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G. Schmidt

Publications and source records attributed to G. Schmidt.

69 records · Page 4Linked to original sources

Molecular-beam epitaxy of (Zn,Mn)Se on Si(100)

We have investigated the growth by molecular-beam epitaxy of the II-VI diluted magnetic semiconductor (Zn,Mn)Se on As-passivated Si(100) substrates. The growth start has been optimized by using low-temperature epitaxy. Surface properties were assessed by Nomarski and scanning electron microscopy. Optical properties of (Zn,Mn)Se have been studied by photoluminescence and a giant Zeeman splitting of up to 30 meV has been observed. Our observations indicate a high crystalline quality of the epitaxial films.

cond-mat.mtrl-sci↗

1500-fold Tunneling Anisotropic Magnetoresistance in a (Ga,Mn)As stack

We report the discovery of a super-giant tunneling anisotropic magnetoresistance in an epitaxially grown (Ga,Mn)As/GaAs/(Ga,Mn)As structure. The effect arises from a strong dependence of the electronic structure of ferromagnetic semiconductors on the magnetization orientation rather than from a parallel or antiparallel alignment of the contacts. The key novel spintronics features of this effect are: (i) both normal and inverted spin-valve like signals; (ii) a large non-hysteretic magnetoresistance for magnetic fields perpendicular to the interfaces; (iii) magnetization orientations for extremal resistance are, in general, not aligned with the magnetic easy and hard axis. (iv) Enormous amplification of the effect at low bias and temperatures.

cond-mat.mes-hall↗

Tunneling Anisotropic Magnetoresistance: A spin-valve like tunnel magnetoresistance using a single magnetic layer

We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled ferromagnets. The effect is observed in a normal-metal/insulator/ferromagnetic-semiconductor tunneling device. This behavior is caused by the interplay of the anisotropic density of states in (Ga,Mn)As with respect to the magnetization direction, and the two-step magnetization reversal process in this material.

cond-mat.mes-hall↗

Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)As wires with nanoconstrictions

We have fabricated (Ga,Mn)As nanostructures in which domain walls can be pinned by sub-10 nm constrictions. Controlled by shape anisotropy, we can switch the regions on either side of the constriction to either parallel or antiparallel magnetization. All samples exhibit a positive magnetoresistance, consistent with domain-wall trapping. For metallic samples we find a magnetoresistance up to 8%, which can be understood from spin accumulation. In samples where, due to depletion at the constriction, a tunnel barrier is formed, we observe a magnetoresistance of up to 2000 %.

cond-mat.mes-hall↗

An Initial Survey of White Dwarfs in the Sloan Digital Sky Survey

An initial assessment is made of white dwarf and hot subdwarf stars observed in the Sloan Digital Sky Survey. In a small area of sky (190 square degrees), observed much like the full survey will be, 269 white dwarfs and 56 hot subdwarfs are identified spectroscopically where only 44 white dwarfs and 5 hot subdwarfs were known previously. Most are ordinary DA (hydrogen atmosphere) and DB (helium) types. In addition, in the full survey to date, a number of WDs have been found with uncommon spectral types. Among these are blue DQ stars displaying lines of atomic carbon; red DQ stars showing molecular bands of C_2 with a wide variety of strengths; DZ stars where Ca and occasionally Mg, Na, and/or Fe lines are detected; and magnetic WDs with a wide range of magnetic field strengths in DA, DB, DQ, and (probably) DZ spectral types. Photometry alone allows identification of stars hotter than 12000 K, and the density of these stars for 15<g<20 is found to be ~2.2 deg^{-2} at Galactic latitudes 29-62 deg. Spectra are obtained for roughly half of these hot stars. The spectra show that, for 15<g<17, 40% of hot stars are WDs and the fraction of WDs rises to ~90% at g=20. The remainder are hot sdB and sdO stars.

astro-ph↗

Voltage-Controlled Spin Selection in a Magnetic Resonant Tunnelling Diode

We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an external magnetic field the resulting spin splitting of the levels in the quantum well leads to a splitting of the transmission resonance into two separate peaks. This is interpreted as evidence of tunneling transport through spin polarized levels, and could be the first step towards a voltage controlled spin filter.

cond-mat.mes-hall↗

Detection of electrical spin injection by light-emitting diodes in top- and side-emission configuration

Detection of the degree of circular polarization of the electroluminescence of a light-emitting diode fitted with a spin injecting contact (a spin-LED) allows for a direct determination of the spin polarization of the injected carriers. Here, we compare the detection efficiency of (Al,Ga)As spin-LEDs fitted with a (Zn,Be,Mn)Se spin injector in top- and side-emission configuration. In contrast with top emission, we cannot detect the electrical spin injection in side emission from analysing the degree of circular polarization of the electroluminescence. To reduce resonant optical pumping of quantum-well excitons in the side emission, we have analysed structures with mesa sizes as small as 1 micron.

