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arXiv · 2201.09730

Thin-Film Lithium Niobate based Dual-Polarization IQ modulator for Single-Carrier 1.6 Tb/s Transmission

Xuanhao Wang·Chenglin Shang·An Pan·Xingran Cheng·Tao Gui·Shuai Yuan·Chengcheng Gui·Keshuang Zheng·Peijie Zhang·Xiaolu Song·Yanbo Li·Liangchuan Li·Cheng Zeng·Jinsong Xia
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Abstract

We successfully demonstrate a monolithic integrated dual-polarization (DP) IQ modulator based on thin-film lithium niobate (TFLN) platform with a silicon substrate, which consists of IQ modulators, spot-size converters (SSCs) and a polarization rotator combiner (PRC). After coupled with polarization maintaining fibers, the measured insertion loss of the modulator is 12 dB. In addition, we experimentally achieve a single-carrier 1.6 Tb/s net bitrate transmission.

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Xuanhao Wang, Chenglin Shang, An Pan, Xingran Cheng, Tao Gui, Shuai Yuan, Chengcheng Gui, Keshuang Zheng, Peijie Zhang, Xiaolu Song, Yanbo Li, Liangchuan Li, Cheng Zeng, Jinsong Xia. 2022-01-21. Thin-Film Lithium Niobate based Dual-Polarization IQ modulator for Single-Carrier 1.6 Tb/s Transmission. https://doi.org/10.1063/5.0097296

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