arXiv subjects

Aristide Lemaître

Publications and source records attributed to Aristide Lemaître.

104 records · Page 6Linked to original sources

arXiv2008

Optical bistability in a GaAs based polariton diode

We report on a new type of optical nonlinearity in a polariton p-i-n microcavity. Abrupt switching between the strong and weak coupling regime is induced by controlling the electric field within the cavity. As a consequence bistable cycles are observed for low optical powers (2-3 orders of magnitude less than for Kerr induced bistability). Signatures of switching fronts propagating through the whole 300 microns x 300 microns mesa surface are evidenced.

cond-mat.other↗

arXiv2008

Field-Driven Domain-Wall Dynamics in GaMnAs Films with Perpendicular Anisotropy

We combine magneto-optical imaging and a magnetic field pulse technique to study domain wall dynamics in a ferromagnetic (Ga,Mn)As layer with perpendicular easy axis. Contrary to ultrathin metallic layers, the depinning field is found to be smaller than the Walker field, thereby allowing for the observation of the steady and precessional flow regimes. The domain wall width and damping parameters are determined self-consistently. The damping, 30 times larger than the one deduced from ferromagnetic resonance, is shown to essentially originate from the non-conservation of the magnetization modulus. An unpredicted damping resonance and a dissipation regime associated with the existence of horizontal Bloch lines are also revealed.

cond-mat.mtrl-sci↗

arXiv2008

Strain-Control of the magnetic anisotropy in (Ga,Mn)(As,P) ferromagnetic semiconductor layers

A small fraction of phosphorus (up to 10 %) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or even change its sign, resulting in strong modifications of the magnetic anisotropy. In particular a reorientation of the easy axis toward the growth direction is observed for high P concentration. It offers an interesting alternative to the metamorphic approach, in particular for magnetization reversal experiments where epitaxial defects stongly affect the domain wall propagation.

cond-mat.mtrl-sci↗

arXiv2007

Microcavity polariton light emitting diode

Cavity polaritons have been shown these last years to exhibit a rich variety of non-linear behaviors which could be used in new polariton based devices. Operation in the strong coupling regime under electrical injection remains a key step toward a practical polariton device. We report here on the realization of a polariton based light emitting diode using a GaAs microcavity with doped Bragg mirrors. Both photocurrent and electroluminescence spectra are governed by cavity polaritons up to 100 K.

cond-mat.mtrl-sci↗

arXiv2007

Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities

Polariton lasing is demonstrated on the zero dimensional states of single GaAs/GaAlAs micropillar cavities. Under non resonant excitation, the measured polariton ground state occupancy is found to be as large as $10^{4}$. Changing the spatial excitation conditions, competition between several polariton lasing modes is observed, ruling out Bose-Einstein condensation. When the polariton state occupancy increases, the emission blueshift is the signature of self-interaction within the half-light half-matter polariton lasing mode.

cond-mat.mtrl-sci↗

arXiv2007

Photon lasing in a GaAs microcavity: similarities with a polariton condensate

We study experimentally the lasing regime of a GaAs based microcavity sample under strong optical pumping. The very same sample exhibits the strong coupling regime at low excitation power with a Rabi splitting as large as 15 meV. We show that some features which may be considered as experimental evidence of polariton Bose Einstein condensation are also observed in the weak coupling regime when the cavity is behaving as a regular photon laser. In particular, the emission pattern in the lasing regime displays a sharp peak near the energy minimum followed by a Boltzmann distribution at higher energies.

cond-mat.mtrl-sci↗

arXiv2007

Determination of the micromagnetic parameters in (Ga,Mn)As using domain theory

The magnetic domain structure and magnetic properties of a ferromagnetic (Ga,Mn)As epilayer with perpendicular magnetic easy-axis are investigated. We show that, despite strong hysteresis, domain theory at thermodynamical equilibrium can be used to determine the micromagnetic parameters. Combining magneto-optical Kerr microscopy, magnetometry and ferromagnetic resonance measurements, we obtain the characteristic parameter for magnetic domains $λ_c$, the domain wall width and specific energy, and the spin stiffness constant as a function of temperature. The nucleation barrier for magnetization reversal and the Walker breakdown velocity for field-driven domain wall propagation are also estimated.

cond-mat.mtrl-sci↗

arXiv2007

Magnetic patterning of (Ga,Mn)As by hydrogen passivation

We present an original method to magnetically pattern thin layers of (Ga,Mn)As. It relies on local hydrogen passivation to significantly lower the hole density, and thereby locally suppress the carrier-mediated ferromagnetic phase. The sample surface is thus maintained continuous, and the minimal structure size is of about 200 nm. In micron-sized ferromagnetic dots fabricated by hydrogen passivation on perpendicularly magnetized layers, the switching fields can be maintained closer to the continuous film coercivity, compared to dots made by usual dry etch techniques.

