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arXiv · 1512.04484

Gate-tunable diode and photovoltaic effect in an organic-2D layered material p-n junction

Saül Vélez·David Ciudad·Joshua Island·Michele Buscema·Oihana Txoperena·Subir Parui·Gary A. Steele·Fèlix Casanova·Herre S. J. van der Zant·Andres Castellanos-Gomez·Luis E. Hueso
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Abstract

The semiconducting p-n junction is a simple device structure with great relevance for electronic and optoelectronic applications. The successful integration of low-dimensional materials in electronic circuits has opened the way forward for producing gate-tunable p-n junctions. In that context, here we present an organic (Cu-phthalocyanine)-2D layered material (MoS2) hybrid p-n junction with both gate-tunable diode characteristics and photovoltaic effect. Our proof-of-principle devices show multifunctional properties with diode rectifying factors of up to 10^4, while under light exposure they exhibit photoresponse with a measured external quantum efficiency of ~ 11 %. As for their photovoltaic properties, we found open circuit voltages of up to 0.6 V and optical-to-electrical power conversion efficiency of 0.7 %. The extended catalogue of known organic semiconductors and two-dimensional materials offer the prospect for tailoring the properties and the performance of the resulting devices, making organic-2D p-n junctions promising candidates for future technological applications.

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Saül Vélez, David Ciudad, Joshua Island, Michele Buscema, Oihana Txoperena, Subir Parui, Gary A. Steele, Fèlix Casanova, Herre S. J. van der Zant, Andres Castellanos-Gomez, Luis E. Hueso. 2015-12-14. Gate-tunable diode and photovoltaic effect in an organic-2D layered material p-n junction. https://doi.org/10.1039/c5nr04083c

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