Topological Phase Transition-Induced Tri-Axial Vector Magnetoresistance in (Bi1-xInx)2Se3 Nanodevices

Minhao Zhang; Huaiqiang Wang; Kejun Mu; Pengdong Wang; Wei Niu; Shuai Zhang; Guiling Xiao; Yequan Chen; Tong Tong; Dongzhi Fu; Xuefeng Wang; Haijun Zhang; Fengqi Song; Feng Miao; Zhe Sun; Zhengcai Xia; Xinran Wang; Yongbing Xu; Baigeng Wang; Dingyu Xing; Rong Zhang

doi:10.1021/acsnano.7b08054

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arXiv · 1801.01224

Topological Phase Transition-Induced Tri-Axial Vector Magnetoresistance in (Bi1-xInx)2Se3 Nanodevices

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Abstract

We report the study of a tri-axial vector magnetoresistance (MR) in nonmagnetic (Bi1-xInx)2Se3 nanodevices at the composition of x = 0.08. We show a dumbbell-shaped in-plane negative MR up to room temperature as well as a large out-of-plane positive MR. MR at three directions is about in a -3%: -1%: 225% ratio at 2 K. Through both the thickness and composition-dependent magnetotransport measurements, we show that the in-plane negative MR is due to the topological phase transition enhanced intersurface coupling near the topological critical point. Our devices suggest the great potential for room-temperature spintronic applications, for example, vector magnetic sensors.

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Minhao Zhang, Huaiqiang Wang, Kejun Mu, Pengdong Wang, Wei Niu, Shuai Zhang, Guiling Xiao, Yequan Chen, Tong Tong, Dongzhi Fu, Xuefeng Wang, Haijun Zhang, Fengqi Song, Feng Miao, Zhe Sun, Zhengcai Xia, Xinran Wang, Yongbing Xu, Baigeng Wang, Dingyu Xing, Rong Zhang. 2018-01-04. Topological Phase Transition-Induced Tri-Axial Vector Magnetoresistance in (Bi1-xInx)2Se3 Nanodevices. https://doi.org/10.1021/acsnano.7b08054

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