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arXiv · 2407.13370

Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy

Patrick Fiorenza·Marco Zignale·Edoardo. Zanetti·Mario S. Alessandrino·Beatrice Carbone·Alfio Guarnera·Mario Saggio·Filippo Giannazzo·Fabrizio Roccaforte
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Abstract

This paper reports the results presented in an invited poster during the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2023 held in Sorrento, Italy. The suitability of scanning probe methods based on atomic force microscopy (AFM) measurements is explored to investigate with high spatial resolution the elementary cell of 4H-SiC power MOSFETs. The two-dimensional (2D) cross-sectional maps demonstrated a high spatial resolution of about 5 nm using the SSRM capabilities. Furthermore, the SCM capabilities enabled visualizing the fluctuations of charge carrier concentration across the different parts of the MOSFETs elementary cell.

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Patrick Fiorenza, Marco Zignale, Edoardo. Zanetti, Mario S. Alessandrino, Beatrice Carbone, Alfio Guarnera, Mario Saggio, Filippo Giannazzo, Fabrizio Roccaforte. 2024-07-18. Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy. https://arxiv.org/abs/2407.13370

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