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arXiv · 1110.6431

Single-shot measurement of triplet-singlet relaxation in a Si/SiGe double quantum dot

J. R. Prance·Zhan Shi·C. B. Simmons·D. E. Savage·M. G. Lagally·L. R. Schreiber·L. M. K. Vandersypen·Mark Friesen·Robert Joynt·S. N. Coppersmith·M. A. Eriksson
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Abstract

We investigate the lifetime of two-electron spin states in a few-electron Si/SiGe double dot. At the transition between the (1,1) and (0,2) charge occupations, Pauli spin blockade provides a readout mechanism for the spin state. We use the statistics of repeated single-shot measurements to extract the lifetimes of multiple states simultaneously. At zero magnetic field, we find that all three triplet states have equal lifetimes, as expected, and this time is ~10 ms. At non-zero field, the T0 lifetime is unchanged, whereas the T- lifetime increases monotonically with field, reaching 3 seconds at 1 T.

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J. R. Prance, Zhan Shi, C. B. Simmons, D. E. Savage, M. G. Lagally, L. R. Schreiber, L. M. K. Vandersypen, Mark Friesen, Robert Joynt, S. N. Coppersmith, M. A. Eriksson. 2011-11-02. Single-shot measurement of triplet-singlet relaxation in a Si/SiGe double quantum dot. https://doi.org/10.1103/physrevlett.108.046808

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