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arXiv · 2004.02622

Atomic Layer Deposition of SiO$_2$-GeO$_2$ multilayers

Jordi Antoja-Lleonart·Silang Zhou·Kit de Hond·Gertjan Koster·Guus Rijnders·Beatriz Noheda
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Abstract

Despite its interest for CMOS applications, Atomic Layer Deposition (ALD) of GeO$_{2}$ thin films, by itself or in combination with SiO$_{2}$, has not been widely investigated yet. Here we report the ALD growth of SiO$_{2}$/GeO$_{2}$ multilayers on Silicon substrates using a so far unreported Ge precursor. The characterization of multilayers with various periodicities reveals successful layer-by-layer growth with electron density contrast and absence of chemical intermixing, down to a periodicity of 2 atomic layers.

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Jordi Antoja-Lleonart, Silang Zhou, Kit de Hond, Gertjan Koster, Guus Rijnders, Beatriz Noheda. 2020-04-06. Atomic Layer Deposition of SiO$_2$-GeO$_2$ multilayers. https://doi.org/10.1063/5.0009844

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