arXiv subjects

Fabio Beltram

Publications and source records attributed to Fabio Beltram.

90 records · Page 5Linked to original sources

arXiv2004

Quasi-particle tunneling at a constriction in a fractional quantum Hall state

Split-gate constrictions can be used to produce controllable scattering in a fractional quantum Hall state and constitute a very versatile model system for the investigation of non-Fermi physics in edge states. Controllable inter-edge tunneling can be achieved by tuning the constriction parameters and its out-of-equilibrium behavior can be explored as well. Here we review our results of tunneling non-linearities at a split-gate constriction in a wide range of temperatures and inter-edge coupling. The results are compared to available theoretical predictions of tunneling characteristics between Luttinger liquids. We show how partial agreement with these theoretical models is obtained in selected ranges of temperatures and inter-edge coupling, while striking deviations are obtained especially in the low-coupling, low-temperature regimes.

cond-mat.mes-hall↗

arXiv2004

Surface-acoustic-wave driven planar light-emitting device

Electroluminescence emission controlled by means of surface acoustic waves (SAWs) in planar light-emitting diodes (pLEDs) is demonstrated. Interdigital transducers for SAW generation were integrated onto pLEDs fabricated following the scheme which we have recently developed. Current-voltage, light-voltage and photoluminescence characteristics are presented at cryogenic temperatures. We argue that this scheme represents a valuable building block for advanced optoelectronic architectures.

cond-mat.other↗

arXiv2004

Inter-edge strong-to-weak scattering evolution at a constriction in the fractional quantum Hall regime

Gate-voltage control of inter-edge tunneling at a split-gate constriction in the fractional quantum Hall regime is reported. Quantitative agreement with the behavior predicted for out-of-equilibrium quasiparticle transport between chiral Luttinger liquids is shown at low temperatures at specific values of the backscattering strength. When the latter is lowered by changing the gate voltage the zero-bias peak of the tunneling conductance evolves into a minimum and a non-linear quasihole-like characteristic emerges. Our analysis emphasizes the role of the local filling factor in the split-gate constriction region.

cond-mat.mes-hall↗

arXiv2003

Metastable phase in the quantum Hall ferromagnet

Time-dependent capacitance measurements reveal an unstable phase of electrons in gallium arsenide quantum well that occurs when two Landau levels with opposite spin are brought close to degeneracy by applying a gate voltage. This phase emerges below a critical temperature and displays a peculiar non-equilibrium dynamical evolution. The relaxation dynamics is found to follow a stretched exponential behavior and correlates with hysteresis loops observed by sweeping the magnetic field. These experiments indicate that metastable randomly-distributed magnetic domains are involved in the relaxation process in a way that is equivalently tunable by a change in gate voltage or temperature.

cond-mat.mes-hall↗

arXiv2002

Ferromagnetic resonant tunneling diodes as spin polarimeters and polarizers

A method for measuring the degree of spin polarization of magnetic materials based on spin-dependent resonant tunneling is proposed. The device we consider is a ballistic double-barrier resonant structure consisting of a ferromagnetic layer embedded between two insulating barriers. A simple procedure, based on a detailed analysis of the differential conductance, allows to accurately determine the polarization of the ferromagnet. The spin-filtering character of such a system is furthermore addressed. We show that a 100% spin selectivity can be achieved under appropriate conditions. This approach is believed to be well suited for the investigation of diluted magnetic semiconductor heterostructures.

cond-mat.mes-hall↗

arXiv2002

Evidence for non-linear quasiparticle tunneling between fractional quantum Hall edges

Remarkable nonlinearities in the differential tunneling conductance between fractional quantum Hall edge states at a constriction are observed in the weak-backscattering regime. In the $ν$ = 1/3 state a peak develops as temperature is increased and its width is determined by the fractional charge. In the range $2/3 \le ν\le 1/3$ this width displays a symmetric behavior around $ν$ = 1/2. We discuss the consistency of these results with available theoretical predictions for inter-edge quasiparticle tunneling in the weak-backscattering regime.