cond-mat.mtrl-sci↗

arXiv2007

Evolution of the magnetic anisotropy with carrier density in hydrogenated (Ga,Mn)As

The magnetic properties of (Ga,Mn)As thin films depend on both the Mn doping level and the carrier concentration. Using a post growth hydrogenation process we show that it is possible to decrease the hole density from 1.1021 cm-3 to <1017 cm-3 while maintaining the manganese concentration constant. For such a series of films we have investigated the variation of the magnetization, the easy and hard axes of magnetization, the critical temperatures, the coercive fields and the magnetocrystalline anisotropy constants as a function of temperature using magnetometry, ferromagnetic resonance and magneto-transport measurements. In particular, we evidenced that magnetic easy axes flipped from out-of-plane [001] to in-plane [100] axis, followed by the <110> axes, with increasing hole density and temperature. Our study concluded on a general agreement with mean-field theory predictions of the expected easy axis reversals, and of the weight of uniaxial and cubic anisotropies in this material.

cond-mat.mtrl-sci↗

arXiv2006

Evidence for excitonic polarons in InAs/GaAs quantum dots

We investigate the interband transitions in several ensembles of self-assembled InAs/GaAs quantum dots by using photoluminescence excitation spectroscopy under strong magnetic field. Well defined resonances are observed in the spectra. A strong anticrossing between two transitions is observed in all samples, which cannot be accounted for by a purely excitonic model. The coupling between the mixed exciton-LO phonon states is calculated using the Fröhlich Hamiltonian. The excitonic polaron energies as well as the oscillator strengths of the interband transitions are determined. An anticrossing is predicted when two exciton-LO phonon states have close enough energies with phonon occupations which differ by one. A good agreement is found between the calculations and the experimental data evidencing the existence of excitonic polarons.

cond-mat.mtrl-sci↗

arXiv2006

Magnetic properties and domain structure of (Ga,Mn)As films with perpendicular anisotropy

The ferromagnetism of a thin GaMnAs layer with a perpendicular easy anisotropy axis is investigated by means of several techniques, that yield a consistent set of data on the magnetic properties and the domain structure of this diluted ferromagnetic semiconductor. The magnetic layer was grown under tensile strain on a relaxed GaInAs buffer layer using a procedure that limits the density of threading dislocations. Magnetometry, magneto-transport and polar magneto-optical Kerr effect (PMOKE) measurements reveal the high quality of this layer, in particular through its high Curie temperature (130 K) and well-defined magnetic anisotropy. We show that magnetization reversal is initiated from a limited number of nucleation centers and develops by easy domain wall propagation. Furthermore, MOKE microscopy allowed us to characterize in detail the magnetic domain structure. In particular we show that domain shape and wall motion are very sensitive to some defects, which prevents a periodic arrangement of the domains. We ascribed these defects to threading dislocations emerging in the magnetic layer, inherent to the growth mode on a relaxed buffer.

cond-mat.mtrl-sci↗

arXiv2006

Hole-LO phonon interaction in InAs/GaAs quantum dots

We investigate the valence intraband transitions in p-doped self-assembled InAs quantum dots using far-infrared magneto-optical technique with polarized radiation. We show that a purely electronic model is unable to account for the experimental data. We calculate the coupling between the mixed hole LO-phonon states using the Fröhlich Hamiltonian, from which we determine the polaron states as well as the energies and oscillator strengths of the valence intraband transitions. The good agreement between the experiments and calculations provides strong evidence for the existence of hole-polarons and demonstrates that the intraband magneto-optical transitions occur between polaron states.

cond-mat.other↗

arXiv2006

Tuning the ferromagnetic properties of hydrogenated GaMnAs

Hydrogenation and posthydrogenation annealings have been used as a very efficient tool to tune the hole density over a wide range, at fixed magnetic moment concentration, in thin GaMnAs layers. Reduction of the hole density resulted in strong modifications of their ferromagnetic properties. In particular, we observed in magnetotransport experiments the decrease of the Curie temperature, along with modifications of the magnetic anisotropy, a behavior consistent with the mean-field theory.

cond-mat.mtrl-sci↗

arXiv2005

Dynamic nuclear polarization of a single charge-tunable InAs/GaAs quantum dot

We report on the dynamic nuclear polarization of a single charge-tunable self-assembled InAs/GaAs quantum dot in a longitudinal magnetic field of $\sim$0.2T. The hyperfine interaction between the optically oriented electron and nuclei spins leads to the polarization of the quantum dot nuclei measured by the Overhauser-shift of the singly-charged excitons ($X^{+}$ and $X^{-}$). When going from $X^{+}$ to $X^{-}$, we observe a reversal of this shift which reflects the average electron spin optically written down in the quantum dot either in the $X^{+}$ state or in the final state of $X^{-}$ recombination. We discuss a theoretical model which indicates an efficient depolarization mechanism for the nuclei limiting their polarization to ~10%.

cond-mat.other↗