arXiv subjects

D. Schuh

Publications and source records attributed to D. Schuh.

At least 73 records · Page 4Linked to original sources

arXiv2007

Symmetry and spin dephasing in (110)-grown quantum wells

Symmetry and spin dephasing of in (110)-grown GaAs quantum wells (QWs) are investigated applying magnetic field induced photogalvanic effect (MPGE) and time-resolved Kerr rotation. We show that MPGE provides a tool to probe the symmetry of (110)-grown quantum wells. The photocurrent is only observed for asymmetric structures but vanishes for symmetric QWs. Applying Kerr rotation we prove that in the latter case the spin relaxation time is maximal, therefore these structures set upper limit of spin dephasing in GaAs QWs. We also demonstrate that structure inversion asymmetry can be controllably tuned to zero by variation of delta-doping layer position.

cond-mat.mes-hall↗

arXiv2007

Exciton condensate at a total filling factor of 1 in Corbino 2D electron bilayers

Magneto-transport and drag measurements on a quasi-Corbino 2D electron bilayer at the systems total filling factor 1 (v_tot=1) reveal a drag voltage that is equal in magnitude to the drive voltage as soon as the two layers begin to form the expected v_tot=1 exciton condensate. The identity of both voltages remains present even at elevated temperatures of 0.25 K. The conductance in the current carrying layer vanishes only in the limit of strong coupling between the two layers and at T->0 K which suggests the presence of an excitonic circular current.

cond-mat.mes-hall↗

arXiv2007

Dependence of spin dephasing on initial spin polarization in a high-mobility two-dimensional electron system

We have studied the spin dynamics of a high-mobility two-dimensional electron system in a GaAs/Al_{0.3}Ga_{0.7}As single quantum well by time-resolved Faraday rotation and time-resolved Kerr rotation in dependence on the initial degree of spin polarization, P, of the electrons. By increasing the initial spin polarization from the low-P regime to a significant P of several percent, we find that the spin dephasing time, $T_2^\ast$, increases from about 20 ps to 200 ps; Moreover, $T_2^\ast$ increases with temperature at small spin polarization but decreases with temperature at large spin polarization. All these features are in good agreement with theoretical predictions by Weng and Wu [Phys. Rev. B {\bf 68}, 075312 (2003)]. Measurements as a function of spin polarization at fixed electron density are performed to further confirm the theory. A fully microscopic calculation is performed by setting up and numerically solving the kinetic spin Bloch equations, including the D'yakonov-Perel' and the Bir-Aronov-Pikus mechanisms, with {\em all} the scattering explicitly included. We reproduce all principal features of the experiments, i.e., a dramatic decrease of spin dephasing with increasing $P$ and the temperature dependences at different spin polarizations.

cond-mat.mtrl-sci↗

arXiv2007

Magneto-gyrotropic photogalvanic effects due to inter-subband absorption in quantum wells

We report on the observation of the magneto-photogalvanic effect (MPGE) due to inter-subband transitions in (001)-oriented GaAs quantum wells. This effect is related to the gyrotropic properties of the structures. It is shown that inter-subband absorption of linearly polarized radiation may lead to spin-related as well as spin independent photocurrents if an external magnetic field is applied in the plane of the quantum well. The experimental results are analyzed in terms of the phenomenological theory and microscopic models of MPGE based on either asymmetric optical excitation or asymmetric relaxation of carriers in k-space. We observed resonant photocurrents not only at oblique incidence of radiation but also at normal incidence demonstrating that conventionally applied selection rules for the inter-subband optical transitions are not rigorous.

cond-mat.mtrl-sci↗

arXiv2007

Detection of large magneto-anisotropy of electron spin dephasing in a high-mobility two-dimensional electron system in a $[001]$ GaAs/AlGaAs quantum well

In time-resolved Faraday rotation experiments we have detected an inplane anisotropy of the electron spin-dephasing time (SDT) in an $n$--modulation-doped GaAs/Al$_{0.3}$Ga$_{0.7}$As single quantum well. The SDT was measured with magnetic fields of $B\le 1$ T, applied in the $[110]$ and $[1\bar{1}0]$ inplane crystal directions of the GaAs quantum well. For fields along $[1\bar{1}0]$, we have found an up to a factor of about 2 larger SDT than in the perpendicular direction. Fully microscopic calculations, by numerically solving the kinetic spin Bloch equations considering the D'yakonov-Perel' and the Bir-Aronov-Pikus mechanisms, reproduce the experimental findings quantitatively. This quantitative analysis of the data allowed us to determine the relative strengths of Rashba and Dresselhaus terms in our sample. Moreover, we could estimate the SDT for spins aligned in the $[110]$ {\em inplane} direction to be on the order of several nanoseconds, which is up to two orders of magnitude larger than that in the perpendicular {\em inplane} direction.