cond-mat.mes-hall↗

arXiv2002

High-performance planar light-emitting diode

Planar light-emitting diodes (LEDs) fabricated within a single high-mobility quantum well are demonstrated. Our approach leads to a dramatic reduction of radiative lifetime and junction area with respect to conventional vertical LEDs, promising very high-frequency device operation. Devices were fabricated by UV lithography and wet chemical etching starting from p-type modulation-doped AlGaAs/GaAs heterostructures grown by molecular beam epitaxy. Electrical and optical measurements from room temperature down to 1.8 K show high spectral purity and high external efficiency. Time-resolved measurements yielded extremely short recombination times of the order of 50 ps, demonstrating the relevance of the present scheme for high-frequency device applications in the GHz range.

cond-mat.mtrl-sci↗

arXiv2002

Josephson current in ballistic Nb/InAs/Nb highly transmissive junctions

Highly transmissive ballistic junctions are demonstrated between Nb and the two-dimensional electron gas formed at an InAs/AlSb heterojunction. A reproducible fabrication protocol is presented yielding high critical supercurrent values. Current-voltage characteristics were measured down to 0.4 K and the observed supercurrent behavior was analyzed within a ballistic model in the clean limit. This investigation allows us to demonstrate an intrinsic interface transmissivity approaching 90%. The reproducibility of the fabrication protocol makes it of interest for the experimental study of InAs-based superconductor-semiconductor hybrid devices.

cond-mat.supr-con↗

arXiv2001

de Gennes-Saint-James resonant transport in Nb/GaAs/AlGaAs heterostructures

Resonant transport is demonstrated in a hybrid superconductor-semiconductor heterostructure junction grown by molecular beam epitaxy on GaAs. This heterostructure realizes the model system introduced by de Gennes and Saint-James in 1963 [P. G. de Gennes and D. Saint-James, Phys. Lett. {\bf 4}, 151 (1963)]. At low temperatures a single marked resonance peak is shown superimposed to the characteristic Andreev-dominated subgap conductance. The observed magnetotransport properties are successfully analyzed within the random matrix theory of quantum transport, and ballistic effects are included by directly solving the Bogoliubov-de Gennes equations.

cond-mat.supr-con↗

arXiv2001

Green fluorescent proteins as optically-controllable elements in bioelectronics

A single-biomolecule optical toggle-switch is demonstrated based on a mutated green fluorescent protein (GFP). We have exploited molecular biology techniques to tailor GFP molecular structure and photophysical properties and give it optically-controlled bistability between two distinct states. We present optical control of the fluorescence dynamics with two laser beams at 476 and 350 nm down to the ultimate limit of single molecules. These results indicate that GFP-class fluorophores are promising candidates for the realization of biomolecular devices such as volumetric optical memories and optical switches.

cond-mat↗

arXiv2001

Interplay between disorder and intersubband collective excitations in the two-dimensional electron gas

Intersubband absorption in modulation-doped quantum wells is usually appropriately described as a collective excitation of the confined two-dimensional electron gas. At sufficiently low electron density and low temperatures, however, the in-plane disorder potential is able to damp the collective modes by mixing the intersubband charge-density excitation with single-particle localized modes. Here we show experimental evidence of this transition. The results are analyzed within the framework of the density functional theory and highlight the impact of the interplay between disorder and the collective response of the two-dimensional electron gas in semiconductor heterostructures.

cond-mat↗

arXiv2001

The coherent dynamics of photoexcited green fluorescent proteins

The coherent dynamics of vibronic wave packets in the green fluorescent protein is reported. At room temperature the non-stationary dynamics following impulsive photoexcitation displays an oscillating optical transmissivity pattern with components at 67 fs (497 cm-1) and 59 fs (593 cm-1). Our results are complemented by ab initio calculations of the vibrational spectrum of the chromophore. This analysis shows the interplay between the dynamics of the aminoacidic structure and the electronic excitation in the primary optical events of green fluorescent proteins.

physics.bio-ph↗

arXiv2001

Reflectionless tunneling in planar Nb/GaAs hybrid junctions

Reflectionless-tunneling was observed in Nb/GaAs superconductor/semiconductor junctions fabricated through a two-step procedure. First, periodic $δ$-doped layers were grown by molecular beam epitaxy near the GaAs surface, followed by an As cap layer to protect the surface during {\it ex-situ} transfer. Second, Nb was deposited by dc-magnetron sputtering onto the GaAs(001) 2 $\times$ 4 surface {\it in-situ} after thermal desorption of the cap layer. The magnetotransport behavior of the resulting hybrid junctions was successfully analyzed within the random matrix theory of phase-coherent Andreev transport. The impact of junction morphology on reflectionless tunneling and the applicability of the fabrication technique to the realization of complex superconductor/semiconductor mesoscopic systems are discussed.

