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arXiv · 2308.00834

Characterization of superconducting through-silicon vias as capacitive elements in quantum circuits

Thomas M. Hazard·Wayne Woods·Danna Rosenberg·Rabi Das·Cyrus F. Hirjibehedin·David K. Kim·Jeffery Knecht·Justin Mallek·Alexander Melville·Bethany M. Niedzielski·Kyle Serniak·Katrina M. Sliwa·Donna Ruth-Yost·Jonilyn L. Yoder·William D. Oliver·Mollie E. Schwartz
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Abstract

The large physical size of superconducting qubits and their associated on-chip control structures presents a practical challenge towards building a large-scale quantum computer. In particular, transmons require a high-quality-factor shunting capacitance that is typically achieved by using a large coplanar capacitor. Other components, such as superconducting microwave resonators used for qubit state readout, are typically constructed from coplanar waveguides which are millimeters in length. Here we use compact superconducting through-silicon vias to realize lumped element capacitors in both qubits and readout resonators to significantly reduce the on-chip footprint of both of these circuit elements. We measure two types of devices to show that TSVs are of sufficient quality to be used as capacitive circuit elements and provide a significant reductions in size over existing approaches.

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Thomas M. Hazard, Wayne Woods, Danna Rosenberg, Rabi Das, Cyrus F. Hirjibehedin, David K. Kim, Jeffery Knecht, Justin Mallek, Alexander Melville, Bethany M. Niedzielski, Kyle Serniak, Katrina M. Sliwa, Donna Ruth-Yost, Jonilyn L. Yoder, William D. Oliver, Mollie E. Schwartz. 2023-08-01. Characterization of superconducting through-silicon vias as capacitive elements in quantum circuits. https://arxiv.org/abs/2308.00834

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