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arXiv · 2410.07680

Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach

Yann Jousseaume·Piyush Kumar·Marianne Etzelmüller Bathen·François Cauwet·Ulrike Grossner·Gabriel Ferro
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Abstract

Mesa- and trench-patterned surfaces of 4H-SiC(0001) 4{\textdegree}off wafers were structured in macrosteps using Si melting in a SiC-Si-SiC sandwich configuration. Si spreading difficulties were observed in the case of trench-patterned samples while the attempts on mesa-patterned ones were more successful. In the latter case, parallel macrosteps were formed on both the dry-etched and unetched areas though these macrosteps rarely cross the patterns edges. The proposed mechanism involved preferential etching at Si-C bilayer step edges and fast lateral propagation along the [1120] direction.

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Yann Jousseaume, Piyush Kumar, Marianne Etzelmüller Bathen, François Cauwet, Ulrike Grossner, Gabriel Ferro. 2024-10-10. Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach. https://doi.org/10.4028/p-auz0oi

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