cond-mat.mtrl-sci↗

arXiv2007

Micropatterned Electrostatic Traps for Indirect Excitons in Coupled GaAs Quantum Wells

We demonstrate an electrostatic trap for indirect excitons in a field-effect structure based on coupled GaAs quantum wells. Within the plane of a double quantum well indirect excitons are trapped at the perimeter of a SiO2 area sandwiched between the surface of the GaAs heterostructure and a semitransparent metallic top gate. The trapping mechanism is well explained by a combination of the quantum confined Stark effect and local field enhancement. We find the one-dimensional trapping potentials in the quantum well plane to be nearly harmonic with high spring constants exceeding 10 keV/cm^2.

cond-mat.mes-hall↗

arXiv2007

Effect of initial spin polarization on spin dephasing and electron g factor in a high-mobility two-dimensional electron system

We have investigated the spin dynamics of a high-mobility two-dimensional electron system (2DES) in a GaAs--Al$_{0.3}$Ga$_{0.7}$As single quantum well by time-resolved Faraday rotation (TRFR) in dependence on the initial degree of spin polarization, $P$, of the 2DES. From $P\sim 0$ to $P\sim 30$ %, we observe an increase of the spin dephasing time, $T_2^\ast$, by an order of magnitude, from about 20 ps to 200 ps, in good agreement with theoretical predictions by Weng and Wu [Phys. Rev. B {\bf 68}, 075312 (2003)]. Furthermore, by applying an external magnetic field in the Voigt configuration, also the electron $g$ factor is found to decrease for increasing $P$. Fully microscopic calculations, by numerically solving the kinetic spin Bloch equations considering the D'yakonov-Perel' and the Bir-Aronov-Pikus mechanisms, reproduce the most salient features of the experiments, {\em i.e}., a dramatic decrease of spin dephasing and a moderate decrease of the electron $g$ factor with increasing $P$. We show that both results are determined dominantly by the Hartree-Fock contribution of the Coulomb interaction.

cond-mat.mtrl-sci↗

arXiv2007

Novel metallic and insulating states at a bent quantum Hall junction

A non-planar geometry for the quantum Hall (QH) effect is studied, whereby two quantum Hall (QH) systems are joined at a sharp right angle. When both facets are at equal filling factor nu the junction hosts a channel with non-quantized conductance, dependent on nu. The state is metallic at nu = 1/3, with conductance along the junction increasing as the temperature T drops. At nu = 1, 2 it is strongly insulating, and at nu = 3, 4 shows only weak T dependence. Upon applying a dc voltage bias along the junction, the differential conductance again shows three different behaviors. Hartree calculations of the dispersion at the junction illustrate possible explanations, and differences from planar QH structures are highlighted.

cond-mat.mes-hall↗

arXiv2006

Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions

We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed two-fold anisotropy of the resistance can be switched by reversing the bias voltage, suggesting that the effect originates from the interference of the spin-orbit coupling at the interfaces. Corresponding model calculations reproduce the experimental findings very well.

cond-mat.mes-hall↗

arXiv2006

Spin photocurrents and circular photon drag effect in (110)-grown quantum well structures

We report on the study of spin photocurrents in (110)-grown quantum well structures. Investigated effects comprise the circular photogalvanic effect and so far not observed circular photon drag effect. The experimental data can be described by an analytical expression derived from a phenomenological theory. A microscopic model of the circular photon drag effect is developed demonstrating that the generated current has spin dependent origin.

cond-mat.mes-hall↗

arXiv2006

Rashba and Dresselhaus Spin-Splittings in Semiconductor Quantum Wells Measured by Spin Photocurrents

The spin-galvanic effect and the circular photogalvanic effect induced by terahertz radiation are applied to determine the relative strengths of Rashba and Dresselhaus band spin-splitting in (001)-grown GaAs and InAs based two dimensional electron systems. We observed that shifting the $δ$-doping plane from one side of the quantum well to the other results in a change of sign of the photocurrent caused by Rashba spin-splitting while the sign of the Dresselhaus term induced photocurrent remains. The measurements give the necessary feedback for technologists looking for structures with equal Rashba and Dresselhaus spin-splittings or perfectly symmetric structures with zero Rashba constant.

cond-mat.mes-hall↗

arXiv2006

Bias dependent inversion of tunneling magnetoresistance in Fe/GaAs/Fe tunnel junctions

