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arXiv · 2110.04876

Erbium-Implanted Materials for Quantum Communication Applications

Paul Stevenson·Christopher M Phenicie·Isaiah Gray·Sebastian P Horvath·Sacha Welinski·Austin M Ferrenti·Alban Ferrier·Philippe Goldner·Sujit Das·Ramamoorthy Ramesh·Robert J Cava·Nathalie P de Leon·Jeff D Thompson
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Abstract

Erbium-doped materials can serve as spin-photon interfaces with optical transitions in the telecom C-band, making them an exciting class of materials for long-distance quantum communication. However, the spin and optical coherence times of Er3+ ions are limited by currently available host materials, motivating the development of new Er3+-containing materials. Here, we demonstrate the use of ion implantation to efficiently screen prospective host candidates, and show that disorder introduced by ion implantation can be mitigated through post-implantation thermal processing to achieve inhomogeneous linewidths comparable to bulk linewidths in as-grown samples. We present optical spectroscopy data for each host material, which allows us to determine the level structure of each site, allowing us to compare the environments of Er3+ introduced via implantation and via doping during growth. We demonstrate that implantation can generate a range of local environments for Er3+, including those observed in bulk-doped materials, and that the populations of these sites can be controlled with thermal processing.

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Paul Stevenson, Christopher M Phenicie, Isaiah Gray, Sebastian P Horvath, Sacha Welinski, Austin M Ferrenti, Alban Ferrier, Philippe Goldner, Sujit Das, Ramamoorthy Ramesh, Robert J Cava, Nathalie P de Leon, Jeff D Thompson. 2021-10-10. Erbium-Implanted Materials for Quantum Communication Applications. https://doi.org/10.1103/physrevb.105.224106

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