High Breakdown Field Multi-kV UWBG AlGaN Transistors

Seungheon Shin; Kyle Liddy; Jon Pratt; Can Cao; Yinxuan Zhu; Brianna A. Klein; Andrew Armstrong; Andrew A. Allerman; Siddharth Rajan

arXiv · 2604.06372

High Breakdown Field Multi-kV UWBG AlGaN Transistors

Seungheon Shin·Kyle Liddy·Jon Pratt·Can Cao·Yinxuan Zhu·Brianna A. Klein·Andrew Armstrong·Andrew A. Allerman·Siddharth Rajan

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Abstract

We demonstrate high-performance UWBG AlGaN PolFETs exhibiting a state-of-the-art combination of nearly 1 A/mm on-state current (~ 960 mA/mm) and large breakdown field (> 4.8 MV/cm) in high carrier density (1.15 x 1013 cm-2). Multi-kV robustness is successfully demonstrated exhibiting 1.28 and 2.17 kV by utilizing a gate-connected field plate structures in 3.9 and 6.8 {\mu}m LGD, corresponding to the extremely low specific on-resistance of 1.25 and 2.86 m{\Omega}cm2, respectively. High RF performance is also achieved, providing fT and fMAX, of 8.5 and 15 GHz, respectively, for 3.9 {\mu}m LGD. These results highlight UWBG AlGaN as a platform for both high-voltage RF and power applications.

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Seungheon Shin, Kyle Liddy, Jon Pratt, Can Cao, Yinxuan Zhu, Brianna A. Klein, Andrew Armstrong, Andrew A. Allerman, Siddharth Rajan. 2026-04-07. High Breakdown Field Multi-kV UWBG AlGaN Transistors. https://arxiv.org/abs/2604.06372

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