We investigated spin dependent transport through Fe/GaAs/Fe tunnel junctions. The tunneling magnetoresistance effect (TMR) was probed for different types of Fe/GaAs interfaces. For interfaces cleaned by hydrogen plasma the TMR effect is increased and observable at room temperature. If an epitaxial Fe/GaAs(001) interface is involved, the tunnel junction exhibits a bias dependent inversion of the TMR effect. This is a first experimental signature for band structure effects at a Fe/GaAs interface and relevant for spin injection experiments.

cond-mat.mes-hall↗

arXiv2006

Vertical quantum wire realized with double cleaved-edge overgrowth

A quantum wire is fabricated on (001)-GaAs at the intersection of two overgrown cleaves. The wire is contacted at each end to n+ GaAs layers via two-dimensional (2D) leads. A sidegate controls the density of the wire revealing conductance quantization. The step height is strongly reduced from 2e^2/h due to the 2D-lead series resistance. We characterize the 2D density and mobility for both cleave facets with four-point measurements. The density on the first facet is modulated by the substrate potential, depleting a 2um wide strip that defines the wire length. Micro-photoluminescence shows an extra peak consistent with 1D electron states at the corner.

cond-mat.mes-hall↗

arXiv2006

Classical-to-stochastic Coulomb blockade cross-over in aluminum arsenide wires

We report low-temperature differential conductance measurements in aluminum arsenide cleaved-edge overgrown quantum wires in the pinch-off regime. At zero source-drain bias we observe Coulomb blockade conductance resonances that become vanishingly small as the temperature is lowered below $250 {\rm mK}$. We show that this behavior can be interpreted as a classical-to-stochastic Coulomb blockade cross-over in a series of asymmetric quantum dots, and offer a quantitative analysis of the temperature-dependence of the resonances lineshape. The conductance behavior at large source-drain bias is suggestive of the charge density wave conduction expected for a chain of quantum dots.

cond-mat.mes-hall↗

arXiv2006

Drift mobility of long-living excitons in coupled GaAs quantum wells

We observe high-mobility transport of indirect excitons in coupled GaAs quantum wells. A voltage-tunable in-plane potential gradient is defined for excitons by exploiting the quantum confined Stark effect in combination with a lithographically designed resistive top gate. Excitonic photoluminescence resolved in space, energy, and time provides insight into the in-plane drift dynamics. Across several hundreds of microns an excitonic mobility of >10^5 cm2/eVs is observed for temperatures below 10 K. With increasing temperature the excitonic mobility decreases due to exciton-phonon scattering.

cond-mat.other↗

arXiv2005

Four-point measurements of n- and p-type two-dimensional systems fabricated with cleaved-edge overgrowth

We demonstrate a contact design that allows four-terminal magnetotransport measurements of cleaved-edge overgrown two-dimensional electron and hole systems. By lithographically patterning and etching a bulk-doped surface layer, finger-shaped leads are fabricated, which contact the two-dimensional systems on the cleave facet. Both n- and p-type two-dimensional systems are demonstrated at the cleaved edge, using Si as either donor or acceptor, dependent on the growth conditions. Four-point measurements of both gated and modulation-doped samples yield fractional quantum Hall features for both n- and p-type, with several higher-order fractions evident in n-type modulation-doped samples.

cond-mat.mes-hall↗

arXiv2005

Anomalous magnetoresistance peak in (110) GaAs two-dimensional holes: Evidence for Landau-level spin-index anticrossings

We measure an anomalous magnetoresistance peak within the lowest Landau level (nu = 1) minimum of a two-dimensional hole system on (110) GaAs. Self-consistent calculations of the valence band mixing show that the two lowest spin-index Landau levels anticross in a perpendicular magnetic field B consistent with where the experimental peak is measured, Bp. The temperature dependence of the anomalous peak height is interpreted as an activated behavior across this anticrossing gap. Calculations of the spin polarization in the lowest Landau levels predict a rapid switch from about -3/2 to +3/2 spin at the anticrossing. The peak position Bp is shown to be affected by the confinement electrostatics, and the utility of a tunable anticrossing position for spintronics applications is discussed.

cond-mat.mes-hall↗

arXiv2005

Aluminum arsenide cleaved-edge overgrown quantum wires

We report conductance measurements in quantum wires made of aluminum arsenide, a heavy-mass, multi-valley one-dimensional (1D) system. Zero-bias conductance steps are observed as the electron density in the wire is lowered, with additional steps observable upon applying a finite dc bias. We attribute these steps to depopulation of successive 1D subbands. The quantum conductance is substantially reduced with respect to the anticipated value for a spin- and valley-degenerate 1D system. This reduction is consistent with disorder-induced, intra-wire backscattering which suppresses the transmission of 1D modes. Calculations are presented to demonstrate the role of strain in the 1D states of this cleaved-edge structure.

cond-mat.mes-hall↗