arXiv · physics/0411143
Simulation of Heavily Irradiated Silicon Pixel Sensors and Comparison with Test Beam Measurements
Abstract
Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in the ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of charge trapping observed in the data.
Explore related subjects
Keep this discovery
Vincenzo Chiochia, Morris Swartz, Daniela Bortoletto, Lucien Cremaldi, Susanna Cucciarelli, Andrei Dorokhov, Christoph Hoermann, Dongwook Kim, Marcin Konecki, Danek Kotlinski, Kirill Prokofiev, Christian Regenfus, Tilman Rohe, David A. Sanders, Seunghee Son, Thomas Speer. 2005-05-04. Simulation of Heavily Irradiated Silicon Pixel Sensors and Comparison with Test Beam Measurements. https://doi.org/10.1109/tns.2005.852748
Cite the original work for its findings. Save a collection to share your selection of sources.