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Raman Measurements and Stress Analysis in Gallium Ion Implanted Gallium Nitride Epitaxial Layers on Sapphire

S. Mal·A. Singha·S. Dhara·A. Roy
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Abstract

In this article, we estimate hydrostatic stress developed in gallium ion implanted gallium nitride epitaxial layers using Raman measurements. We have calculated deformation potential constants for $E_2$(high) mode in these epi-layers. The presence of a polar phonon-plasmon coupling in these systems has also been demonstrated. In as-implanted samples, with an increase in implantation fluence, we have observed disorder-activated Raman scattering.

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S. Mal, A. Singha, S. Dhara, A. Roy. 2006-06-27. Raman Measurements and Stress Analysis in Gallium Ion Implanted Gallium Nitride Epitaxial Layers on Sapphire. https://doi.org/10.1016/j.tsf.2006.07.018

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