cond-mat.supr-con↗

arXiv2000

1.26 $μ$m intersubband transitions in In$_{0.3}$Ga$_{0.7}$As/AlAs quantum wells

We observed room-temperature intersubband transitions at 1.26 microns in n-doped type-II In$_{0.3}$Ga$_{0.7}$As/AlAs strained quantum wells. An improved tight-binding model was used to optimize the structure parameters in order to obtain the shortest wavelength intersubband transition ever achieved in a semiconductor system. The corresponding transitions occur between the first confined electronic levels of the well following mid-infrared optical pumping of electrons from the barrier X-valley into the well ground state.

cond-mat.mtrl-sci↗

arXiv2000

Large transconductance oscillations in a single-well vertical Aharonov-Bohm interferometer

Aharonov-Bohm (AB) interference is reported for the first time in the conductance of a vertical nanostructure based on a single GaAs/AlGaAs quantum well (QW). The two lowest subbands of the well are spatially separated by the Hartree barrier originating from electronic repulsion in the modulation-doped QW and provide AB two-path geometry. Split-gates control the in-plane electronic momentum dispersion. In our system, we have clearly demonstrated AB interference in both electrostatic and magnetic modes. In the latter case the magnetic field was applied parallel to the QW plane, and perpendicular to the 0.02 um^2 AB loop. In the electrostatic mode of operation the single-QW scheme adopted led to large transconductance oscillations with relative amplitudes exceeding 30 %. The relevance of the present design strategy for the implementation of coherent nanoelectronic devices is underlined.

cond-mat.mes-hall↗

arXiv2000

Evidence of two-electron tunneling interference in Nb/InAs junctions

The impact of junction transparency in driving phase-coherent charge transfer across diffusive semiconductor-superconductor junctions is demonstrated. We present conductivity data for a set of Nb-InAs junctions differing only in interface transparency. Our experimental findings are analyzed within the quasi-classical Green-function approach and unambiguously show the physical processes giving rise to the observed excess zero-bias conductivity.

cond-mat.supr-con↗

arXiv2000

First-Order Phase Transition in a Quantum Hall Ferromagnet

The single-particle energy spectrum of a two-dimensional electron gas in a perpendicular magnetic field consists of equally-spaced spin-split Landau levels, whose degeneracy is proportional to the magnetic field strength. At integer and particular fractional ratios between the number of electrons and the degeneracy of a Landau level (filling factors n) quantum Hall effects occur, characterised by a vanishingly small longitudinal resistance and quantised Hall voltage. The quantum Hall regime offers unique possibilities for the study of cooperative phenomena in many-particle systems under well-controlled conditions. Among the fields that benefit from quantum-Hall studies is magnetism, which remains poorly understood in conventional material. Both isotropic and anisotropic ferromagnetic ground states have been predicted and few of them have been experimentally studied in quantum Hall samples with different geometries and filling factors. Here we present evidence of first-order phase transitions in n = 2 and 4 quantum Hall states confined to a wide gallium arsenide quantum well. The observed hysteretic behaviour and anomalous temperature dependence in the longitudinal resistivity indicate the occurrence of a transition between the two distinct ground states of an Ising quantum-Hall ferromagnet. Detailed many-body calculations allowed the identification of the microscopic origin of the anisotropy field.

cond-mat↗

arXiv1998

Andreev reflection in Si-engineered Al/InGaAs hybrid junctions

Andreev-reflection dominated transport is demonstrated in Al/n-In0.38Ga0.62As superconductor-semiconductor junctions grown by molecular beam epitaxy on GaAs(001). High junction transparency was achieved in low-doped devices by exploiting Si interface bilayers to suppress the native Schottky barrier. It is argued that this technique is ideally suited for the fabrication of ballistic transport hybrid microstructures.

cond-mat.supr-con↗