-1 at room temperature and standard half-integer quantum oscillations.

cond-mat.mtrl-sci↗
arXiv2015

Manifestly Gauge Invariant Perturbations of Scalar-Tensor Theories of Gravity

The general relativistic perturbations of scalar-tensor theories (STT) of gravity are studied in a manifestly gauge invariant Hamiltonian formalism. After the derivation of the Hamiltonian equations of motion in this framework, the gauge invariant formalism is used to compute the evolution equations of linear perturbations around a general relativistic spacetime background in the Jordan frame. These equations are then specialized to the case of a flat FRW cosmological background. Furthermore, the equivalence between the Jordan frame and the Einstein frame of STT in the manifestly gauge invariant Hamiltonian formalism is analyzed, and it is shown that also in this framework they can be related by a conformal transformation. Finally, the obtained evolution equations for the linear perturbations in our formalism are compared with those in the standard cosmological perturbation theory. It turns out that the perturbation equations in the two different formalisms coincide with each other in a suitable limit.

gr-qc↗
arXiv2014

High quality sandwiched black phosphorus heterostructure and its quantum oscillations

Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides have attracted great attention because of the rich physics and potential applications in next-generation nano-sized electronic devices. Recently, atomically thin black phosphorus (BP) has become a new member of the 2D materials family with high theoretical mobility and tunable bandgap structure. However, degradation of properties under atmospheric conditions and high-density charge traps in BP have largely limited its mobility (~400 cm2/Vs at room temperature) and thus restricted its future applications. Here, we report the fabrication of stable BN-BP-BN heterostructures by encapsulating atomically thin BP between hexagonal boron nitride (BN) layers to realize ultraclean BN-BP interfaces which allow a record-high field-effect mobility ~1350 cm2/Vs at room temperature and on-off ratios over 10^5. At low temperatures, the mobility reaches ~2700 cm2/Vs and quantum oscillations in BP 2D hole gas are observed at low magnetic fields. Importantly, the BN-BP-BN heterostructure can effectively avoid the quality degradation of BP in ambient condition.

cond-mat.mtrl-sci↗
arXiv2014

Detection of Interlayer Interaction in Few-layer Graphene through Landau Level Spectroscopy

We demonstrate that surface relaxation, which is insignificant in trilayer graphene, starts to manifest in Bernal-stacked tetralayer graphene. Bernal-stacked few-layer graphene has been investigated by analyzing its Landau level spectra through quantum capacitance measurements. We find that in trilayer graphene, the interlayer interaction parameters were similar to that of graphite. However, in tetralayer graphene, the hopping parameters between the bulk and surface bilayers are quite different. This shows a direct evidence for the surface relaxation phenomena. In spite of the fact that the Van der Waals interaction between the carbon layers is thought to be insignificant, we suggest that the interlayer interaction is an important factor in explaining the observed results and the symmetry-breaking effects in graphene sublattice are not negligible.

cond-mat.mtrl-sci↗
arXiv2014

High-Quality BN-Graphene-BN Nanoribbon Capacitors Modulated by Graphene Side-gate Electrodes

High-quality BN-Graphene-BN nanoribbon capacitors with double side-gates of graphene are experimentally realized. Graphene electronic properties can be significantly modulated by the double side-gates. The modulation effects are very obvious and followed the metallic electrode behavior of numerical simulations, while the theoretically predicted negative quantum capacitance was not observed, possibility due to the over-estimated or weakened interactions between the graphene nanoribbon and side-gate electrodes.

cond-mat.mes-hall↗
arXiv2014

Probing the Electron States and Metal-Insulator Transition Mechanisms in Atomically Thin MoS2 Based on Vertical Heterostructures

The metal-insulator transition (MIT) is one of the remarkable electrical transport properties of atomically thin molybdenum disulphide (MoS2). Although the theory of electron-electron interactions has been used in modeling the MIT phenomena in MoS2, the underlying mechanism and detailed MIT process still remain largely unexplored. Here, we demonstrate that the vertical metal-insulator-semiconductor (MIS) heterostructures built from atomically thin MoS2 (monolayers and multilayers) are ideal capacitor structures for probing the electron states in MoS2. The vertical configuration of MIS heterostructures offers the added advantage of eliminating the influence of large impedance at the band tails and allows the observation of fully excited electron states near the surface of MoS2 over a wide excitation frequency (100 Hz-1 MHz) and temperature range (2 K- 300 K). By combining capacitance and transport measurements, we have observed a percolation-type MIT, driven by density inhomogeneities of electron states, in the vertical heterostructures built from monolayer and multilayer MoS2. In addition, the valence band of thin MoS2 layers and their intrinsic properties such as thickness-dependence screening abilities and band gap widths can be easily accessed and precisely determined through the vertical heterostructures.

cond-mat.mtrl-sci↗
arXiv2014

Connection Dynamics for Higher Dimensional Scalar-Tensor Theories of Gravity

The scalar-tensor theories of gravity in spacetime dimensions $D+1>2$ are studied. By doing Hamiltonian analysis, we obtain the geometrical dynamics of the theories from their Lagrangian. The Hamiltonian formalism indicates that the theories are naturally divided into two sectors by the coupling parameter $ω$. The Hamiltonian structure in both sectors are similar to the corresponding structure of 4-dimensional cases. It turns out that there is a symplectic reduction from the canonical structure of $so(D+1)$ Yang-Mills theories coupled to the scalar field to the canonical structure of the geometrical scalar-tensor theories. Therefore the non-perturbative loop quantum gravity techniques can also be applied to the scalar-tensor theories in $D+1$ dimensions based on their connection-dynamical formalism.

gr-qc↗