cond-mat.mtrl-sci↗

Temperature Dependent Magnetic Anisotropy in (Ga,Ma)As Layers

It is demonstrated by SQUID magnetization measurements that (Ga,Mn)As films can exhibit rich characteristics of magnetic anisotropy depending not only to the epitaxial strain but being strongly influenced by the hole and Mn concentration, and temperature. This behavior reflects the spin anisotropy of the valence subbands and corroborates predictions of the mean field Zener model of the carrier mediated ferromagnetism in III-V diluted magnetic semiconductors with Mn. At the same time the existence of in-plane uniaxial anisotropy with [110] the easy axis is evidenced. This is related to the top/bottom symmetry breaking, resulting in the lowering of point symmetry of (Ga,Mn)As to the C_{2v} symmetry group. The latter mechanism coexists with the hole-induced cubic anisotropy, but takes over close to T_C.

cond-mat.mtrl-sci↗

Chaotic Behavior of Positronium in a Magnetic Field

Classical motion of positronium embedded in a magnetic field is studied, and computation shows the emergence of chaotic orbits. Recent work investigating quantum behavior of this system predicts extremely long lifetimes. Chaos assisted tunneling, however may lead to significant shortening of the lifetime of this system.

physics.plasm-ph↗

Spin injection in the non-linear regime: band bending effects

Semiconductor spintronics will need to control spin injection phenomena in the non-linear regime. In order to study these effects we have performed spin injection measurements from a dilute magnetic semiconductor [(Zn,Be,Mn)Se] into nonmagnetic (Zn,Be)Se at elevated bias. When the applied voltage is increased to a few mV we find a strong decrease of the spin injection efficiency. The observed behavior is modelled by extending the charge-imbalance model for spin injection to include band bending and charge accumulation at the interface of the two compounds. We find that the observed effects can be attributed to repopulation of the minority spin level in the magnetic semiconductor.

cond-mat.mes-hall↗

Measuring the Boundary Layer and Inner Accretion Disk Temperatures for WX Ceti During Superoutburst

We obtained EUV photometry, optical spectroscopy, and multi-color optical photometry for WX Cet during its 1998 November superoutburst. WX Cet is only the second short-period, low mass transfer CV (TOAD) to ever be observed in the EUV. Our determined superhump period is consistent with that found by Kato et al. (0.059 d) and we confirm that superhumps are grey in the optical. The optical spectra provide direct evidence that the line emission region is optically thick and our multi-wavelength photometric measurements are used to determine the inner accretion disk and boundary layer temperatures during superoutburst. Using a determined distance to WX Cet of ~130 pc, we find T$_{ID}$= 21,000K and T_{BL}~72,500K. Both values are in good agreement with that expected by models of the superoutburst continuum being produced by the inner disk and boundary layer.

astro-ph↗

Optical/Infrared spectroscopy and photometry of the short period binary RX J1914+24

We present observations of the proposed double degenerate polar RX J1914+24. Our optical and infrared spectra show no emission lines. This, coupled with the lack of significant levels of polarisation provide difficulties for a double degenerate polar interpretation. Although we still regard the double degenerate polar model as feasible, we have explored alternative scenarios for RX~J1914+24. These include a double degenerate algol system, a neutron star-white dwarf pair and an electrically powered system. The latter model is particularly attractive since it naturally accounts for the lack of both emission lines and detectable polarisation in RX J1914+24. The observed X-ray luminosity is consistent with the predicted power output. If true, then RX J1914+24 would be the first known stellar binary system radiating largely by electrical energy.

astro-ph↗

Large magnetoresistance effect due to spin-injection into a non-magnetic semiconductor

A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a non-magnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the non-magnetic semiconductor and can theoretically yield a positive magnetoresistance of 100%, when the spin flip length in the non-magnetic semiconductor is sufficiently large. Experimentally, our devices exhibit up to 25% magnetoresistance.

cond-mat.mes-hall↗

Epitaxy and Magneto-transport properties of the diluted magnetic semiconductor p- Be(1-x)MnxTe

We report on the MBE-growth and magnetotransport properties of p-type BeMnTe, a new ferromagnetic diluted magnetic semiconductor. BeMnTe thin film structures can be grown almost lattice matched to GaAs for Mn concentrations up to 10% using solid source MBE. A high p-type doping with nitrogen can be achieved by using an RF-plasma source. BeMnTe and BeTe layers have been characterized by magneto-transport measurements. At low temperatures, the BeMnTe samples exhibit a large anomalous Hall effect. A hysteresis in the anomalous Hall effect appears below 2.5K in the most heavily doped sample, which indicates the occurrence of a ferromagnetic phase.

cond-mat.mtrl-sci↗

Basic obstacle for electrical spin-injection from a ferromagnetic metal into a diffusive semiconductor

We have calculated the spin-polarization effects of a current in a two dimensional electron gas which is contacted by two ferromagnetic metals. In the purely diffusive regime, the current may indeed be spin-polarized. However, for a typical device geometry the degree of spin-polarization of the current is limited to less than 0.1%, only. The change in device resistance for parallel and antiparallel magnetization of the contacts is up to quadratically smaller, and will thus be difficult to detect.

cond-mat.mes-hall↗